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United States Patent

US Patent 7012274: Modulation doped thyristor and complementary…

US 7012274  ·  granted 2006-03-14

Patent Number 7012274
Title Modulation doped thyristor and complementary transistors combination for a monolithic optoelectronic integrated circuit
Filed 2002-03-04
Granted 2006-03-14
Inventor(s) Geoff W. Taylor
Assignee University of Connecticut
CPC Classification G02B6/00, G02B6/24, G02B6/26
Number of Claims 1

Claims Summary

1. A semiconductor device, comprising:
a series of epitaxial layers grown on a substrate, said epitaxial layers including an N+ doped layer, a first plurality of layers forming a p-type modulation doped quantum well spaced from said N+ doped layer by at least a first epitaxial layer, a second plurality of layers forming an n-type modulation doped quantum well, said first plurality of layers being separated from said second plurality of layers by at least a second epitaxial layer, and a P+ doped layer spaced from said second plurality of layers by at least a third epitaxial layer.

Inventors

Assignee

University of Connecticut