United States Patent
US Patent 6849866: High performance optoelectronic and electronic…
US 6849866 · granted 2005-02-01
| Patent Number | 6849866 |
|---|---|
| Title | High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration |
| Filed | 2002-07-23 |
| Granted | 2005-02-01 |
| Inventor(s) | Geoff W. Taylor |
| Assignee | University of Connecticut |
| CPC Classification | H01S5/183, H01S5/00, H01S5/10 |
| Number of Claims | 5 |
Claims Summary
1. A semiconductor device, comprising: a substrate, and a series of epitaxial layers grown on the substrate, said epitaxial layers including a modulation doped quantum well structure, at least one p-type doped layer between said substrate and said modulation doped quantum well structure, and a first undoped spacer layer and at least one p-type doped layer above the modulation doped quantum well structure.