United States Patent
US Patent 6841795: Semiconductor devices employing at least one…
US 6841795 · granted 2005-01-11
| Patent Number | 6841795 |
|---|---|
| Title | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
| Filed | 2003-01-13 |
| Granted | 2005-01-11 |
| Inventor(s) | Geoff W. Taylor, Scott W. Duncan |
| Assignee | University of Connecticut |
| CPC Classification | H10D10/01, H01S5/00, H01S5/10 |
| Number of Claims | 1 |
Claims Summary
1. A semiconductor device comprising:
a series of layers formed on a substrate, said layers including a first plurality of layers comprising n-type dopant material, a second plurality of layers forming a p-type modulation doped quantum well structure, and a third plurality of layers including at least one layer comprising n-type dopant material, wherein said first plurality of layers includes an n-type ohmic contact layer and a first etch stop layer disposed above said n-type contact layer, wherein portions of said first etch stop layer are removed for contacting said n-type ohmic contact layer.