United States Patent
US Patent 4322379: Fabrication process for semiconductor bodies
US 4322379 · granted 1982-03-30
Abstract
A system and method is provided for forming semiconductor tear-drop shaped bodies having minimal grain boundaries. Semiconductor material is melted in a capillary tube at the top of a tower, and forced under gas pressure through a nozzle. Separate semiconductor bodies are formed. They are passed through a free fall path over which a predetermined temperature gradient controls solidification of the bodies. The resultant bodies are tear-drop semiconductor bodies of near uniform size with minimal grain boundaries.
| Patent Number | 4322379 |
|---|---|
| Title | Fabrication process for semiconductor bodies |
| Filed | 1979-04-02 |
| Granted | 1982-03-30 |
| Inventor(s) | Kilby; Jack S., McKee; William R., Porter; Wilbur A. |
| Assignee | Texas Instruments Incorporated |
| Number of Claims | 80 |
Abstract
A system and method is provided for forming semiconductor tear-drop shaped bodies having minimal grain boundaries. Semiconductor material is melted in a capillary tube at the top of a tower, and forced under gas pressure through a nozzle. Separate semiconductor bodies are formed. They are passed through a free fall path over which a predetermined temperature gradient controls solidification of the bodies. The resultant bodies are tear-drop semiconductor bodies of near uniform size with minimal grain boundaries.
Claim 1
A method of forming tear-shaped semiconductor bodies of substantially uniform size with reduced grain boundaries therein, comprising: (a) introducing solid particles of semiconductor material into a capillary tube at the upper end of an elongated first chamber; (b) flowing inert gas into said first chamber to purge air therefrom and create an inert atmosphere therein; (c) heating said capillary tube to melt said semiconductor material; (d) forcing said molten semiconductor material through a nozzle in said capillary tube to form said melt into droplets at the upper end of said first chamber; (e) allowing said droplets to free fall through said inert gas atmosphere to cool to solidification as tear-shaped bodies; (f) collecting and introducing said tear-shaped bodies into a feed tube at the upper end of an elongated second chamber; (g) flowing inert gas into said second chamber to purge air therefrom and create an inert atmosphere therein; (h) heating an upper portion of said second chamber and said inert gas therein to form an upper zone having a temperature sufficient to melt said tear-shaped bodies passing therethrough; (i) establishing in a lower zone of said second chamber a te
Claims
80 totalA method of forming tear-shaped semiconductor bodies of substantially uniform size with reduced grain boundaries therein, comprising: (a) introducing solid particles of semiconductor material into a capillary tube at the upper end of an elongated first chamber; (b) flowing inert gas into said first chamber to purge air therefrom and create an inert atmosphere therein; (c) heating said capillary tube to melt said semiconductor material; (d) forcing said molten semiconductor material through a nozzle in said capillary tube to form said melt into droplets at the upper end of said first chamber; (e) allowing said droplets to free fall through said inert gas atmosphere to cool to solidification as tear-shaped bodies; (f) collecting and introducing said tear-shaped bodies into a feed tube at the upper end of an elongated second chamber; (g) flowing inert gas into said second chamber to purge air therefrom and create an inert atmosphere therein; (h) heating an upper portion of said second chamber and said inert gas therein to form an upper zone having a temperature sufficient to melt said tear-shaped bodies passing therethrough; (i) establishing in a lower zone of said second chamber a te