United States Patent
US Patent 6974969: P-type quantum-well-base bipolar transistor…
US 6974969 · granted 2005-12-13
| Patent Number | 6974969 |
|---|---|
| Title | P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer |
| Filed | 2003-11-03 |
| Granted | 2005-12-13 |
| Inventor(s) | Geoff W. Taylor |
| Assignee | University of Connecticut |
| CPC Classification | H10D10/01, H10D10/80, H10D10/021 |
| Number of Claims | 2 |
Claims Summary
1. A transistor device comprising:
a series of layers formed on a substrate, said layers including a first set of one or more layers each comprising n-type dopant material, a second set of layers forming a p-type modulation doped quantum well structure, and a third set of one or more layers each comprising n-type dopant material, wherein said first set of layers includes an n-type ohmic contact layer;