United States Patent
US Patent 7173293: Semiconductor devices employing at least one…
US 7173293 · granted 2007-02-06
| Patent Number | 7173293 |
|---|---|
| Title | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
| Filed | 2005-01-10 |
| Granted | 2007-02-06 |
| Inventor(s) | Geoff W. Taylor, Scott W. Duncan |
| Assignee | University of Connecticut |
| CPC Classification | H10D10/01, H01S5/00, H01S5/10 |
| Number of Claims | 1 |
Claims Summary
1. A transistor device comprising:
a series of layers formed on a substrate, said layers including a first plurality of layers comprising n-type dopant material, a second plurality of layers formed above said first plurality of layers and including a p-type modulation doped quantum well structure that defines a channel region, and a third plurality of layers formed above said second plurality of layers and comprising n-type dopant material, wherein said first plurality of layers includes an n-type ohmic contact layer;