| Patent Number |
Title Of Patent |
Date Issued |
| RE33671 |
Method of making high mobility multilayered heterojunction device employing modulated doping |
August 20, 1991 |
| The mobility of a relatively narrow bandgap semiconductor material can be significantly enhanced by incorporating it into a multilayered structure (10) comprising a first plurality of relatively narrow bandgap layers (12) of the material and a second plurality of wider bandgap semiconduc |
| 5363394 |
Quantum wire laser |
November 8, 1994 |
| Intersecting quantum wells form a T-shaped structure. Quantum bound states exist due to the spreading out of the wave function in the T-junction region. The confined state leads to formation of a quantum wire in which one-dimensional carrier behavior extends along a wire-like region defi |
| 5311045 |
Field effect devices with ultra-short gates |
May 10, 1994 |
| The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure is grown vertically on a substrate by thin film deposition s |
| 5219772 |
Method for making field effect devices with ultra-short gates |
June 15, 1993 |
| The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure is grown vertically on a substrate by thin film deposition s |
| 5051791 |
Apparatus comprising refractive means for elections |
September 24, 1991 |
| The disclosed novel solid state electronic devices comprise a two-dimensional electron gas (2DEG), emission means of ballistic 2DEG electrons, collection means of 2DEG electrons, and control means disposed between the emissions means and the collection means such that ballistic 2DEG |
| 4349796 |
Devices incorporating phonon filters |
September 14, 1982 |
| An acoustic superlattice of alternating layers of different acoustic impedance is disclosed as a filter for high frequency phonons. Applications discussed include spectrometers, acoustic imaging apparatus, and cavity resonators. |
| 4194935 |
Method of making high mobility multilayered heterojunction devices employing modulated doping |
March 25, 1980 |
| The mobility of a relatively narrow bandgap semiconductor material can be significantly enhanced by incorporating it into a multilayered structure (10) comprising a first plurality of relatively narrow bandgap layers (12) of the material and a second plurality of wider bandgap semiconduc |
| 4163237 |
High mobility multilayered heterojunction devices employing modulated doping |
July 31, 1979 |
| The mobility of a relatively narrow bandgap semiconductor material can be significantly enhanced by incorporating it into a multilayered structure (10) comprising a first plurality of relatively narrow bandgap layers (12) of the material and a second plurality of wider bandgap semiconduc |
