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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:












Patent Number Title Of Patent Date Issued
RE43471 Method of manufacturing a semiconductor device June 12, 2012
In a patterning process of a semiconductor device having inverted stagger type TFTs, a normal photolithography step using diazo naphthoquinone (DNQ)-Novolac resin based positive photo resist is applied, and a problem of the area dependency of the photo resist pattern side wall taper angl
RE43450 Method for fabricating semiconductor thin film June 5, 2012
An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amo
RE43401 Semiconductor device May 22, 2012
A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot
RE42241 Method of fabricating a semiconductor device March 22, 2011
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used.
RE42139 Method of fabricating a semiconductor device February 15, 2011
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used.
RE42097 Method of fabricating a semiconductor device February 1, 2011
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used.
RE41690 Laser processing method September 14, 2010
Method of processing, e.g., laser annealing, objects such as semiconductor devices with pulsed lasers with high production yield and high reproducibility so as to obtain good characteristics stably. The pulse width of the irradiated pulse beam is set to more than 30 nsec to stabilize
RE41215 Semiconductor device April 13, 2010
A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot
RE39393 Device for reading an image having a common semiconductor layer November 14, 2006
A device for reading an image (an image reading device) according to this invention comprises therein at least one photoelectric conversion semiconductor device provided on a substrate and at least one thin film transistor circuit element provided on the substrate wherein said photoe
RE38727 Photoelectric conversion device and method of making the same April 19, 2005
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such
RE37993 Laser processing method February 18, 2003
Method of processing, e.g., laser annealing, objects such as semiconductor devices with pulsed lasers with high production yield and high reproducibility so as to obtain good characteristics stably. The pulse width of the irradiated pulse beam is set to more than 30 nsec to stabilize
RE37441 Photoelectric conversion device November 13, 2001
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such
RE36314 Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film o September 28, 1999
An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain re
RE34658 Semiconductor device of non-single crystal-structure July 12, 1994
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region form
RE33947 Laser scribing method June 2, 1992
A laser scribing system and method is described. In the system, a film formed on a substrate is irradiated with laser beam which is focused on a limited portion of the film in order to remove the portion and produce a groove. Laser beam used for eliminating the portion of film formed on
RE33208 Photoelectric conversion panel and assembly thereof May 1, 1990
A photoelectric conversion panel which includes a PIN type non-single-crystal semiconductor laminated photoelectric conversion member formed on a substrate, the substrate is formed by a thin, flexible, chemically reinforced glass sheet.A plurality of such photoelectric conversion panels
D645029 Antenna September 13, 2011
D605642 Contactless data carrier December 8, 2009
D605584 Photoelectric conversion element December 8, 2009
D604693 Photoelectric conversion element November 24, 2009
D602922 Contactless data carrier October 27, 2009
D602010 Antenna October 13, 2009
8588683 Electronic circuit, semiconductor device, and electronic device November 19, 2013
The electronic circuit includes a first comparator and a second comparator in which an induced electromotive force of a coil are compared with each of a first reference potential and a second reference potential and which output a pulse signal in accordance with conditions; the first
8588000 Semiconductor memory device having a reading transistor with a back-gate electrode November 19, 2013
A semiconductor device with a reduced area and capable of higher integration and larger storage capacity is provided. A multi-valued memory cell including a reading transistor which includes a back gate electrode and a writing transistor is used. Data is written by turning on the wri
8587999 Semiconductor device November 19, 2013
An object is to provide a semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of times of writing operations. A semiconductor device includes a source-bit line, a first signal line,
8587500 Semiconductor device, display device, and electronic device November 19, 2013
A display device includes a load, a transistor for controlling a current value supplied to the load, a capacitor, a first wiring, a second wiring, and first to fourth switches. Variations in the current value caused by variations in the threshold voltage of the transistor can be suppress
8587479 Position information detection system and position information detection method November 19, 2013
An object of the present invention is to achieve a position information detection system with high precision when an obstruction and a reflective object exist. A position information detection system includes a reader/writer whose position is known, a first RF chip whose position is
8587342 Semiconductor integrated circuit November 19, 2013
A novel logic circuit in which data is held even after power is turned off is provided. Further, a novel logic circuit whose power consumption can be reduced is provided. In the logic circuit, a comparator comparing two output nodes, a charge holding portion, and an output-node-potential
8586991 Semiconductor device November 19, 2013
Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor (105), a charge equivalent to a threshold value of a TFT (104) is stored. When a signal is inputted thereto, the thresh
8586988 Semiconductor device and manufacturing method thereof November 19, 2013
[Summary] [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. [Solving Means] By performing the formation of the pixel electrode 127, the source region 123 and the drain region 1
8586985 Display device November 19, 2013
The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode
8586905 Semiconductor device and driving method thereof November 19, 2013
A semiconductor device including photosensor capable of imaging with high resolution is disclosed. The semiconductor device includes the photosensor having a photodiode, a first transistor, and a second transistor. The photodiode generates an electric signal in accordance with the in
8586197 Composite material, light emitting element, light emitting device and electronic appliance using November 19, 2013
A composite material includes an organic compound represented by the following general formula (1) and an inorganic compound, where, in the general formula (1), R.sup.1 to R.sup.24 is identical to or different from one another, and represent any of hydrogen, an alkyl group, an alkoxy
8585775 Assist device November 19, 2013
The present invention provides a higher-performance assist device which is safer by using a wireless charging technique. The assist device includes a detecting portion and an assist device driving portion. The detecting portion includes a sensor, a first transmitting/receiving circui
8582716 Driver circuit, display device including the driver circuit, and electronic appliance including November 12, 2013
An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a f
8582349 Semiconductor device November 12, 2013
An object is to provide a semiconductor device which includes a memory cell capable of holding accurate data even when the data is multilevel data. The semiconductor device includes a memory cell holding data in a node to which one of a source and a drain of a transistor whose channel
8582348 Semiconductor device and method for driving semiconductor device November 12, 2013
It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. A semiconductor device includes a plurality of memory cells each including a
8582058 Lighting system including wiring over electrode November 12, 2013
It is an object of the present invention to provide a lighting system having favorable luminance uniformity in a light-emitting region when the lighting system has large area. According to one feature of the invention, a lighting system comprises a first electrode, a second electrode
8581818 Liquid crystal display device and method for driving the same November 12, 2013
To increase the frequency of input of image signals, a pixel portion of a liquid crystal display device is divided into a plurality of regions, and input of image signals is controlled in each of the plurality of regions. As a result, a plurality of scan lines can be selected at the same
8581805 Display device and driving method thereof November 12, 2013
A display device having a pixel configuration in which the aperture ratio is not decreased, and a driving method of a display device in which the duty ratio and the reliability of a light emitting element are increased. According to the invention, a signal line for inputting an analog si
8581631 Sense amplifier and electronic apparatus using the same November 12, 2013
A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-s
8581625 Programmable logic device November 12, 2013
An object is to provide a programmable logic device having logic blocks connected to each other by a programmable switch, where the programmable switch is characterized by an oxide semiconductor transistor incorporated therein. The extremely low off-state current of the oxide semiconduct
8581491 Method of manufacturing display device November 12, 2013
To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a display device having an optical film that is formed using a plastic substrate. The method of manufacturing a display device
8581413 Semiconductor device and method for manufacturing the same November 12, 2013
A method for easily manufacturing a semiconductor device in which variation in thickness or disconnection of a source electrode or a drain electrode is prevented is proposed. A semiconductor device includes a semiconductor layer formed over an insulating substrate; a first insulating
8581332 Semiconductor device and manufacturing method thereof November 12, 2013
The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structura
8581309 Semiconductor device November 12, 2013
An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor devi
8581266 Light-emitting element, light-emitting device, lighting device, and electronic device November 12, 2013
An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a cathode, n (n is a
8581265 Light-emitting device and electronic device including substrate having flexibility November 12, 2013
It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having
8581260 Semiconductor device including a memory November 12, 2013
Plural kinds of thin film transistors having different film thicknesses of semiconductor layers are provided over a substrate having an insulating surface. A channel formation region of semiconductor layer in a thin film transistor for which high speed operation is required is made t
8581170 Semiconductor device having a photodiode electrically connected to a back gate of a transistor a November 12, 2013
A transistor a gate of which, one of a source and a drain of which, and the other are electrically connected to a selection signal line, an output signal line, and a reference signal line, respectively and a photodiode one of an anode and a cathode of which and the other are electric

 
 
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