| Patent Number |
Title Of Patent |
Date Issued |
| RE39393 |
Device for reading an image having a common semiconductor layer |
November 14, 2006 |
| A device for reading an image (an image reading device) according to this invention comprises therein at least one photoelectric conversion semiconductor device provided on a substrate and at least one thin film transistor circuit element provided on the substrate wherein said photoe |
| RE38727 |
Photoelectric conversion device and method of making the same |
April 19, 2005 |
| A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such |
| RE37993 |
Laser processing method |
February 18, 2003 |
| Method of processing, e.g., laser annealing, objects such as semiconductor devices with pulsed lasers with high production yield and high reproducibility so as to obtain good characteristics stably. The pulse width of the irradiated pulse beam is set to more than 30 nsec to stabilize |
| RE37441 |
Photoelectric conversion device |
November 13, 2001 |
| A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such |
| RE36314 |
Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film o |
September 28, 1999 |
| An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain re |
| RE34658 |
Semiconductor device of non-single crystal-structure |
July 12, 1994 |
| A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region form |
| RE33947 |
Laser scribing method |
June 2, 1992 |
| A laser scribing system and method is described. In the system, a film formed on a substrate is irradiated with laser beam which is focused on a limited portion of the film in order to remove the portion and produce a groove. Laser beam used for eliminating the portion of film formed on |
| RE33208 |
Photoelectric conversion panel and assembly thereof |
May 1, 1990 |
| A photoelectric conversion panel which includes a PIN type non-single-crystal semiconductor laminated photoelectric conversion member formed on a substrate, the substrate is formed by a thin, flexible, chemically reinforced glass sheet.A plurality of such photoelectric conversion panels |
| D602922 |
Contactless data carrier |
October 27, 2009 |
|
| D602010 |
Antenna |
October 13, 2009 |
|
| 7619282 |
Hybrid circuit and electronic device using same |
November 17, 2009 |
| There is disclosed a hybrid circuit in which a circuit formed of TFTs in integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz substrate. The TFTs are |
| 7619253 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
November 17, 2009 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). |
| 7618904 |
Method of manufacturing a semiconductor device |
November 17, 2009 |
| When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film contracts, so that a warp in the film occurs. Therefore, the quality of a resulting crystalline |
| 7618882 |
Method for manufacturing semiconductor device and laser irradiation apparatus |
November 17, 2009 |
| It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the s |
| 7616282 |
Liquid crystal display and method of driving same |
November 10, 2009 |
| There is disclosed a lightweight and small liquid crystal display which achieves low power consumption and in which the optical anisotropy of the liquid crystal material is compensated for in order to enhance the viewing angle characteristics and the response speed of the liquid crys |
| 7616273 |
Contact structure |
November 10, 2009 |
| There is disclosed a contact structure for electrically connecting conducting lines formed on a first substrate of an electrooptical device such as a liquid crystal display with conducting lines formed on a second substrate via conducting spacers while assuring a uniform cell gap among |
| 7616182 |
Display device and driving method thereof |
November 10, 2009 |
| A low-power-consumption active matrix display device is provided.A driving method of an active matrix display device having M gate lines and N source lines, comprises the steps of writing a data signal of an (m-1)-th row (2.ltoreq.m.ltoreq.M, m is a natural number) to the source line, |
| 7616173 |
Electronic device and method of driving the same |
November 10, 2009 |
| An electro-optical device with a pixel portion of enhanced definition is provided, which uses pixels having a novel structure so that the number of stages of a source signal line side driver circuit is reduced to half the number of pixels in the horizontal direction, thereby making a spa |
| 7615825 |
Semiconductor device having tapered gate insulating film |
November 10, 2009 |
| TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the cost of production |
| 7615824 |
D/A converter circuit, semiconductor device incorporating the D/A converter circuit, and manufac |
November 10, 2009 |
| D/A conversion having higher accuracy is provided by improving relative accuracy of the resistance value of resistors which configure a resistor string. A manufacturing method of a D/A converter circuit of the invention comprises the steps of: forming a resistor string 11 which inclu |
| 7615786 |
Thin film transistor incorporating an integrated capacitor and pixel region |
November 10, 2009 |
| A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trappin |
| 7615785 |
Light emitting device |
November 10, 2009 |
| The invention provides a light emitting device which is capable of displaying on both sides, has a small volume, and is capable of being used as a module. A light emitting element represented by an EL element and the like is used in a pixel portion, and two pixel portions are provide |
| 7615495 |
Display device and manufacturing method of the same |
November 10, 2009 |
| A plurality of wires and electrodes are formed by forming a first conductive film, selectively forming a resist over the first conductive film, forming a second conductive film over the first conductive film and the resist, removing the second conductive film formed over the resist by |
| 7615488 |
Method for forming pattern, thin film transistor, display device and method for manufacturing th |
November 10, 2009 |
| A method for forming a pattern according to the invention comprises the steps of: forming a mask over a substrate having light-transmitting properties; forming a first region having a substance including a light-absorbing material over the substrate and the mask; forming a second reg |
| 7615473 |
Method of introducing ion and method of manufacturing semiconductor device |
November 10, 2009 |
| When an ion is introduced into a semiconductor on which a resist is formed, the ion and the resist react with each other to generate a gas (dissociated gas) and a component of the thus-generated dissociated gas is introduced into the semiconductor, which becomes a factor to deteriora |
| 7615424 |
Laser irradiation apparatus and method for manufacturing semiconductor device using the laser ir |
November 10, 2009 |
| An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation method. Another object of the present invention is to provide a method for manufacturing |
| 7615423 |
Method for producing insulated gate thin film semiconductor device |
November 10, 2009 |
| An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 .mu.m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystall |
| 7615422 |
Evaluation method of semiconductor device, manufacturing method of the semiconductor device, des |
November 10, 2009 |
| There is provided a new method of obtaining the dopant activation rate of a device accurately and simply in a different way from a method of obtaining a carrier density with use of a Hall measurement or CV measurement, and also provided a production method of a device performed with |
| 7615384 |
Semiconductor display device and method of manufacturing the same |
November 10, 2009 |
| A method of manufacturing a semiconductor device with the use of a laser crystallization method is provided which can prevent grain boundaries from being formed in a channel forming region of a TFT and which can avoid substantial reduction in TFT mobility, reduction in on current, and |
| 7613030 |
Semiconductor memory device and method for operating the same |
November 3, 2009 |
| A semiconductor memory device is provided, which comprises an analog switch, a first inverter, a second inverter, and a clocked inverter. A first terminal of the analog switch is electrically connected to a first data line. A second terminal of the analog switch is electrically conne |
| 7612849 |
Liquid crystal display device |
November 3, 2009 |
| An object of the present invention is to provide a transflective liquid crystal display device having an excellent visibility obtained by optimizing the arrangement of a color filter, which would become a problem in the process of fabricating transparent and reflective liquid crystal |
| 7612598 |
Clock signal generation circuit and semiconductor device |
November 3, 2009 |
| In a semiconductor device capable of radio communication, a stable clock signal is generated even if a reference clock signal for generating a clock signal has varied frequencies in each cycle. A clock signal generation circuit includes an edge detection circuit that detects an edge |
| 7612376 |
Semiconductor device |
November 3, 2009 |
| A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such characteristics as to be able to operate in a wide driving frequency range of 0.05 to 2 GHz, and |
| 7611930 |
Method of manufacturing display device |
November 3, 2009 |
| In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the st |
| 7610794 |
Particle detection sensor, method for manufacturing particle detection sensor, and method for de |
November 3, 2009 |
| A compact sensor with which particles floating in the air can be easily detected. A sensor having a microstructure which detects a detection object by contact is used. A microstructure has an opening to be a detection hole corresponding to the size of a detection object, and a pair o |
| 7609358 |
Liquid crystal display device and manufacturing method thereof |
October 27, 2009 |
| As the screen size becomes larger, it is required to make the device achieve higher definition, higher open area ratio, and higher reliability. Further, requirements for improvements in productivity and cost minimization are also increased. In the present invention, a substrate is pa |
| 7609310 |
Display device having an image pickup function and a two-way communication system |
October 27, 2009 |
| A two-way communication device having a display device of novel structure and an image pickup device is provided. More particularly, a two-way communication system having a display device and an image pickup device is provided. The display device having an image pickup function includes |
| 7609236 |
Display device and method of driving the same |
October 27, 2009 |
| A display is conducted by using a time gray-scale system, in which one frame period is divided into a plurality of sub-frame periods, and a voltage applied to an EL element of a pixel is varied on a sub-frame period basis. Because of this, a display device is provided in which the fl |
| 7608892 |
Semiconductor device and manufacturing method of the same |
October 27, 2009 |
| To reduce the adverse affect that characteristics of end portions of a channel forming region of a semiconductor film have on characteristics of a transistor. A gate electrode is formed over a channel forming region of a semiconductor film over a substrate, with a gate insulating film |
| 7608527 |
Laser irradiation method and method for manufacturing crystalline semiconductor film |
October 27, 2009 |
| Even when the laser irradiation is performed under the same condition with the energy distribution of the beam spot shaped as appropriate, the energy given to the irradiated surface is not yet homogeneous. When a semiconductor film is crystallized to form a crystalline semiconductor |
| 7608492 |
Method for manufacturing semiconductor device and heat treatment method |
October 27, 2009 |
| It is an object of the present invention to apply a technique for removing the adverse effect of a substrate shrinkage due to a heat treatment, and further forming a fine and high-quality insulating film, and a semiconductor device that can realize high-performance and high-reliabili |
| 7608490 |
Semiconductor device and manufacturing method thereof |
October 27, 2009 |
| To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combin |
| 7605902 |
Semiconductor device and method of fabricating the same |
October 20, 2009 |
| There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of f |
| 7605761 |
Antenna and semiconductor device having the same |
October 20, 2009 |
| An antenna capable of receiving circularly polarized waves and performing impedance matching between the antenna and an IC (integrated circuit) of a semiconductor device, and a semiconductor device having such an antenna. The antenna has a first conductor pattern with a loop configur |
| 7605534 |
Light-emitting element having metal oxide and light-emitting device using the same |
October 20, 2009 |
| It is an object of the invention is to provide a light-emitting element in which failure of the light-emitting element due to separation can be controlled and stable luminescence can be obtained with high-efficiency and for a long stretch of time by controlling separation of layers c |
| 7605410 |
Semiconductor device and manufacturing method thereof |
October 20, 2009 |
| The invention provides a novel memory for which process technology is relatively simple and which can store multivalued information by a small number of elements. A part of a shape of the first electrode in the first storage element is made different from a shape of the first electrode i |
| 7605056 |
Method of manufacturing a semiconductor device including separation by physical force |
October 20, 2009 |
| The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening |
| 7605029 |
Method of manufacturing semiconductor device |
October 20, 2009 |
| According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H.sub.2, O, O.sub.2, and P are added, are formed in a semiconductor film having a crystal |
| 7605023 |
Manufacturing method for a semiconductor device and heat treatment method therefor |
October 20, 2009 |
| To apply a technique of forming a dense insulating film with a high quality in a thin film element such as a TFT formed on a glass substrate by eliminating an influence of contraction of the substrate caused by heat treatment in a manufacturing process for the element, and a semicond |
| 7602385 |
Display device and display system using the same |
October 13, 2009 |
| A display device enables a reduction in the amount of operation processing of a GPU and power consumption at the time of image refresh, and a display system uses the display device. The display device is constituted by pixels each including storage circuits, an operation processing c |
