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Read only memory with optimized dimension for improved performance and chip area utilization |
| T977006 |
Read only memory with optimized dimension for improved performance and chip area utilization
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| Patent Drawings: | |
| Inventor: |
Balasubramanian, et al. |
| Date Issued: |
December 5, 1978 |
| Application: |
05/899,615 |
| Filed: |
April 24, 1978 |
| Inventors: |
Balasubramanian; Peruvemba S. (Manassas, VA)
Grazier; Edwin C. (Manassas, VA)
Henke; John D. (Manassas, VA)
Latham; Robert P. (Manassas, VA)
Myers; Martin J. (Manassas, VA)
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| Assignee: |
International Business Machines Corporation (Armonk, NY) |
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| U.S. Class: |
257/391; 257/E27.07; 257/E27.102; 365/104; 365/150 |
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| Abstract: |
a read only memory on a semiconductor substrate having metal word lines and diffused bit lines with optimized dimensions for a selected performance and storage capacity with the metal lines being along an X dimension and the diffused lines being orthogonally related to the metal lines along a Y dimension. The X dimension for the substrate is given by the relation X = 2.sup.N .multidot. WL .multidot. K1 where 2.sup.N is an integer definitive of the number of words on a metal line where N is any integer power greater than zero; WL is word length which equals the number of storage devices per word selected for a word and K1 is a constant definitive of the average spacing in mils between the storage devices along the first length, and the Y dimension being given by a second relation Y = K2 .multidot. QN where K2 is a constant definitive of the spacing in mils between the adjacent rows of storage devices along the second length and Q is the number of said words. Changing the aspect ratio for an array permits the performance of a read only memory to be changed to a different set of X and Y dimensions. |
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