| |
 |
Monolithically integrated semiconductor structure containing at least two devices in a common zone and technique for preventing parasitic transistor action |
| T969010 |
Monolithically integrated semiconductor structure containing at least two devices in a common zone and technique for preventing parasitic transistor action
|
|
| Patent Drawings: | |
| Inventor: |
Berger, et al. |
| Date Issued: |
April 4, 1978 |
| Application: |
05/801,433 |
| Filed: |
May 20, 1977 |
| Inventors: |
Berger; Horst H. (Sindelfingen, DT)
Wiedmann; Siegfried K. (Stuttgart, DT)
|
| Assignee: |
International Business Machines Corporation (Armonk, NY) |
| Primary Examiner: |
|
| Assistant Examiner: |
|
| Attorney Or Agent: |
|
| U.S. Class: |
257/477; 257/517; 257/547; 257/577; 257/E27.04; 257/E29.034 |
| Field Of Search: |
|
| International Class: |
|
| U.S Patent Documents: |
|
| Foreign Patent Documents: |
|
| Other References: |
|
|
| Abstract: |
to prevent a parasitic lateral transistor or thyristor effect in an integrated structure including a transistor and a further device sharing one common zone, a doped region which is more highly doped with regard to the common zone and which simultaneously constitutes a contact region is arranged between the components to be separated. This separating and contact region acts as a barrier reflecting an undesired minority carrier current flow injected from the further device. In the preferred embodiment, the transistor structure is a bipolar transistor and the further semiconductor device is a Schottky diode integrated into the collector zone of the bipolar transistor. |
| Claim: |
|
| Description: |
|
|
|
|
