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Method for the thermal oxidation of silicon with added chlorine |
| T954009 |
Method for the thermal oxidation of silicon with added chlorine
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| Inventor: |
Malin, et al. |
| Date Issued: |
January 4, 1977 |
| Application: |
05/596,498 |
| Filed: |
July 16, 1975 |
| Inventors: |
Malin; Konrad (Dettenhausen, DT)
Seybold; Dietrich (Boeblingen, DT)
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| Assignee: |
International Business Machines Corporation (Armonk, NY) |
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| U.S. Class: |
257/E21.285; 427/399; 438/774 |
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| Abstract: |
the dry thermal oxidation of silicon semiconductor material to produce an oxide layer, such as the gate oxide of a field effect transistor, is carried out by flowing oxygen over the surface of the semiconductor at an elevated temperature to form a layer of silicon oxide. The electrical properties of the layer are improved by adding chlorine to the oxygen in the form of between 0.2 and 5.0 mol % of carbon tetrachloride in order to introduce chlorine into the growing oxide layer. |
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