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Polysilicon-base self-aligned bipolar transistor process and structure |
| T104102 |
Polysilicon-base self-aligned bipolar transistor process and structure
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| Patent Drawings: | |
| Inventor: |
Ho, et al. |
| Date Issued: |
April 3, 1984 |
| Application: |
06/370,897 |
| Filed: |
April 22, 1982 |
| Inventors: |
Ho; Allen P. (Poughkeepsie, NY)
Horng; Cheng T. (San Jose, CA)
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| U.S. Class: |
257/514; 257/518; 257/E21.166; 257/E21.375; 257/E21.376; 257/E21.507; 257/E29.185 |
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| Abstract: |
A bipolar transistor isolated by deep recessed oxide 19, with shallow recessed oxide 15 separating the base 32, 37 from collector contact 35, with polysilicon contact 26 to base extrinsic region 37, the polysilicon being self-aligned with the emitter 36 and the emitter contact. |
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