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Buffer compositions
RE44853 Buffer compositions
Patent Drawings:

Inventor: Hsu, et al.
Date Issued: April 22, 2014
Application:
Filed:
Inventors:
Assignee:
Primary Examiner: Kopec; Mark
Assistant Examiner: Thomas; Jaison
Attorney Or Agent:
U.S. Class: 252/519.33; 252/519.5; 252/520.1; 252/521.1
Field Of Search: ;252/519.33; ;252/519.5; ;252/520.1; ;252/521.1
International Class: H01B 1/12; H01B 1/02
U.S Patent Documents:
Foreign Patent Documents: 1439029; 1934725; 4334390; 560721; 440957; 488321; 817540; 593111; 1026152; 1191612; 1191614; 1231251; 1286569; 962943; 1371709; 1408563; 1 026 152; 1726051; 2632979; 2124635; 62119237; 02249221; 04234453; 05129162; 09176310; 11186103; 11353934; 2000505249; 2001006878; 2001270999; 2001325831; 2002500408; 2002082082; 2002246177; 2003187983; 2003217862; 2003264083; 2003297582; 2004500449; 2004501494; 2004502004; 2004082395; 2005537348; 2006500463; 2006108064; 2006527277; 2007502531; 2007529607; 200304238; 9831716; 9934371; 9952954; 0070655; 0138219; 0141230; 0141512; 0199192; 0199207; 0200759; 0202714; 0215645; 02065484; 02099907; 03006515; 03006537; 03008424; WO 03/006537; WO 03/008424; 03012908; 03040257; 03046540; 03050824; 03063555; 03074601; 03091688; 2004016710; 2004020444; 2004020502; 2004029128; 2004029133; 2004029176; 2004094501; 2004105150; 2005003083; 2005018012; 2005024853; 2005041217; 2005052027; 2005080525; 2005090435; 2005090436; 2005093872; 2005121217; 2006073968; 2006078264; 2007002681; 2007002740; 2007092296; 2007120143
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Abstract: .[.Buffer compositions comprising semiconductive oxide particles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer are provided. Semiconductive oxide particles include metal oxides and bimetallic oxides. Acid polymers are derived from monomers or comonomers of polyolefins, polyacrylates, polymethacrylates, polyimides, polyamides, polyaramides, polyacrylamides, polystrenes. The polymer backbone, side chains, pendant groups or combinations thereof may be fluorinated or highly fluorinated. Semiconductive polymers include polymers or copolymers derived from thiophenes, pyrroles, anilines, and polycyclic heteroaromatics. Methods for preparing buffer compositions are also provided..]. .Iadd.A buffer composition consisting essentially of semiconductive oxide particles wherein the semiconductive oxide particles comprise a bimetallic oxide selected from indium-tin oxide ("ITO"), indium-zinc oxide ("IZO"), gallium-indium oxide, and zinc-antimony double oxide and a fluorinated acid polymer wherein the fluorinated acid polymer has a formula according to Formula XV: ##STR00001## where j.gtoreq.0, k.gtoreq.0 and 4.ltoreq.(j+k).ltoreq.199, Q.sup.1 and Q.sup.2 are F or H, R.sub.f.sup.2 is F or a perfluoroalkyl radical having 1-10 carbon atoms either unsubstituted or substituted by one or more ether oxygen atoms, h=0 or 1, i=0 to 3, g=0 or 1, wherein the buffer composition has a work-function greater than 5.0 eV. In some embodiments, the H on the SO.sup.3 may be replaced by either Li, Na, or K. .Iaddend.
Claim: What is claimed is:

1. A buffer composition consisting essentially of semiconductive oxide particles wherein the semiconductive oxide particles comprise a bimetallic oxide selected fromindium-tin oxide ("ITO"), indium-zinc-oxide ("IZO"), gallium-indium oxide, and zinc-antimony double oxide and a fluorinated acid polymer wherein the fluorinated acid polymer has a formula according to Formula XV: ##STR00023## where j.gtoreq.0, k.gtoreq.0and 4.ltoreq.(j+k).ltoreq.199, Q.sup.1 and Q.sup.2 are F or H, R.sub.f.sup.2 is F or a perfluoroalkyl radical having 1-10 carbon atoms either unsubstituted or substituted by one or more ether oxygen atoms, h=0 or 1, i=0 to 3, g=0 or 1, .[.and E.sup.4 isH or an alkali metal,.]. wherein the buffer composition has a work-function greater than 5.0 eV.

2. An electric device comprising a buffer composition of claim 1.

.Iadd.3. A buffer composition consisting essentially of semiconductive oxide particles wherein the semiconductive oxide particles comprise a bimetallic oxide selected from indium-tin oxide ("ITO"), indium-zinc oxide ("IZO"), gallium-indiumoxide, and zinc-antimony double oxide and a fluorinated acid polymer wherein the fluorinated acid polymer has a formula according to Formula: ##STR00024## where j.gtoreq.0, k.gtoreq.0 and 4.ltoreq.(j+k).ltoreq.199, Q.sup.1 and Q.sup.2 are F or H,R.sub.f.sup.2 is F or a perfluoroalkyl radical having 1-10 carbon atoms either unsubstituted or substituted by one or more ether oxygen atoms, h=0 or 1, i=0 to 3, g=0 or 1, and E.sup.5 is Li, Na, or K, wherein the buffer composition has a work-functiongreater than 5.0 eV. .Iaddend.
Description:
 
 
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