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Method of multi-level storage in DRAM and apparatus thereof |
| RE37072 |
Method of multi-level storage in DRAM and apparatus thereof
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| Patent Drawings: | |
| Inventor: |
Gillingham |
| Date Issued: |
February 27, 2001 |
| Application: |
08/595,020 |
| Filed: |
January 31, 1996 |
| Inventors: |
Gillingham; Peter B. (Kanata, CA)
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| Assignee: |
Mosaid Technologies, Inc. (Kanata, CA) |
| Primary Examiner: |
Tran; Andrew Q. |
| Assistant Examiner: |
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| Attorney Or Agent: |
Hamilton, Brook, Smith & Reynolds, P.C |
| U.S. Class: |
327/52; 327/56; 365/149; 365/168; 365/189.07; 365/189.09; 365/190 |
| Field Of Search: |
365/189.07; 365/189.09; 365/149; 365/168; 365/190; 327/52; 327/55; 327/56; 327/57 |
| International Class: |
G11C 11/56 |
| U.S Patent Documents: |
4287570; 4415992; 4622655; 4661929; 4771404; 5184324; 5293563 |
| Foreign Patent Documents: |
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| Other References: |
Ohta, Yoshiji et al., Symposium, "A Novel Memory Cell Architecture for High-Density DRAMs," VLSI Circuits, May 1989, pp. 101-102.. |
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| Abstract: |
A method of processing data having one of four voltage levels stored in a DRAM cell is comprised of sensing whether or not the data voltage is above or below a voltage level midway between a highest and a lowest of the four levels, setting the voltage on a reference line higher than the lowest and lower than the next highest of the four levels in the event the data voltage is below the midway voltage level, and setting the voltage on the reference line higher than the second highest and lower than the highest of the four levels in the event the data voltage is above the midway point, and sensing whether the data voltage is higher or lower than the reference line, whereby which of the four levels the data occupies is read. |
| Claim: |
I claim:
1. A method of processing data having one of four voltage levels stored in a DRAM cell comprising:
.Iadd.(a) dumping a charge stored in the DRAM cell onto sub-bitlines of a pair of bitlines to provide a sensing voltage of one of four sensing voltage levels on the sub-bitlines; .Iaddend.
(.[.a.]. .Iadd.b.Iaddend.) sensing whether or not .[.the data.]. .Iadd.the sensing .Iaddend.voltage is above or below a voltage level midway between a highest and a lowest of said four .Iadd.sensing voltage .Iaddend.levels,
(.[.b.]. .Iadd.c.Iaddend.) setting the voltage, on a reference .[.line.]. .Iadd.sub-bitline of the pair of bit lines, .Iaddend.higher than the lowest and lower than the next highest of said four .Iadd.sensing voltage .Iaddend.levels in theevent the .[.data.]. .Iadd.sensing .Iaddend.voltage is below said midway voltage level, and setting the voltage on the reference .[.line.]. .Iadd.sub-bitline .Iaddend.higher than the second highest and lower than the highest of said four .Iadd.sensingvoltage .Iaddend.levels in the event the .[.data.]. .Iadd.sensing .Iaddend.voltage is above said midway voltage level, and
(.[.c.]. .Iadd.d.Iaddend.) sensing whether the .[.data.]. .Iadd.sensing .Iaddend.voltage is higher or lower than .Iadd.the voltage on .Iaddend.the reference .[.line.]. .Iadd.sub-bitline.Iaddend., whereby which of the four levels the dataoccupies is read.
2. A method as defined in claim 1 in which the voltage on the reference .[.line.]. .Iadd.sub-bitline .Iaddend.is set at approximately one half the voltage difference between either of the lowest or highest .Iadd.sensing .Iaddend.voltage leveland the adjacent one of the four .Iadd.sensing .Iaddend.voltage levels.
3. A method as defined in claim 1 in which said four .Iadd.sensing voltage .Iaddend.levels are at 0, 1/3, 2/3 and 1 times a power supply voltage scaled by the cell to bitline capacitance ratio, and in which the voltage on the reference .[.linein step (b).]. .Iadd.sub-bitline in step (c) .Iaddend.is set at either 1/6 or 5/6 the power supply voltage .[.in step (b).]. scaled by the cell to bitline capacitance ratio.
4. A method as defined in claim 1 including charging a dummy capacitor to a level representing whether or not said data is above or below said midway voltage, and setting the voltage on the reference .[.line.]. .Iadd.sub-bitline .Iaddend.byestablishing a voltage level thereon which is midway between the highest and lowest of said four .Iadd.sensing voltage .Iaddend.levels, then raising or lowering the voltage level thereon by dumping the charge from said dummy capacitor thereon.
5. A method of processing data having one of plural levels stored in a DRAM cell capacitor comprising:
(a) dumping the charge of the cell capacitor on a first conductor of a pair of conductors of a folded bitline,
(b) maintaining the other conductor of said pair of conductors split into other sub-bitline conductors and charging each of said other sub-bitline conductors to an intermediate voltage,
(c) splitting said first of said pair of conductors into first sub-bitline conductors,
(d) sensing one of said sub-bitline conductors to determine whether the charge of said cell has a higher voltage than the intermediate voltage of one of said other sub-line conductors and providing a logic level result signal,
(e) storing said logic level result signal in a dummy cell capacitor,
(f) setting a charge storage capacitor and all of the sub-bitlines.Iadd., .Iaddend.other than a first sub-bitline conductor on which the .[.charges.]. .Iadd.charge .Iaddend.of .Iadd.the .Iaddend.cell capacitor was dumped, at .[.to.]. apredetermined voltage,
(g) dumping charge stored in the dummy cell capacitor on said .[.sub-bitlines.]. .Iadd.sub-bitline .Iaddend.conductors other than the first sub-bitline conductor to which the charge of the cell capacitor was dumped, and on said charge storagecapacitor together, thereby varying the predetermined voltage stored thereon to a degree related to the capacitance of said dummy cell capacitor, said charge storage capacitor and said predetermined voltage, to a level above or below the intermediatelevel,
(h) isolating the sub-bitlines,
(i) applying said intermediate voltage to one of said other sub-bitline conductors,
(j) comparing the cell voltage on one sub-bitline with the voltage on said other sub-bitline carrying said level above or below the intermediate level to obtain a first logic bit, and comparing the voltages carried by the other sub-bitlines toobtain a second logic bit,
whereby said first and second logic bits are indicative of one of four states corresponding to one of said plural levels stored in the DRAM cell.
6. A method as defined in claim 5 in which said intermediate and said predetermined voltages are the same.
7. A method as defined in claim 6 in which said intermediate and predetermined voltages are the same midpoint voltage between a highest and lowest voltage state representative of four logical states.
8. A method as defined in claim 3, including the further steps of short circuiting two or three of the sub-bitlines to share charge thereon and establish a common voltage level, and storing said shared charge corresponding to the common voltagelevel on said cell, whereby a restore or write operation results.
9. A method as defined in claim 7, including the further steps of writing logic voltage levels to each of the sub-bitline conductors, short circuiting two or three of the sub-bitlines to share charge thereon and establish a common voltage level,and storing said shared charge corresponding to the common voltage level on said cell, whereby a write operation results..Iadd.
10. A method as claimed in claim 1 wherein the voltage on the reference sub-bitline is set by charging a capacitor to a level depending on the results of step (b) and discharging the capacitor onto the reference sub-bitline. .Iaddend..Iadd.
11. A method as claimed in claim 10 wherein the capacitor is discharged onto three sub-bitlines including the reference sub-bitline. .Iaddend..Iadd.
12. A method as claimed in claim 1 including charging a capacitor to a level representing whether or not said sensing voltage is above or below said midway voltage, setting the voltage on the reference sub-bitline by establishing a voltage levelthereon which is midway between the highest and lowest of said four sensing voltage levels and then raising or lowering the voltage level thereon by dumping the charge from said capacitor thereon. .Iaddend..Iadd.
13. A method as claimed in claim 1 wherein the sensing steps (b) and (d) are by sensing amplifiers coupled to opposite ends of the pair of bitlines. .Iaddend..Iadd.
14. A method as claimed in claim 13 wherein the sense amplifiers are disconnected from the pair of bitlines during steps (a) and (c). .Iaddend..Iadd.
15. A method of reading data having one of plural voltage levels stored in a DRAM cell comprising:
dumping a stored voltage from the DRAM cell to sub-bitlines which are disconnected from sense amplifiers;
in a first sense amplifier, sensing the dumped stored voltage on a first sub-bitline relative to a first reference voltage to define a first bit of a multibit representation of the stored data;
dumping a voltage, the level of which is dependent on the value of the first bit, onto a second sub-bitline disconnected from the sense amplifiers to provide a second reference voltage; and
in a second sense amplifier, sensing the dumped stored voltage on a third sub-bitline relative to the second reference voltage to define a second bit of said multibit representation of the stored data. .Iaddend..Iadd.
16. A method as claimed in claim 15 wherein one of four voltage levels is stored in the DRAM cell and each of a pair of bitlines is formed of two sub-bitlines. .Iaddend..Iadd.
17. A method as claimed in claim 16 wherein the voltage, the level of which is dependent on the value of the first bit, is dumped onto three sub-bitlines of the pair of bitlines. .Iaddend..Iadd.
18. A method as claimed in claim 17 in which said four levels are at 0, 1/3, 2/3 and 1 times a power supply voltage scaled by the cell to bitline capacitance ratio, and in which the second reference voltage is set at either 1/6 or 5/6 the powersupply voltage scaled by the cell to bitline capacitance ratio. .Iaddend..Iadd.
19. A method as claimed in claim 15 wherein a sense amplifier is coupled at each end of a pair of bitlines which are divided into sub-bitlines. .Iaddend..Iadd.
20. A method as claimed in claim 15 wherein the step of dumping a voltage to provide a second reference voltage comprises charging a capacitor to a level representing the first bit, setting the voltage on sub-bitlines by establishing a voltagelevel thereon which is midway between the highest and lowest of four levels and then raising or lowering the voltage level on the sub-bitline by dumping the charge from said capacitor thereon. .Iaddend..Iadd.
21. A method as claimed in claim 15 wherein the stored voltage from the DRAM cell is dumped onto sub-bitlines of a single pair of bitlines with a sense amplifier coupled to each end thereof. .Iaddend..Iadd.
22. A method of processing data having one of plural voltage levels stored in a DRAM cell comprising:
dumping a charged stored in the DRAM cell onto sub-bitlines of a pair of bitlines to provide a sensing voltage of one of plural sensing voltage levels on the sub-bitline;
sensing whether the sensing voltage is above or below a voltage level midway between a highest and a lowest of said plural levels,
setting the voltage, on a reference sub-bitline of the pair of bitlines, to a level which is dependent on whether the sensing voltage is sensed to be above or below the midway voltage level; and
sensing whether the sensing voltage is higher or lower than the voltage on the reference sub-bitline. .Iaddend..Iadd.
23. A method as claimed in claim 22 wherein the voltage on the reference sub-bitline is set by charging a capacitor to a level which depends on whether the sensing voltage is above or below said voltage level midway between the highest andlowest of said plural levels, and discharging the capacitor onto the reference sub-bitline. .Iaddend..Iadd.
24. A method as claimed in claim 23 wherein the capacitor is discharged onto three sub-bitlines including the reference sub-bitline. .Iaddend..Iadd.
25. A method as claimed in claim 22 wherein the sensing steps are by sensing amplifiers coupled to opposite ends of the pair of bitlines. .Iaddend..Iadd.
26. A method as claimed in claim 25 wherein the sense amplifiers are disconnected from the pair of bitlines during the steps of dumping a charge and setting the voltage. .Iaddend..Iadd.
27. A method as claimed in claim 22 wherein one of four voltage levels is stored in the DRAM cell. .Iaddend..Iadd.
28. A method as claimed in claim 27 wherein the step of setting the voltage includes charging a capacitor to a level representing whether or not said sensing voltage is above or below said midway voltage, setting the voltage on the referencesub-bitline by establishing a voltage level thereon which is midway between the highest and lowest of said plural levels, and then raising or lowering the voltage level thereon by dumping the charge from said capacitor thereon. .Iaddend..Iadd.
29. A method of processing data having one of plural voltage levels stored in a DRAM cell comprising:
dumping the voltage stored in said DRAM cell onto sub-bitlines of a pair of bitlines to provide a sensing voltage;
sensing the sensing voltage on one of the sub-bitlines relative to a first reference level to provide a first bit;
dumping a charge, the level of which depends on the value of the first bit, onto a sub-bitline to establish a second reference level; and
sensing whether the sensing voltage on another of the sub-bitlines is above or below the second reference level to provide a second bit. .Iaddend..Iadd.
30. A method as claimed in claim 29 wherein the sensing steps are by sensing amplifiers coupled to opposite ends of the pair of bitlines. .Iaddend..Iadd.
31. A method as claimed in claim 30 wherein the sense amplifiers are disconnected from the pair of bitlines during the steps of dumping. .Iaddend..Iadd.
32. A method as claimed in claim 29 wherein one of four voltage levels is stored in the DRAM cell and each of a pair of bitlines is formed of two sub-bitlines. .Iaddend..Iadd.
33. A method as claimed in claim 32 wherein the charge which depends on the value of the first bit is dumped onto three sub-bitlines of the pair of bitlines. .Iaddend..Iadd.
34. In a DRAM having plural cell capacitors coupled to a pair of conductors of a folded bitline, a method of processing data having one of plural levels stored in one of said cell capacitors comprising:
dumping the charge of said one of said cell capacitors on a first conductor of the pair of conductors of the folded bitline;
splitting said first of said pair of conductors into first sub-bitline conductors;
charging a sub-bitline of a second conductor of said pair of conductors to an intermediate voltage;
sensing one of said first sub-bitline conductors to determine whether the dumped charge has a higher voltage than the intermediate voltage on said sub-bitline of the second conductor and providing a first logic level result signal;
storing said first logic level result signal in one of said cell capacitors;
dumping the stored first logic level result signal onto sub-bitline conductors to vary the voltage stored thereon to a degree relating to the capacities of the cell capacitor from which the second first logic level result signal is being dumpedand relating to the sub-bitlines, to a level above or below the intermediate voltage; and
comparing the cell voltage on another of the first sub-bitline conductors against the level above or below the intermediate voltage to obtain a second logic level result signal. .Iaddend..Iadd.
35. A method of processing data having one of plural voltage levels stored in a DRAM cell comprising:
providing a pair of bitlines having a sense amplifier connected at each end thereof, the bitlines being formed of sub-bitlines, the DRAM cell being connected to only one of the sub-bitlines;
with the sense amplifiers disconnected from the bitlines, dumping the voltage stored in the DRAM cell onto two sub-bitlines of the pair of bitlines to provide a sensing voltage level;
with one of the sensing amplifiers, sensing the sensing voltage on one of the sub-bitlines relative to a first reference level on another sub-bitline to provide a first bit;
with the sense amplifiers disconnected from the bitlines, dumping a charge which depends on the value of the first bit onto three sub-bitlines of the pair of bitlines to establish a second reference level; and
with the other of the sensing amplifiers, sensing whether the sensing voltage on another of the sub-bitlines is above or below the second reference level to provide a second bit. .Iaddend..Iadd.
36. A dynamic random access memory comprising:
an array of DRAM cells, each comprising a storage capacitor and a transistor for charging the capacitor from or discharging the capacitor to a single bitline of a pair of bitlines, and a plurality of word lines for enabling the transistors of theDRAM cells;
means for sensing whether a sensing voltage on a bitline, discharged from the data voltage stored on a DRAM cell capacitor, is above or below a first reference level;
means for setting the voltage on a reference line to a level which is dependent on whether the sensing voltage is sensed to be above or below the first reference level; and
means for sensing whether the sensing voltage is higher or lower than a second reference level. .Iaddend..Iadd.
37. A dynamic random access memory as claimed in claim 36 wherein pairs of bitlines are coupled to sense amplifiers at opposite ends thereof and the bitlines are divided into sub-bitlines. .Iaddend..Iadd.
38. A dynamic random access memory as claimed in claim 37 wherein each bitline is divided into two sub-bitlines. .Iaddend..Iadd.
39. A dynamic random access memory comprising:
means for discharging a stored voltage from a DRAM cell to a single bitline of a pair of bitlines;
means for splitting the bitlines into sub-bitlines;
means for comparing the voltage on a sub-bitline to a first reference voltage to define a first bit of a multibit representation of a plural voltage level;
means for setting a second reference voltage, the level of which is dependent on the value of the first bit; and
means for comparing the voltage on a second sub-bitline to the second reference voltage to define a second bit of said multibit representation of the plural voltage levels. .Iaddend..Iadd.
40. A dynamic random access memory as claimed in claim 39 wherein pairs of bitlines are coupled to sense amplifiers at opposite ends thereof and the bitlines are divided into sub-bitlines. .Iaddend..Iadd.
41. A dynamic random access memory as claimed in claim 40 wherein each bitline is divided into two sub-bitlines. .Iaddend. |
| Description: |
FIELD OF THE INVENTION
This invention relates to dynamic random access memory (DRAM) memories, and in particular to a method of storing a variable level signal in each cell of a DRAM for representing more than one bit in each cell.
BACKGROUND OF THE INVENTION
To store for example two bits in a DRAM cell, it must be able to store four different voltage levels. A problem with such cells, is that noise margins are reduced to one-third that of a one bit per cell DRAM, which is too low to withstand theoccasional .alpha.-particle bit.
A second problem with multi-bit storage cells relates to the method of sensing. No simple method of sensing has previously been designed, although attempts have been made to solve this problem, e.g. as described in the publication by M. Aoki, etal, "A 16-Levels/Cell Dynamic Memory", ISSCC Dig. TECH. Papers 1985, pp. 246-247, and in T. Furuyama et al, "An Experimental Two-Bit/Cell Storage DRAM for Macrocell or Memory-On-Application", IEEE Journal of Solid State Circuits, Vol. 24, No. 2, pp. 388-393, April 1989. The technique described by Aoki cannot use normal sense amplifiers. It requires a precision analog D to A converter to implement a staircase waveform and a charge amplifier to sense data. The technique described by Furuyamarequires the generation of precision reference levels to distinguish between four levels. These levels are not self-compensated for offsets developed in the sensing operation, and this method suffers from poor signal margin. Hidaka et al describe atechnique for simultaneously reading two cells at a time in the article "A divided/Shared Bitline Sensing Scheme for 64Mb DRAM Core" in the 1990 Symposium on VLSI Circuitry 1990, IEEE, p,. 15, 16 which while describing dividing a bitline, is not relatedto multiple bit storage in a single cell.
DRAMs have previously been built with cells holding up to sixteen bits of storage, e.g. in the aforenoted article by M. Aoki et al, for use in file memories. A 4 K test array is believed to have been the largest memory built using this design. Leakage characteristics of the DRAM cell were required to be very tightly controlled and even then, accurate sensing of the small voltage differences between levels becomes very difficult. Another problem with this scheme was the length of time requiredto access: a single read cycle required 16 clocks for the read followed by 16 clocks for the restore.
To implement a 2 bit DRAM, one can define the cell as storing one of four voltage levels V.sub.cell0, V.sub.cell1, V.sub.cell2 and V.sub.cell3, and reference voltage midpoints between these four voltage, which can be defined as V.sub.ref1,V.sub.ref2 and V.sub.ref3. These midpoints can be referred to, to differentiate between the four voltage levels. The relative voltage of these levels are shown in Table 1 below.
STORAGE REFERENCE ACTUAL VOLTAGES VOLTAGES VOLTAGE V.sub.cell1 V.sub.DD V.sub.ref3 5/6 V.sub.DD V.sub.cell2 2/3 V.sub.DD V.sub.ref2 1/2 V.sub.DD V.sub.cell1 1/3 V.sub.DD V.sub.ref1 1/6 V.sub.DD V.sub.cell0 V.sub.SS
The storage voltages are the actual voltages stored in the cells, although the sensing voltages are somewhat more attenuated. Since sensing takes place on the bitlines which divide cell charge by the cell to bitline capacitance ratio, much lowervoltages than those in the cell are actually sensed. In a standard DRAM, these voltage differences are in the order of 100-300 mV. It is the voltage midpoints between these smaller signals that must finally be generated to allow for correct sensing.
Furuyama et al in the article noted above describes one method of sensing these voltages. Furuyama et al used three sense amplifiers and three approximate midpoint sensing voltages. The cell charge is shared with the bitline, the bitline issplit into three sections (sub-bitlines) and three sense amplifiers determine whether the cell charge is above or below their particular reference voltages. This data is then converted to two bits and a resulting output. Reconversion of the two bitsallows approximate values to be driven into the bitlines so that restore takes place after the read cycle. A write cycle operates in the same way as the restore section of the read cycle.
It should be noted that since the cell shares charge with three sub-bitlines, and the reference cell with only one sub-bitline, the reference voltage is about three times larger than it should be for sensing, casting doubt on the operability ofthis design. Secondly, three sense amplifiers are used, and since sense amplifiers have been growing proportionally larger and larger with each generation of memory, a minimum of sense amplifiers is desirable. A third problem is that the referencevoltage is .Iadd.not .Iaddend.stored on a cell whose .[.leakage does not.]. .Iadd.characteristics .Iaddend.track the leakage of the data cells, introducing another source of error into the circuit.
SUMMARY OF THE PRESENT INVENTION
In the present invention a method and circuit has been designed which substantially solves .Iadd.some of .Iaddend.the above-identified problems. Only two sense amplifiers are required.[., which generate the sensing voltages at the time ofsensing.]. . In the present invention each bitline is split exactly in half, rather than into thirds, by use of a switch. The .[.noise margins are relatively large, equivalent to that of a standard DRAM maintaining reliability, and the.]. presentdesign can be used as a standard one bit per cell DRAM as an alternative to a multiple bit per cell DRAM, which increases its universality, allows it to be used in present designs, and increases yield.
In accordance with an embodiment of the present invention, a method of processing data having one of four levels stored in a DRAM cell is comprised of sensing whether or not the data voltage is above or below a voltage level midway between ahighest and a lowest of the four levels, setting the voltage on a reference line higher than the lowest and lower than the next highest of the four levels in the event the data voltage is below the midway voltage level, setting the voltage on thereference line higher than the second highest and lower than the highest of the four levels in the event the data voltage is above the midway point, and sensing whether the data voltage is higher or lower in voltage than the reference line, whereby whichof the four levels the data bit occupies is read.
In accordance with an embodiment of the present invention, a method of processing data having one of plural levels stored in a DRAM cell capacitor is comprised of dumping the charge of the cell capacitor on a first of a pair of conductors of afolded bitline, maintaining the other of the pair of conductors split into other sub-bitline conductors and charging each of the other sub-bitline conductors to an intermediate voltage, splitting the first of the conductors into first sub-bitlineconductors, sensing the sub-bitlines to determine whether the charge of the cell has a higher voltage than the intermediate voltage of one of the other sub-bitline conductors and providing a logic level result signal, storing the logic level resultsignal in a dummy cell capacitor, setting a charge storage capacitor and all of the sub-bitlines other than the first sub-bitline maintaining a voltage resulting from the dumped charge to a predetermined voltage, dumping charge stored in the dummy cellcapacitor on the sub-bitlines and charge storage capacitor, thereby varying the predetermined voltage stored thereon to a degree related to the capacities of the dummy cell capacitor, the charge storage cells and the predetermined voltage, to a levelabove or below the intermediate level, isolating the sub-bitlines, applying the intermediate voltage to one of the other sub-bitline conductors, comparing the cell voltage on one sub-bitline with the voltage on the other sub-bitline carrying the levelabove or below the intermediate level to obtain a first logic bit, and comparing the voltages carried by the other sub-bitlines to obtain a second logic bit, whereby the first and second logic bits are indicative of one of four logic states correspondingto one of the plural levels stored in the DRAM cell.
BRIEF INTRODUCTION TO THE DRAWINGS
A better understanding of the invention will be obtained by reference to the detailed description below, in conjunction with the following drawings, in which:
FIG. 1 is a diagram illustrating various voltage levels referred to in the description,
FIG. 2 is a block diagram used to illustrate the basic concepts of the invention;
FIG. 3 illustrates a block diagram in six steps of a read cycle,
FIG. 4 illustrates in block diagram two steps of a write or restore cycle,
FIG. 5 is a schematic diagram illustrating an embodiment of the invention, and
FIG. 6 illustrates a timing diagram of the schematic illustrated in FIG. 5.
DETAILED DESCRIPTION OF THE INVENTION
For a DRAM cell to store two bits using a single cell capacitor, the cell capacitor should store one of four voltage values V.sub.cell0, V.sub.cell1, V.sub.cell2 or V.sub.cell3, wherein V.sub.cell0 represents the lowest and V.sub.cell3 representsthe highest cell voltage. To differentiate between the voltages, mid-point voltages V.sub.ref1 V.sub.ref2 and V.sub.ref3 are defined, as shown in FIG. 1. It may be seen that if the lowest actual cell voltage V.sub.cell0 is V.sub.SS or zero, V.sub.ref1is one-sixth the highest voltage V.sub.DD, V.sub.cell1 is one-third V.sub.DD, V.sub.ref2 is one-half V.sub.DD, V.sub.cell2 is two-thirds V.sub.DD, V.sub.ref3 is five-sixths V.sub.DD and V.sub.cell3 equals V.sub.DD. Thus it may be sen that V.sub.ref1 ismidway between V.sub.cell0 and V.sub.cell1, V.sub.ref2 is midway between V.sub.cell0 and V.sub.cell3 and V.sub.ref3 is midway between V.sub.cell2 and V.sub.cell3.
FIG. 2 will be used to illustrate the basic concept of the invention. A sense amplifier 1 can be connected to a pair of conductors 3A and 3B which form a folded bitline. Another sense amplifier 5 can be connected to a pair of conductors 7A and7B which form the remainder of the folded bitline. In practice conductor 7A is a continuation of conductor 3A, and conductor 7B is a continuation of conductor 3B. The bitline is shown split in half as shown by dotted line 9. In practice, however, anyof the sub-bitline conductors may be connected to any others, e.g. via FET switches.
Capacitor 11 represents a cell on which charge is stored in one of four voltage levels. It is desired to read the level and output two binary bits representing the charge level stored on capacitor 11.
The detailed sequence will be described below. It should be noted that sub-bitline conductor 7A can be brought to V.sub.ref2, which is one-half V.sub.DD. The voltage on sub-bitline 3B resulting from the charge stored on cell capacitor 11 isthen compared with the voltage on conductor 7A to determine whether it is above or below V.sub.ref2.
If the voltage on conductor 3B is above V.sub.ref2, then the continuous conductor 3A-7B is brought to V.sub.ref3, Which is midway between the voltage level V.sub.cell2 and V.sub.cell3. If the voltage on conductor 3B is below V.sub.ref2, then thevoltage on continuous conductor 3A, 7B is brought to V.sub.ref1, which is midway between the V.sub.cell1 and V.sub.cell0 voltages. The continuous conductor 3A, 7B is referred to herein as a reference line.
It may be seen, therefore, that the voltage on the reference line is either above or below one-half V.sub.DD, i.e. V.sub.ref2, and is established midway between the only two voltages Which conductor 3B can have, V.sub.cell0 and V.sub.cell1, orV.sub.cell2 and V.sub.cell3.
The voltage on sub-bitline 3B is then compared with the voltage on the reference line to determine whether it is above or below that voltage. If it is above that voltage the logic voltage must be either V.sub.cell1 or V.sub.cell3 ; whichever oneit is, was established by the first determination of whether the voltage on conductor 3B was above or below the midway voltage V.sub.ref2. Similarly if the voltage on conductor 3B is below the voltage on the reference line, the logic output representseither V.sub.cell0 or V.sub.cell2, and again whichever one it is, was previously determined by the original determination of whether the voltage on conductor 3B is below or above V.sub.ref2. In practice, the voltage on conductor 3B could be comparedagain With V.sub.ref2, which is on lead 7A, to select which of either of the two cell voltage possibilities should be selected.
The result is a two bit binary bit word representing which of the four charge levels is stored in capacitor 11.
FIG. 3 illustrates in more detail a sequence of the steps in the process. Consider first bitlines BL and BL*. These bitline references are not shown as such, but their connection points to a pair of sense amplifiers 13 and 15 are shownreferenced BL and BL*. Sense amplifier 13 is provided to sense bit 0 and sense amplifier 15 is provided to sense bit 1. It is important that bitlines should be able to be split exactly in half, e.g. by apparatus such as a switch into sub-bitlineconductors BLA, BLB, BL*A and BL*B. The sense amplifiers can be enabled or disabled as required. Prior to step 1 all bitline segments are charged to the voltage V.sub.ref2 which is 1/2 .[.V.sub.bb.]. .Iadd.V.sub.dd.Iaddend..
In step 1, sub-bitlines BL.sub.A and BL.sub.B are disconnected from the V.sub.ref2 reference voltage, connected together and the sense amplifiers are not connected to the bitline. The cell capacitor 11 then dumps its charge onto the BL lineformed of conductors BL.sub.A and BL.sub.B, resulting in a voltage which for example is ##EQU1##
where C.sub.S is the cell capacitance and C.sub.BL is the capacitance of the entire bitline.
The voltage V.sub.ref2 which is 1/2 V.sub.DD is applied to the BL* conductors BL*.sub.A and BL*.sub.B.
In step 2, the two halves of the BL conductor are separated, and the bit 1 sense amplifier is connected to sense the voltage on conductor BL.sub.B to determine whether it is above or below the voltage V.sub.ref2 which is on the BL*.sub.Bconductor. Since the voltage is V.sub.cell2 which is above V.sub.ref2, a logic level one signal is stored in dummy cell 17 which is connected to the BL.sub.B lead.
In step 3 the sense amplifier 15 and dummy cell 17 are disconnected from the bitline, and charge storage Ccell capacitor 18 is connected to lead BL.sub.B. Conductors BL.sub.B, BL*.sub.B, and BL*.sub.A are all connected together, and the midpointvoltage V.sub.ref2 is applied thereto.
In step 4 the logic level signal stored in dummy cell 17 is dumped to the sub-bitlines BL.sub.B, BL*.sub.B and BL*.sub.A. The charge is also shared with Ccell 18, which has one half the capacitance of a normal cell. This charge sharing on thethree half bitlines plug Ccell creates the exact reference level needed for the 2nd phase of sensing.
The total capacity of the Ccell 18 should be established so that the resulting voltage on the sub-bitlines is, in this example, V.sub.ref3. Thus for example if the voltage on the Ccell and sub-bitlines was established at V.sub.ref2, one-halfV.sub.DD in step 3, with the charge on dummy cell 17 having been established with full logic level V.sub.DD in step 2, when it is connected to the combined sub-bitlines, in step 4, its charge, being shared with the Ccell, should result in a voltage. ##EQU2##
i.e. V.sub.ref3, which is midway between V.sub.cell2 and V.sub.cell3.
On the other hand, if in step 2 the sensed bit was a zero, charge on dummy cell 17 would have been zero or V.sub.SS. When connected to the combined bitlines in step 4 it would receive charge from the Ccell 18, causing a reduction in voltage toV.sub.ref1, which is midway between V.sub.cell1 and V.sub.cell0. Thus it may be seen that the combined sub-bitlines form a reference line, the voltage of which can be compared with that on cell 11, and corresponds to reference line 3A, 7B described withreference to FIG. 2.
In step 5 the Ccells 18 and dummy cell 17 are disconnected and each of the sub-bitlines are isolated. The voltage V.sub.ref2 of one-half V.sub.DD is applied to the sub-bitline BL*.sub.B. It may be seen that the sub-bitline BL*.sub.B is now atthe midpoint V.sub.ref2, both sub-bitlines BL*.sub.A and BL.sub.B are at the reference line voltage V.sub.ref3 (or V.sub.ref1 if the original cell voltage had been below V.sub.ref2), and the sub-bitline BLA is at the cell capacitor 11 voltage.
The sense amplifiers 13 and 15 are then connected to their respective associated sub-bitlines. Bit zero from sub-bitlines BL*.sub.A and BL.sub.A is sensed in sense amplifier 13, and preferably bit 1 from sub-bitline BL*.sub.B and BL.sub.B isresensed. The outputs of the sense amplifiers 13 and 15 form a two bit binary word (bit 0 and bit 1) representing the level originally stored on cell 11.
FIG. 4 illustrates in steps 7 and 8 a write or restore operation.
Either immediately after step 6, for the restore operation, or at the beginning of a write operation, the sub-bitlines are separated and the sense amplifiers are disabled. In the case of a restore operation, the logic levels are already presenton the sub-bitline conductors. In the case of a write operation, binary bits are written to each of the sub-bitline conductors, or to as many as are required to determine the level of the bit to be stored. To restore V.sub.cell0 or V.sub.cell3 the fulllogic level is left in the cell. To restore V.sub.cell1 or V.sub.cell2 the full logic level must be attenuated by 1/3 as shown in the example step 8. In step 8, the required sub-bitlines BL*.sub.A, BL.sub.A and BL.sub.B shown are short-circuitedtogether and the charge thereon is shared. This shared charge is written to cell capacitor 11 by connection of capacitor 11 thereto.
It should be noted that the concept described above has certain very significant advantages. For example no changes are required to either the currently used DRAM basic memory cell or to the DRAM manufacturing process.
Another advantage of this invention is that the first sensed step, i.e. step 2 of the read cycle described with reference to FIG. 3, can be simplified to appear identical to a standard one-bit-per-cell sense. If only the values 1,1 and 0,0 arestored in the cell, then the first sense has nose margins equal to V.sub.DD /2, the same as a standard DRAM. Indeed, one step regenerative sensing is possible by allowing the sense amplifier to be enabled earlier in the operation and by not bothering tosplit the bitlines. Therefore if two bits per cell in the present design is not used, the memory wafers can still be used as standard one bit per cell structure. The resulting overhead to use the present invention is the extra sense amplifier, bitlinesplitting switches and cycle control logic. However the same design can be used for either one or two bits per cell application.
Reference is now made to FIGS. 5 and 6. In FIG. 5, a schematic diagram of an embodiment of the present invention is shown. The convention is used of the bitline conductors referenced in FIG. 4, that is BL.sub.A, BL*.sub.A, BL.sub.B andBL*.sub.B. All of the transistors used in this embodiment are N channel field effect transistors (FETs). While steps 1-6 are described in detail, a person understanding the description below will be able to understand how the restore and writeoperations proceed without further explanation.
Conductors BL.sub.A and BL.sub.B and BL*.sub.A and BL*.sub.B are connected to respective source and drains of FET transistors 20 and 21 respectively, whose gates are driven by timing signals CB.sub.L and CB.sub.L * respectively. Bitlineconductor BL.sub.B is connected to a terminal of sense amplifier 22 via the source-drain circuit of FET transistor 23, while bitline conductor BL.sub.A is connected to sense amplifier 24 Via FET 25. Similarly bitline conductor BL*.sub.B is connected tothe other terminal of sense amplifier 22 via FET 26 and bitline conductor BL*.sub.A is connected to the other terminal of sense amplifier 24 via FET 27. FETs 23 and 26 are operated via a timing signal ISO2 which is applied to their gates, and FETs 25and 27 are enabled by timing signal ISO1 applied to their gates.
Bitline precharge voltage V.sub.BLP is applied to bitlines BL*.sub.A and BL.sub.A via FETs 28 and 29, and to bitline conductors BL*.sub.B and BL.sub.B via FETs 30 and 31.
The charge to be sensed is stored on cell capacitor 32, which is connected to bitline BL.sub.A via FET 33, which is driven by the timing signal WL1 received from a word line applied to its gate.
In operation, initially the bitline portions are isolated from each other by the C.sub.BL and C.sub.BL* timing voltage being low rendering FETs 20 and 21 non-conductive, and precharge voltage is applied to the four bitline conductors viatransistors 28, 29, 30 and 31 due to timing voltages M.sub.A1, M.sub.A1*, M.sub.A2 and M.sub.A2* being high. At the same time the bitline conductor voltages are equalized via FETs 39 and 34 short-circuiting bitline conductor pairs BL.sub.A andBL.sub.*A, and BL.sub.B and BL.sub.*B respectively, FET 39 being enabled by the E.sub.Q1 timing voltage being applied to its gate, FET 34 being enable by E.sub.Q2.
Once precharge has been completed, the timing voltages E.sub.Q1, E.sub.Q2 and M.sub.A1, M.sub.A2 and M.sub.A2* go low, causing transistors 39, 34, 29, 31 and 30 to open. Timing voltage M.sub.A1* remains high, maintaining precharge voltage(V.sub.ref2 in step 1 of FIG. 3) on bitline conductor B.sub.L*A.
The next step is for the timing voltage C.sub.BL to go high for a short interval and at the same time for W.sub.L1 to go high. This causes FET 20 to conduct, connecting bitline conductors BL.sub.A and BL.sub.B together, and at the same timetransistor 33 conducts, causing the charge from bit storage capacitor 32 to be dumped to the bitline conductor BL.sub.A. Since the timing voltages ISO1 and ISO2 are low, the transistors 25, 27, 23 and 26 are open, isolating the sense amplifiers 24 and22 from the bitlines. The stage of step 1 in which the cell charge from capacitor 32 is dumped onto the bitline conductors BL.sub.A and BL.sub.B and that the remaining bitline conductors BL*.sub.A and BL.sub.*B have been precharged to a midpointreference voltage V.sub.BLP (V.sub.ref2) has thus been completed.
Once the charge has been dumped onto the bitline, the C.sub.BL timing voltage returns to a low level, isolating the bitline conductors BL.sub.A and BL.sub.B and following this the ISO2 voltage goes high, enabling transistors 23 and 26. Thetiming voltages V.sub.S2 and V.sub.R2 flip, causing sense amplifier 22 to sense the bit stored on bitline conductor B.sub.LB relative to the midpoint reference voltage stored on bitline B.sub.L*B. The full logic level value of the sensed bit (0 or 1) isthen applied by sense amplifier 22 to the bitline. Timing voltage W.sub.L2 going high enables FET 35, causing the sensed bit logic level voltage to be stored in dummy capacitor cell 36.
The timing voltage W.sub.L2 then drops, isolating capacitor 36. The voltages V.sub.S1 and V.sub.S2 applied to sense amplifier 22 reverse, disabling sense amplifier 22. This completes step 2, wherein the bit has been sensed and stored in thedummy cell capacitor 36.
The timing voltage ISO2 then drops, causing transistors 23 and 26 to isolate the bitline conductors BL.sub.B and BL.sub.*B from sense amplifier 22. The timing voltages EQ2, M.sub.A2 and M.sub.A2* then go high, causing transistor 34 to conductand short-circuiting bitline conductors BL.sub.B and BL.sub.*B, and causing FETs 31 and 30 to conduct, allowing reference voltage V.sub.BLP (V.sub.ref2) to be reapplied to the bitline conductors BL.sub.B and BL.sub.*B. Then the timing voltage C.sub.BL*goes high, causing transistor 21 to conduct, joining bitline conductors BL.sub.*A with BL.sub.*B and BL.sub.B. Accordingly the reference voltage V.sub.BLP is applied to those three bitline conductors, which are equalized. Ccell capacitor 37 is thenconnected to the bitline conductor BL.sub.B via FET 38 due to the gate of FET 38 going high with the timing voltage V.sub.CL. This completes operation through to the completion of step 3 described with reference to FIG. 3.
The timing voltage M.sub.A2 and M.sub.A2*, as well as M.sub.A1* then go to low level, inhibiting FETs 31, 30 and 28, cutting off reference voltage V.sub.BLP from the bitline conductors.
The next step is for the timing voltage WL2 to go high. This causes the charge stored on dummy cell capacitor 36 to be dumped onto the three interconnected bitline conductors BL.sub.B, BL.sub.*B and BL.sub.A, and as well onto Ccell 37. Thiscompletes step 4 described with reference to FIG. 3.
The timing voltage EQ2 then drops to low level, removing the short circuit between the bitline conductors BL.sub.B and BL.sub.*B, and the timing voltage C.sub.BL* drops to low level, causing separation of the bitline conductors BL.sub.*A andBL.sub.*B. The four bitline conductors are thus mutually isolated.
The timing voltage M.sub.A2* then goes to high level for a short period, recharging the bitline conductor B.sub.L*B to the reference voltage V.sub.BLP. The result, at this stage, is that the bitline conductor B.sub.L*B is at the voltage ofreference level V.sub.BLP, the bitline conductors B.sub.L*A and BL.sub.B are charged to the distributed level resulting from the charge previously stored on dummy capacitor 36, and the bitline conductor B.sub.LA is charged to the level stored on the bitstorage cell capacitor 32. The completes step 5 described with reference to FIG. 3.
The timing voltages ISO1 and ISO2 then go to high level, enabling FETs 23 and 26, and 25 and 27, thus connecting sense amplifiers 22 and 24 to the bitlines. The timing voltages V.sub.S1 and V.sub.S2 and V.sub.R1 and V.sub.R2 are inverted,causing operation of sense amplifiers 22 and 24, thus sensing the bit stored on the two bitlines BL.sub.A and BL.sub.*B relative to the voltages (which are at the same voltage level) on bitline conductors BL.sub.*A and BL.sub.B. This completes theoperation of step 6 described with reference to FIG. 3.
The output result of sense amplifier 22 and 24 are thus two bits which describe the charge level stored in capacitor 32 to the accuracy of 2.sup.2 =4 levels, as described above.
It should be noted that there are several ways of expanding the above invention so that more than four charge levels stored on bit storage capacitor 32 can be detected. One way is to use a variable reference voltage V.sub.BLA which is changed inthe direction of the sensed bit level following either a first or successive sensing steps. A second way is to use more than the three voltage reference levels 1/6 V.sub.DD, 1/2 V.sub.DD, and 5/6 V.sub.DD described. The bitlines may be divided intothree sections for three successive sensing operations to get 8 levels, 4 sections or 16 levels, etc. By successive sensing and charge juggling between the dummy capacitor and Ccell capacitors, first coarse and then finely tuned, voltage references canbe established, following which the sensing of the charge in the memory cell can be effected as being either above or below the established voltage reference.
A person understanding this invention may now conceive of alternative structures and embodiments or variations of the above. All of those which fall within the scope of the claims appended hereto are considered to be part of the presentinvention.
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