Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Short length gang rip saw
D265827 Short length gang rip saw
Patent Drawings:Drawing: D265827-2    Drawing: D265827-3    
« 1 »

(2 images)

Inventor: Paulson, Jr.
Date Issued: August 17, 1982
Application: 06/050,657
Filed: June 21, 1979
Inventors: Paulson, Jr.; Walter O. (Portland, OR)
Assignee:
Primary Examiner: Tung; T.
Assistant Examiner:
Attorney Or Agent: Kolisch, Hartwell & Dickinson
U.S. Class: D15/133
Field Of Search: ; D15/133; 83/431; 83/425; 83/424
International Class:
U.S Patent Documents: D161832; D169902; 3381564; 3724304; 3738403; 3979983; 4198886
Foreign Patent Documents:
Other References:









Abstract:
Claim: The ornamental design for short length gang rip saw, as shown.
Description: FIG. 1 is a front elevation of the short length gang rip saw.

FIG. 2 is a right side elevation view thereof.

FIG. 3 is a rear elevation view thereof.

FIG. 4 is a left side elevation view thereof.

* * * * *
 
 
  Recently Added Patents
Pet cremation urn
Content output control device and content output control method
Semiconductor device and manufacturing method thereof
Scale information for drawing annotations
Method and device for monitoring and analyzing signals
Hybrid interconnect scheme including aluminum metal line in low-k dielectric
Surface-emitting laser light source using two-dimensional photonic crystal
  Randomly Featured Patents
Apparatus for serially conveying receptacle lids
Exposed pad module integrating a passive device therein
System and apparatus for and method of downloading a program, image formation apparatus, and computer product
Mask for lithography
Carbon fibrils, method for producing same and compositions containing same
Operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof
Screening apparatus for a papermaking machine
Closure system for spinal fixation instrumentation
Production and manipulation of charged particles
Integrated circuits with metal-oxide-semiconductor transistors having enhanced gate depletion layers