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Semiconductor device and manufacturing method thereof
8551893 Semiconductor device and manufacturing method thereof
Patent Drawings:

Inventor: Akimoto, et al.
Date Issued: October 8, 2013
Application:
Filed:
Inventors:
Assignee:
Primary Examiner: Everhart; Caridad
Assistant Examiner:
Attorney Or Agent: Husch Blackwell LLP
U.S. Class: 438/104; 257/E21.349; 257/E21.475; 438/479; 438/799
Field Of Search: 438/796; 438/799; 438/104; 438/479; 257/E21.349; 257/E21.471; 257/E21.129; 257/E21.475; 257/E21.347
International Class: H01L 21/00
U.S Patent Documents:
Foreign Patent Documents: 1319781; 1353329; 1380681; 1400577; 1445821; 1463466; 1505161; 1577027; 1619362; 1656617; 0 054 201; 1 033 755; 1 134 811; 1 209 748; 1 280 127; 1 396 881; 1 426 813; 1 533 650; 1 737 044; 2 226 847; 56-134739; 59-13591; 59-124162; 60-11109; 60-83373; 60-170972; 62-98774; 2-226729; 5-251705; 6-88972; 6-281956; 09-074087; 9-139506; 9-172186; 11-103066; 11-274160; 2000-44236; 2000-150900; 2001-044174; 2002-76356; 2002-289859; 2003-037268; 2003-50405; 2003-86808; 2003-234355; 2003-248240; 2004-103957; 2004-235180; 2004-273614; 2004-273732; 2004-311702; 2004-349583; 2005-33172; 2005-93974; 2005-243951; 2005-268724; 2006-186319; 2007-73698; 2007-529118; WO 03/040441; WO 03/071608; WO 03/098699; WO 2004/038757; WO 2005/088716; WO 2005/088726; WO 2005/088726; WO 2005/088726; WO 2005/093849; WO 2006/051994
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Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Claim: What is claimed is:

1. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode; and heating the oxide semiconductor film at a temperature of 250 to 570.degree. C. tocrystallize at least a portion of the oxide semiconductor film, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states.

2. The method according to claim 1, wherein the step of heating is performed by using a lamp.

3. The method according to claim 1, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

4. The method according to claim 1, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

5. The method according to claim 1, wherein the step of heating is performed by rapid thermal annealing.

6. The method of according to claim 1, wherein the substrate is a silicon substrate.

7. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; heating the oxide semiconductor film to crystallize at least a portion of the oxide semiconductor film; forming a source electrode and a drain electrode on theoxide semiconductor film; and forming a passivation film over at least the oxide semiconductor film and the source electrode and the drain electrode, wherein each of the source electrode and the drain electrode comprises a titanium film in contact witha surface of the oxide semiconductor film and a second conductive film comprising aluminum or aluminum alloy on the titanium film, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in bothamorphous and polycrystalline states, and wherein the step of heating is performed at a temperature of 250 to 570.degree. C.

8. The method according to claim 7, wherein the heating step is performed by using a lamp.

9. The method according to claim 7, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

10. The method according to claim 7, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

11. The method according to claim 7, wherein the step of heating is performed by rapid thermal annealing.

12. The method according to claim 7, wherein the step of forming the source electrode and the drain electrode on the oxide semiconductor film occurs after the step of heating the oxide semiconductor film.

13. The method of according to claim 7, wherein the substrate is a silicon substrate.

14. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; patterning the oxide semiconductor film; and heating the patterned oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least aportion of the oxide semiconductor film, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states.

15. The method according to claim 14, wherein the heating step is performed for 1 minute to 1 hour.

16. The method according to claim 14, wherein the heating step is performed by using a lamp.

17. The method according to claim 14, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

18. The method according to claim 14, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

19. The method according to claim 14, wherein the step of heating is performed by rapid thermal annealing.

20. The method according to claim 14, wherein the oxide semiconductor film further comprises nitrogen.

21. The method of according to claim 14, wherein the substrate is a silicon substrate.

22. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; patterning the oxide semiconductor film; heating the patterned oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least a portionof the oxide semiconductor film, and forming a passivation film over the oxide semiconductor film by sputtering, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous andpolycrystalline states.

23. The method of according to claim 22, wherein the substrate is a silicon substrate.

24. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over, the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; patterning the oxide semiconductor film; and heating the patterned oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least aportion of the oxide semiconductor film, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states, wherein the heating step comprises a preheatingstate and a main heating state after the preheating, and wherein a temperature gradient in the main heating state is larger than a temperature gradient in the preheating state.

25. The method of according to claim 24, wherein the substrate is a silicon substrate.

26. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; heating the oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least a portion of the oxide semiconductor film; and patterningthe oxide semiconductor film after heating the oxide semiconductor film, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states.

27. The method according to claim 26, wherein the heating step is performed for 1 minute to 1 hour.

28. The method according to claim 26, wherein the heating step is performed by using a lamp.

29. The method according to claim 26, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

30. The method according to claim 26, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

31. The method according to claim 26, wherein the step of heating is performed by rapid thermal annealing.

32. The method according to claim 26, wherein the oxide semiconductor film further comprises nitrogen.

33. The method of according to claim 26, wherein the substrate is a silicon substrate.

34. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; heating the oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least a portion of the oxide semiconductor film; patterning theoxide semiconductor film after heating the oxide semiconductor film; and forming a passivation film over the oxide semiconductor film by sputtering, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxidesemiconductor in both amorphous and polycrystalline states.

35. The method according to claim 34, wherein the oxide semiconductor film comprises nitrogen.

36. The method of according to claim 34, wherein the substrate is a silicon substrate.

37. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; heating the oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least a portion of the oxide semiconductor film; and patterningthe oxide semiconductor film after heating the oxide semiconductor film, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states, wherein the heatingstep comprises a preheating state and a main heating state after the preheating, and wherein a temperature gradient in the main heating state is larger than a temperature gradient in the preheating state.

38. The method of according to claim 37, wherein the substrate is a silicon substrate.

39. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming a second insulating film over the first insulating film; forming an oxide semiconductor film over the gate electrode with the first and second insulating films interposed between the oxide semiconductor film and the gate electrode; heating the oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least a portion of the oxide semiconductor film; patterning the oxide semiconductor film after heating the oxide semiconductor film; and forming a passivation film over the oxide semiconductor film by sputtering, wherein, after theheating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states, and wherein the first insulating film and the second insulating film are fanned consecutively in the samechamber without breaking a vacuum and under the same temperature.

40. The method according to claim 39, wherein the heating step is performed for 1 minute to 1 hour.

41. The method according to claim 39, wherein the heating step is performed by using a lamp.

42. The method according to claim 39, wherein the oxide semiconductor film is formed by sputtering using at least oxygen gas.

43. The method according to claim 39, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

44. The method according to claim 39, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

45. The method according to claim 39, wherein the heating step comprises a preheating state and a main heating state after the preheating, and wherein a temperature gradient in the main heating state is larger than a temperature gradient in thepreheating state.

46. The method according to claim 39, wherein the step of heating is performed by rapid thermal annealing.

47. The method according to claim 39, wherein the first insulating film is formed by sputtering using at least oxygen gas and wherein the second insulating film is formed by sputtering using at least oxygen gas.

48. The method according to claim 39, wherein the oxide semiconductor film further comprises nitrogen.

49. The method of according to claim 39, wherein the substrate is a silicon substrate.

50. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming a first insulating film comprising silicon nitride over the gate electrode; forming a second insulating filmcomprising silicon oxide over the first insulating film; forming an oxide semiconductor film over the gate electrode with the first and second insulating films interposed between the oxide semiconductor film and the gate electrode; heating the oxidesemiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least a portion of the oxide semiconductor film; patterning the oxide semiconductor film after heating the oxide semiconductor film; and forming a passivation film over theoxide semiconductor film by sputtering, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states, and wherein the first insulating film and the secondinsulating film are formed consecutively in the same chamber without breaking a vacuum and under the same temperature.

51. The method according to claim 50, wherein the heating step is performed for 1 minute to 1 hour.

52. The method according to claim 50, wherein the heating step is performed by using a lamp.

53. The method according to claim 50, wherein the oxide semiconductor film is fainted by sputtering using at least oxygen gas.

54. The method according to claim 50, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

55. The method according to claim 50, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

56. The method according to claim 50, wherein the heating step comprises a preheating state and a main heating state after the preheating, and wherein a temperature gradient in the main heating state is larger than a temperature gradient in thepreheating state.

57. The method according to claim 50, wherein the step of heating is performed by rapid thermal annealing.

58. The method according to claim 50, wherein the first insulating film is formed by sputtering using at least oxygen gas and wherein the second insulating film is formed by sputtering using at least oxygen gas.

59. The method of according to claim 50, wherein the substrate is a silicon substrate.

60. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; heating the oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least a portion of the oxide semiconductor film; forming a sourceelectrode and a drain electrode on the oxide semiconductor film; and forming a passivation film over at least the oxide semiconductor film and the source electrode and the drain electrode, wherein, after the heating step, the oxide semiconductor filmcomprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states, and wherein each of the source electrode and the drain electrode comprises a metal nitride film in contact with a surface of the oxide semiconductor filmand a second conductive film comprising aluminum or aluminum alloy on the metal nitride film.

61. The method according to claim 60, wherein the heating step is performed for 1 minute to 1 hour.

62. The method according to claim 60, wherein the heating step is performed by using a lamp.

63. The method according to claim 60, wherein the oxide semiconductor film is formed by sputtering using at least oxygen gas.

64. The method according to claim 60, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

65. The method according to claim 60, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum; chromium and niobium.

66. The method according to claim 60, wherein the heating step comprises a preheating state and a main heating state after the preheating, and wherein a temperature gradient in the main heating state is larger than a temperature gradient in thepreheating state.

67. The method according to claim 60, wherein the step of heating is performed by rapid thermal annealing.

68. The method according to claim 60, wherein the step of forming the source electrode and the drain electrode on the oxide semiconductor film occurs after the step of heating the oxide semiconductor film.

69. The method according to claim 60, wherein the insulating film is formed by sputtering using at least oxygen gas.

70. The method according to claim 60, wherein the oxide semiconductor film further comprises nitrogen.

71. The method of according to claim 60, wherein the substrate is a silicon substrate.

72. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; heating the oxide semiconductor film by lamp heating to crystallize at least a portion of the oxide semiconductor film; and patterning the oxide semiconductor filmafter heating the oxide semiconductor film, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states, and wherein each of the insulating film and theoxide semiconductor film is formed by sputtering using at least oxygen gas.

73. The method according to claim 72, wherein the heating step is performed for 1 minute to 1 hour.

74. The method according to claim 72, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

75. The method according to claim 72, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

76. The method according to claim 72, wherein the heating step is performed by using a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, and a highpressure mercury lamp.

77. The method of according to claim 72, wherein the substrate is a silicon substrate.

78. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; and heating the oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least a portion of the oxide semiconductor film, wherein eachof the insulating film and the oxide semiconductor film is formed by sputtering using at least oxygen gas, and wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous andpolycrystalline states.

79. The method according to claim 78, wherein the step of heating is performed by using a lamp.

80. The method according to claim 78, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

81. The method according to claim 78, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

82. The method according to claim 78, wherein the step of heating is performed by rapid thermal annealing.

83. The method according to claim 78, wherein the oxide semiconductor film further comprises nitrogen.

84. The method of according to claim 78, wherein the substrate is a silicon substrate.

85. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; heating the oxide semiconductor film to crystallize at least a portion of the oxide semiconductor film; forming a source electrode and a drain electrode on theoxide semiconductor film; and forming a passivation film over at least the oxide semiconductor film and the source electrode and the drain electrode, wherein each of the source electrode and the drain electrode comprises a titanium film in contact witha surface of the oxide semiconductor film and a second conductive film comprising aluminum or aluminum alloy on the titanium film, wherein each of the insulating film and the oxide semiconductor film is formed by sputtering using at least oxygen gas,wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states, and wherein the step of heating is performed at a temperature of 250 to 570.degree. C.

86. The method according to claim 85, wherein the heating step is performed by using a lamp.

87. The method according to claim 85, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

88. The method according to claim 85, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

89. The method according to claim 85, wherein the step of heating is performed by rapid thermal annealing.

90. The method according to claim 85, wherein the step of forming the source electrode and the drain electrode on the oxide semiconductor film occurs after the step of heating the oxide semiconductor film.

91. The method of according to claim 85, wherein the substrate is a silicon substrate.

92. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; patterning the oxide semiconductor film; and heating the patterned oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least aportion of the oxide semiconductor film, wherein the insulating film is formed by sputtering using at least oxygen gas and the oxide semiconductor film is formed by sputtering using at least oxygen gas, and wherein, after the heating step, the oxidesemiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states.

93. The method according to claim 92, wherein the heating step is performed for 1 minute to 1 hour.

94. The method according to claim 92, wherein the heating step is performed by using a lamp.

95. The method according to claim 92, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

96. The method according to claim 92, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

97. The method according to claim 92, wherein the step of heating is performed by rapid thermal annealing.

98. The method of according to claim 92, wherein the substrate is a silicon substrate.

99. A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with theinsulating film interposed between the oxide semiconductor film and the gate electrode; heating the oxide semiconductor film at a temperature of 250 to 570.degree. C. to crystallize at least a portion of the oxide semiconductor film; and patterningthe oxide semiconductor film after heating the oxide semiconductor film, wherein, after the heating step, the oxide semiconductor film comprises an In--Ga--Zn--O based oxide semiconductor in both amorphous and polycrystalline states, and wherein theinsulating film is formed by sputtering using at least oxygen gas and the oxide semiconductor film is formed by sputtering using at least oxygen gas.

100. The method according to claim 99, wherein the heating step is performed for 1 minute to 1 hour.

101. The method according to claim 99, wherein the heating step is performed by using a lamp.

102. The method according to claim 99, wherein the oxide semiconductor film is heated in an atmosphere comprising oxygen.

103. The method according to claim 99, wherein the gate electrode comprises one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium and niobium.

104. The method according to claim 99, wherein the step of heating is performed by rapid thermal annealing.

105. The method of according to claim 99, wherein the substrate is a silicon substrate.
Description:
 
 
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