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Semiconductor device including multiple insulating films
8525183 Semiconductor device including multiple insulating films
Patent Drawings:

Inventor: Yamazaki, et al.
Date Issued: September 3, 2013
Application:
Filed:
Inventors:
Assignee:
Primary Examiner: Soward; Ida M
Assistant Examiner:
Attorney Or Agent: Nixon Peabody LLPCostellia; Jeffrey L.
U.S. Class: 257/72; 257/291; 257/57; 257/59; 257/66; 257/774; 257/775; 257/E29.117; 257/E29.137; 257/E29.151; 257/E29.202; 257/E29.273
Field Of Search: 257/57; 257/59; 257/66; 257/72; 257/291; 257/E29.117; 257/E29.137; 257/E29.151; 257/E29.202; 257/E29.273; 257/774; 257/775
International Class: H01L 29/04; H01L 31/113; H01L 31/062; H01L 31/112; H01L 29/76; H01L 31/20; H01L 31/0376; H01L 29/10; H01L 31/036; H01L 29/15; H01L 23/48; H01L 29/40; H01L 23/52
U.S Patent Documents:
Foreign Patent Documents: 0 556 484; 0 603 866; 0 680 082; 0 878 840; 1 031 873; 1 122 773; 1 128 439; 1128430; 1 148 553; 1 566 837; 56-111258; 64-054762; 1-156725; 02-025024; 02-039541; 02-044769; 02-159730; 2-234134; 03-020046; 03-095938; 03-095939; 03-280018; 03-280420; 04-139828; 04-142740; 04-155834; 04-196328; 04-358129; 05-055581; 05-055582; 05-082442; 05-226364; 05-249478; 05-275373; 06-291314; 07-056190; 07-273191; 08-152651; 08-181214; 08-203876; 10-039334; 10-048668; 10-056182; 10-068972; 10-307305; 11-103069; 11-183929; 11-345981; 2001-189462; 2001-223267; 2001-313397; 2001-318622; 2001-318628; 2001-356711; 2002-006777; 2003-017273; WO 92/14268; WO 03/038533
Other References:









Abstract: A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
Claim: What is claimed is:

1. A semiconductor device comprising: a first insulating film including a first hole; a second insulating film over the first insulating film, the second insulating filmincluding a second hole overlapping with the first hole, wherein the first hole is surrounded by the second hole, and wherein a center of the first hole is off a center of the second hole.

2. The semiconductor device according to claim 1, wherein a side wall of the second hole has a curved surface.

3. The semiconductor device according to claim 1, wherein the first insulating film is an inorganic insulating film and the second insulating film is an organic resin film.

4. The semiconductor device according to claim 3, further comprising a third insulating film on the second insulating film.

5. The semiconductor device according to claim 1, wherein the second insulating film comprises a photosensitive resin.

6. A semiconductor device comprising: a first insulating film including a first hole; a second insulating film over the first insulating film, the second insulating film including a second hole overlapping with the first hole, wherein thefirst hole is surrounded by the second hole, and wherein the second hole includes a first bottom edge and a second bottom edge, and a distance between the first hole and the first bottom edge is different from a distance between the first hole and thesecond bottom edge.

7. The semiconductor device according to claim 6, wherein the first bottom edge is opposed to the second bottom edge, and wherein the second hole includes a third bottom edge between the first bottom edge and the second bottom edge, and adistance between the first hole and the third bottom edge is larger than the distance between the first hole and the first bottom edge and shorter than the distance between the first hole and the second bottom edge.

8. The semiconductor device according to claim 7, wherein a side wall of the second hole has a curved surface.

9. The semiconductor device according to claim 7, wherein the first insulating film is an inorganic insulating film and the second insulating film is an organic resin film.

10. The semiconductor device according to claim 9, further comprising a third insulating film on the second insulating film.

11. A semiconductor device comprising: a thin film transistor; a first insulating film over the thin film transistor, the first insulating film including a first hole; a second insulating film over the first insulating film, the secondinsulating film including a second hole overlapping with the first hole; and a conductive layer over the second insulating film, the conductive layer being in electrical contact with the thin film transistor through the first hole and the second hole,wherein the first hole is surrounded by the second hole, and wherein a center of the first hole is off a center of the second hole.

12. The semiconductor device according to claim 11, wherein a side wall of the second hole has a curved surface.

13. The semiconductor device according to claim 11, wherein the first insulating film is an inorganic insulating film and the second insulating film is an organic resin film.

14. The semiconductor device according to claim 13, further comprising a third insulating film on the second insulating film.

15. A semiconductor device comprising: a thin film transistor; a first insulating film over the thin film transistor, the first insulating film including a first hole; a second insulating film over the first insulating film, the secondinsulating film including a second hole overlapping with the first hole; and a conductive layer over the second insulating film, the conductive layer being in electrical contact with the thin film transistor through the first hole and the second hole,wherein the first hole is surrounded by the second hole, and wherein the second hole includes a first bottom edge and a second bottom edge, and a distance between the first hole and the first bottom edge is different from a distance between the firsthole and the second bottom edge.

16. The semiconductor device according to claim 15, wherein the first bottom edge is opposed to the second bottom edge, and wherein the second hole includes a third bottom edge between the first bottom edge and the second bottom edge, and adistance between the first hole and the third bottom edge is larger than the distance between the first hole and the first bottom edge and shorter than the distance between the first hole and the second bottom edge.

17. The semiconductor device according to claim 15, wherein a side wall of the second hole has a curved surface.

18. The semiconductor device according to claim 15, wherein the first insulating film is an inorganic insulating film and the second insulating film is an organic resin film.

19. The semiconductor device according to claim 18, further comprising a third insulating film on the second insulating film.

20. The semiconductor device according to claim 15, wherein the semiconductor device is a display device.
Description:
 
 
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