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Contactless charge measurement of product wafers and control of corona generation and deposition
7538333 Contactless charge measurement of product wafers and control of corona generation and deposition
Patent Drawings:Drawing: 7538333-10    Drawing: 7538333-11    Drawing: 7538333-12    Drawing: 7538333-13    Drawing: 7538333-14    Drawing: 7538333-15    Drawing: 7538333-16    Drawing: 7538333-3    Drawing: 7538333-4    Drawing: 7538333-5    
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Inventor: Samsavar, et al.
Date Issued: May 26, 2009
Application: 11/460,517
Filed: July 27, 2006
Inventors: Samsavar; Amin (Saratoga, CA)
Schmidt; John M. (Oakland, CA)
Schierle; Rainer (Los Altos, CA)
Horner; Gregory S. (Santa Clara, CA)
Miller; Thomas G. (Sunnyvale, CA)
Xu; Zhiwei (Sunnyvale, CA)
Hu; Xiaofeng (Richardson, TX)
Shi; Jianou (Milpitas, CA)
Edelstein; Sergio (Los Gatos, CA)
Assignee: KLA-Tencor Technologies Corporation (Milpitas, CA)
Primary Examiner: Wells; Nikita
Assistant Examiner:
Attorney Or Agent: Baker & McKenzie LLP
U.S. Class: 250/492.21; 250/492.1; 250/492.2; 250/492.22; 250/492.3; 324/501
Field Of Search: 250/492.21; 250/492.22; 250/492.2; 250/492.3; 250/492.1; 324/501
International Class: H01J 37/30; G01R 31/26; H01J 37/317
U.S Patent Documents:
Foreign Patent Documents: WO 98/57358; WO 01/29568
Other References: Schroder, "Surface voltage and surface photovoltage: history, theory and applications," Measurement Science and Technology, vol. 12, 2001, pp.R16-31. cited by other.
Cosway et al., "Manufacturing Implementation Corona Oxide Silicon (COS) Systems for Diffusion Furnace Contamination Monitoring," 1997 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, pp. 98-102. cited by other.
Miller, "A New Approach for Measuring Oxide Thickness," Semiconductor International, Jul. 1995, pp. 147-148. cited by other.
Numerical Recipes in C. The Art of Scientific Computing, 2.sup.nd Ed., .COPYRGT. Cambridge University Press 1988, 1992, p. 683. cited by other.
Weinberg, "Tunneling of Electrons from Si into Thermally Grown SiO2," Solid-State Electronics, 1977, vol. 20, pp. 11-18. cited by other.
Verkuil, "Rapid Contactless Method for MEasuyring Fixed Oxide Charge ASsociated with Silicon Processing," IBM Technical Disclosure Bulletin, vol. 24, No. 6, 1981, pp. 3048-3053. cited by other.
"Contactless Photovoltage vs. Bias Method for Determining Flat-Band Voltage," IBM Technical Disclosure Bulletin, vol. 32, vol. 9A, 1990, pp. 14-17. cited by other.
"Contactless Electrical Equivalent Oxide Thickness Measurement," IBM Technical Disclosure Bulletin, vol. 29, No. 10, 1987, pp. 4622-4623. cited by other.
U.S. Appl. No. 11/291,075, filed Nov. 30, 2005, Miller. cited by other.
U.S. Appl. No. 10/701,112, filed Nov. 4, 2003, Samsavar. cited by other.
U.S. Appl. No. 11/460,505, filed Jul. 27, 2006, Samsavar. cited by other.
Voltage--Wikipedia, the free encyclopedia, http://en.wikipedia.org/w/index.php?title=Voltage&printable=yes, Apr. 10, 2006, pp. 1-4. cited by other.
Sze; "Physics of Semiconductor Devices," pp. 369; 2nd edition, Wiley-Interscience, 1981. cited by other.
International Search Report and Written Opinion for PCT/US06/32822 filed on Aug. 21, 2006. cited by other.









Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
Claim: What is claimed is:

1. A system, comprising: a corona source configured to deposit a charge onto a specimen; and an environmental control unit configured to alter a property of the environmentwithin the corona source; and a gas flow device coupled to the corona source, wherein the gas flow device is configured to alter a flow of one or more gases within the corona source.

2. The system of claim 1, wherein the property comprises temperature.

3. The system of claim 1, wherein the property comprises pressure.

4. The system of claim 1, wherein the property comprises humidity.

5. The system of claim 1, wherein the corona source is disposed within a measurement chamber, and wherein the environmental control unit is further configured to alter a property of the environment within the measurement chamber.

6. A system, comprising: a corona source configured to deposit a charge onto a specimen; and a control device configured to alter an amount of one or more gases within the corona source.

7. The system of claim 6, wherein the control device is selected from the group consisting of a mass flow controller, a pressure control valve, a vacuum source, and a controllable valve.

8. The system of claim 6, wherein the control device comprises a mixing chamber coupled to a showerhead distributor.

9. The system of claim 6, wherein the control device comprises a tube coupled to an opening in the corona source, wherein the control device is configured such that the one or more gases flow into the tube from the corona source, and whereinthe tube is grounded such that one or more compounded can be separated from the one or more gases.

10. The system of claim 6, wherein the control device comprises a tube coupled to an opening in the corona source, wherein the control device is configured such that the one or more gases flow into the tube from the corona source, and whereinthe tube comprises a gettering material such that one or more species can be separated from the one or more gases.

11. The system of claim 6, wherein the control device is further configured to reduce gas flow rates into and out of the corona source during charge deposition by the corona source.

12. The system of claim 6, wherein the corona source is disposed within a measurement chamber, and wherein the control device is further configured to alter an amount of one or more gases within the measurement chamber.

13. A corona source comprising a gettering material, wherein the gettering material is configured to remove one or more species from the environment within the corona source; and a gas flow device coupled to the corona source, wherein the gasflow device is configured to alter a flow of one or more gases within the corona source.

14. The corona source of claim 13, wherein the one or more species comprise ozone.

15. A system, comprising: a corona source configured to deposit a charge onto a specimen; and a gas flow device coupled to the corona source, wherein the gas flow device is configured to alter a flow of one or more gases external to the coronasource proximate to the specimen.

16. The system of claim 15, wherein the gas flow device is further configured to alter the flow of the one or more gases such that the flow of the one or more gases is substantially laminar.

17. A system, comprising: a corona source configured to deposit a charge onto a specimen through an aperture in the corona source; and a shutter coupled to the corona source, wherein the shutter is configured to be moved over the apertureduring periods of time when charge is not being deposited onto the specimen to reduce deposition of undesired species onto the specimen; and a gas flow device coupled to the corona source, wherein the gas flow device is configured to alter a flow of oneor more gases external to the corona source proximate to the specimen.

18. A system, comprising: a corona source configured to deposit a charge onto a specimen; a sensor configured to measure a parameter of the specimen in response to the charge deposited on the specimen; and a gas flow device configured toremove one or more gases proximate the sensor to reduce deposition of corona byproducts onto the sensor.
Description:
 
 
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