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Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication
7391062 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication
Patent Drawings:Drawing: 7391062-10    Drawing: 7391062-11    Drawing: 7391062-12    Drawing: 7391062-13    Drawing: 7391062-14    Drawing: 7391062-15    Drawing: 7391062-16    Drawing: 7391062-17    Drawing: 7391062-18    Drawing: 7391062-19    
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Inventor: Takayama, et al.
Date Issued: June 24, 2008
Application: 11/073,872
Filed: March 8, 2005
Inventors: Takayama; Toru (Menlo Park, CA)
Baba; Takaaki (Los Altos, CA)
Harris, Jr.; James S. (Stanford, CA)
Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP)
Primary Examiner: Tran; Minh-Loan T
Assistant Examiner:
Attorney Or Agent: McDermott Will & Emery LLP
U.S. Class: 257/187; 257/197; 257/198; 257/E29.188
Field Of Search: 257/12; 257/21; 257/22; 257/183; 257/184; 257/187; 257/190; 257/197; 257/198; 257/E29.188
International Class: H01L 29/06
U.S Patent Documents:
Foreign Patent Documents: 0 951 077; 06164055; 11330633; WO 00/59084
Other References: Kawanishi, H. et al.; "(BAIGa)N Quaternary System and Epitaxial Growth on (0001) 6H-SiC Substrate By Low-Pressure Mo-VPE", Dept. of ElectronicEngineering, Kohgakuin University, Tokyo, Japan. cited by other.
Edgar, J. H., "Unstable Composition Region in the Wurtzite B.sub.1-x-yGa.sub.xAl.sub.yN System", Journal of Crystal Growth 208, Jan. 2000, pp. 179-182. cited by other.









Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BInGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BInGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BInGaAlN material system of an opposite conduction type formed substantially without phase separation.
Claim: We claim:

1. A photo detector device comprising: a certain conduction type of an BAlGaN collector layer without phase separation, an opposite conduction type of BAlGaN base layer without phaseseparation, a conduction type of said certain conduction type of BAlGaN emitter layer without phase separation, all successively formed one upon each other, wherein the bandgap of said BAlGaN base layer is smaller than the other BAlGaN layers.

2. A photo detector device according to claim 1, wherein the AlN mole fraction, x, and the GaN, y, of the said constituent BAlGaN layers satisfy the relationship of 0<x+y<1, 1<=x/1.04+1.03y.

3. A photo detector device according to claim 1, wherein the AlN mole fraction, x, and the GaN, y, of all the constituent layers satisfy the condition that x+1.12y nearly equals to a constant value.

4. A photo detector device according to claim 1, wherein the AlN mole fraction, x, and the GaN, y, of all the constituent layers satisfy the condition that x+1.12y nearly equals to 1.

5. A photo detector device comprising: a certain conduction type of an BGalnN collector layer without phase separation, an opposite conduction type of BGalnN base layer without phase separation, a conduction type of said certain conduction typeof BGaInN emitter layer without phase separation, all successively formed one upon each other, wherein the bandgap of said BGaInN base layer is smaller than the other BGaInN layers.

6. A photo detector device according to claim 5, wherein the GaN mole fraction, x, and the InN, y, of the said constituent BGaInN layers satisfy the relationship of 0<x+y<1, 1<=x/1.03x=0.88y or 1<=0.95x=1.01y.

7. A photo detector device according to claim 5, wherein the GaN mole fraction, x, and the InN, y, of all the constituent layers satisfy the condition that x+1.56y nearly equals to a constant value.

8. A photo detector device according to claim 5, wherein the GaN mole fraction, x, and the InN, y, of all the constituent layers satisfy the condition that x+1.56y nearly equals to 1.

9. A photo detector device comprising: a certain conduction type of an BInAlN collector layer without phase separation, an opposite conduction type of BInAlN base layer without phase separation, a conduction type of said certain conduction typeof BInAlN emitter layer without phase separation, all successively formed one upon each other, wherein the bandgap of said BInAlN base layer is smaller than the other BInAlN layers.

10. A photo detector device according to claim 9, wherein the InN mole fraction, x, and the AlN, y, of the said constituent BInAlN layers satisfy the relationship of 0<x+y<1, 1<=x/1.01x+0.88y or 1<=0.61x+1.04y.

11. A photo detector device according to claim 9, wherein the InN mole fraction, x, and the AlN, y, of all the constituent layers satisfy the condition that 1.75x+y nearly equals to a constant value.

12. A photo detector device according to claim 9, wherein the InN mole fraction, x, and the AlN, y, of all the constituent layers satisfy the condition that 1.75x+y nearly equals to 1.
Description:
 
 
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