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Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern |
| 7371510 |
Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern
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| Patent Drawings: | |
| Inventor: |
Hirayama, et al. |
| Date Issued: |
May 13, 2008 |
| Application: |
11/702,602 |
| Filed: |
February 6, 2007 |
| Inventors: |
Hirayama; Taku (Kawasaki, JP)
Takasu; Ryoichi (Kawasaki, JP)
Sato; Mitsuru (Kawasaki, JP)
Wakiya; Kazumasa (Kawasaki, JP)
Yoshida; Masaaki (Kawasaki, JP)
Tamura; Koki (Kawasaki, JP)
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| Assignee: |
Tokyo Ohka Kogyo Co., Ltd. (Kawasaki-Shi, JP) |
| Primary Examiner: |
Schilling; Richard L. |
| Assistant Examiner: |
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| Attorney Or Agent: |
Wenderoth, Lind & Ponack, LLP |
| U.S. Class: |
430/326; 430/273.1; 430/327; 430/396; 524/543; 524/544; 524/545; 524/546; 524/547 |
| Field Of Search: |
430/273.1; 430/327; 430/325; 430/396; 430/326; 524/543; 524/544; 524/545; 524/546; 524/547 |
| International Class: |
G03F 7/11; G03F 7/20; G03F 7/207 |
| U.S Patent Documents: |
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| Foreign Patent Documents: |
62-65326; 7-253674; 8-76382; 10-303114; 11-352697; 99/49504 |
| Other References: |
Hoffnagle, J.A. et al., "Liquid immersion deep-ultraviolet interferometric lithography", Journal of Vacuum Science and Technology, B 17(6),pp. 3306 to 3309 (1999). cited by other.
Switkes, M. et al., "Immersion lithography at 157 nm", Journal of Vacuum Science and Technology, B 19(6), pp. 2353 to 2356 (2001). cited by other.
Switkes, M. et al., "Resolution Enhancement of 157 nm, Lithography by Liquid Immersion" Proceedings of SPIE, vol. 4691, pp. 459 to 465 (2002). cited by other. |
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| Abstract: |
Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography. |
| Claim: |
The invention claimed is:
1. A method for forming a resist pattern using a liquid immersion lithography process, the method comprising: forming a photoresist film on a substrate; forming, onthe resist film, a protective film having the following properties of: being transparent with respect to exposure light, having substantially no compatibility with a liquid for liquid immersion lithography, and causing no mixing with the resist film; directly placing the liquid for liquid immersion lithography having a predetermined thickness at least on the protective film on the substrate having the resist film and the protective film stacked thereon; selectively irradiating the resist film withlight through the liquid for liquid immersion lithography and the protective film, and optionally subjecting the resultant resist film to heat treatment; removing the protective film from the irradiated resist film; and developing the resist film fromwhich the protective film is removed to obtain a resist pattern and wherein said protective film is formed using a composition comprising a fluorine substituted polymer dissolved in a fluorocarbon solvent.
2. The method for forming a resist pattern using a liquid immersion lithography process according to claim 1, wherein the liquid immersion lithography process is of a construction in which the resist film is exposed through the liquid forliquid immersion lithography present at least on the resist film in a ray of the lithography exposure light toward the resist film, wherein the liquid has a predetermined thickness and has a refractive index larger than that of air and smaller than thatof the resist film, whereby improving the resolution of a resist pattern.
3. The method for forming a resist pattern using a liquid immersion lithography process according to claim 1, wherein the liquid for liquid immersion lithography is water substantially comprised of pure water or deionized water.
4. The method for forming a resist pattern using a liquid immersion lithography process according to claim 1, wherein the resist film is formed from a resist composition comprised of a base polymer which is a polymer comprising (meth)acrylicester units.
5. The method for forming a resist pattern using a liquid immersion lithography process according to claim 1, wherein the resist film is formed from a resist composition comprised of a base polymer which is a polymer having dicarboxylic acidanhydride-containing constitutional units.
6. The method for forming a resist pattern using a liquid immersion lithography process according to claim 1, wherein the resist film is formed from a resist composition comprised of a base polymer which is a polymer having phenolic hydroxylgroup-containing constitutional units.
7. The method for forming a resist pattern using a liquid immersion lithography process according to claim 1, wherein the resist film is formed from a resist composition comprised of a base polymer which is a silsesquioxane resin.
8. The method for forming a resist pattern using a liquid immersion lithography process according to claim 1, wherein the resist film is formed from a resist composition comprised of a base polymer which is a polymer having.alpha.-(hydroxyalkyl)acrylic acid units.
9. The method for forming a resist pattern using a liquid immersion lithography process according to claim 1, wherein the resist film is formed from a resist composition comprised of a base polymer which is a polymer having dicarboxylic acidmonoester units.
10. The method for forming a resist pattern using a liquid immersion lithography process according to claim 1, wherein the fluorine-substituted polymer is comprised of any one of cyclic perfluoroalkyl polyether and chain perfluoroalkylpolyether or both. |
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