| Patent Number |
Title Of Patent |
Date Issued |
| RE37993 |
Laser processing method |
February 18, 2003 |
| Method of processing, e.g., laser annealing, objects such as semiconductor devices with pulsed lasers with high production yield and high reproducibility so as to obtain good characteristics stably. The pulse width of the irradiated pulse beam is set to more than 30 nsec to stabilize |
| RE36314 |
Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film o |
September 28, 1999 |
| An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain re |
| 7425999 |
Electro-optical device and manufacturing method thereof |
September 16, 2008 |
| To suppress the occurrence of a failure caused by static electricity in the manufacturing process of an active matrix type display device in which an active matrix circuit and peripheral drive circuits are integrated on a glass substrate, a protective capacitor to be connected to a s |
| 7423291 |
Semiconductor device and electronic device |
September 9, 2008 |
| A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics |
| 7416907 |
Semiconductor device and method for forming the same |
August 26, 2008 |
| A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitrogen oxide atmosphere |
| 7394516 |
Liquid crystal display device having a particular conductive layer |
July 1, 2008 |
| The present invention related to unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically |
| 7391051 |
Semiconductor device forming method |
June 24, 2008 |
| In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain |
| 7381599 |
Semiconductor device and method for manufacturing the same |
June 3, 2008 |
| A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provid |
| 7371619 |
Semiconductor device and method of manufacturing the same |
May 13, 2008 |
| In order to obtain a thin-film transistor having high characteristics using a metal element for accelerating the crystallization of silicon, a nickel element is selectively added to the surface of an amorphous silicon film (103) in regions (101) and (102) and regions (108) to (110), |
| 7368367 |
Method for forming a semiconductor |
May 6, 2008 |
| A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and silicon, a forming process of a |
| 7355202 |
Thin-film transistor |
April 8, 2008 |
| A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in th |
| 7352003 |
Electro-optical device having thin film transistor with LDD region |
April 1, 2008 |
| An electro-optical device, such as a camera, includes a display unit having a thin film transistor including a source region, a drain region, a channel region formed between the source and drain regions, and a LDD region formed between the channel region and at least one of the source |
| 7348954 |
Liquid crystal display |
March 25, 2008 |
| A liquid crystal display includes a display part displaying an image in accordance with image display data supplied through data signal lines, and a driving part driving the data signal lines by using a plurality of driving devices simultaneously for each data signal line. |
| 7335950 |
Semiconductor device and method of making thereof |
February 26, 2008 |
| To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region 145 having a P-type |
| 7333172 |
Liquid crystal display device having plurality of conductive layers between a substrate and seal |
February 19, 2008 |
| The present invention related to unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically |
| 7333169 |
Electro-optical device and method of manufacturing the same |
February 19, 2008 |
| In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing |
| 7333160 |
Display device including resin film |
February 19, 2008 |
| An electronic device having an active matrix liquid crystal device comprising a sealing layer with a region overlapping an insulating film formed over another insulating film, which extends beyond said insulating film and forms on a peripheral switching device, a region in contact with |
| 7329906 |
Semiconductor device and method for forming the same |
February 12, 2008 |
| A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitrogen oxide atmosphere |
| 7301211 |
Method of forming an oxide film |
November 27, 2007 |
| A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere. compr |
| 7298447 |
Liquid crystal display panel |
November 20, 2007 |
| A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted fr |
| 7286173 |
Image sensor and image sensor integrated type active matrix type display device |
October 23, 2007 |
| To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel elect |
| 7265811 |
Integral-type liquid crystal panel with image sensor function |
September 4, 2007 |
| A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent, is provided and a method of manufacturing the sa |
| 7259738 |
Liquid crystal display device |
August 21, 2007 |
| A liquid crystal display device includes a display part divided into blocks, a gate driver which sequentially drives scan lines arranged in the display part one by one, and a data driver which supplies, via common signal lines, display signals to pixels connected to one of the scan l |
| 7235828 |
Semiconductor device with residual nickel from crystallization of semiconductor film |
June 26, 2007 |
| It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor.A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon |
| 7235814 |
Active matrix display device and method of manufacturing the same |
June 26, 2007 |
| In an active matrix display device integrated with peripheral drive circuits, an image sensor is provided on the same substrate as a pixel matrix and peripheral drive circuits. The image sensor is formed on the substrate having pixel electrodes, pixel TFTs connected to the pixel elec |
| 7215402 |
Electronic device having liquid crystal display device |
May 8, 2007 |
| A display device includes a pair of substrates sandwiching a liquid crystal with a thin film transistor formed over one of the pair of substrates and a sealing material formed between the pair of substrates for sealing the liquid crystal. The thin film transistor includes a semicondu |
| 7206053 |
Electro-optical device |
April 17, 2007 |
| An auxiliary capacitor for a pixel of an active matrix type liquid crystal display is provided without decreasing the aperture ratio. A transparent conductive film for a common electrode is formed under a pixel electrode constituted by a transparent conductive film with an insulation fil |
| 7196749 |
Liquid crystal display device and method for fabricating thereof |
March 27, 2007 |
| To provide a technology for fabricating a high image quality liquid crystal display device, a set range of a cell gap for holding a liquid crystal layer is limited in accordance with a distance of a pixel pitch in which specifically, the cell gap is set to be a distance of one tenth |
| 7190420 |
Display device |
March 13, 2007 |
| A metal electrode also serving as a black matrix is so formed as to cover the periphery of an IT0 pixel electrode. A region where the pixel electrode and the metal electrode coextend also serves as an auxiliary capacitor. Since the auxiliary capacitor can be formed by using a thin in |
| 7183614 |
Semiconductor device and method of manufacture thereof |
February 27, 2007 |
| There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurit |
| 7176495 |
Optical sensor |
February 13, 2007 |
| Disposing the light absorption layer formed in contact with a polycrystal silicon layer of a bottom gate type polycrystal silicon TFT allows a depletion layer formed between drain and channel forming regions to extend further into the inside of the light absorption layer, resulting i |
| 7169657 |
Process for laser processing and apparatus for use in the same |
January 30, 2007 |
| A process for laser processing an article which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination |
| 7166503 |
Method of manufacturing a TFT with laser irradiation |
January 23, 2007 |
| In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode |
| 7160792 |
Laser processing method |
January 9, 2007 |
| In an annealing process of illuminating a semiconductor thin film with laser light, in the case where the laser illumination is performed at an energy level that is lower than an output energy range that allows a laser apparatus to operate most stably, the laser output is fixed somew |
| 7158199 |
Liquid crystal display apparatus containing image sensor and process for producing the same |
January 2, 2007 |
| A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part |
| 7148542 |
Semiconductor device and method of forming the same |
December 12, 2006 |
| An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi- |
| 7148506 |
Active matrix display and electrooptical device |
December 12, 2006 |
| A liquid crystal device having a source line over a substrate, a gate line over the substrate, and a plurality of pixels or a pixel electrode over the substrate. A plurality of pixels may be arranged in a matrix array at intersections of source lines and gate lines. Each of a plurality o |
| 7148094 |
Semiconductor device and method for its preparation |
December 12, 2006 |
| A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method f |
| 7145613 |
Electronic device and method for fabricating the same |
December 5, 2006 |
| An electronic device having a long life and high quality pixel unit, said electronic device comprising a plurality of active elements, an insulator layer which covers the plurality of active elements, and a pixel region having placed thereon a plurality of pixel electrodes and being form |
| 7142273 |
Liquid crystal display panel with a laminating structure containing a semiconductor layer locate |
November 28, 2006 |
| A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted fr |
| 7110059 |
Display device |
September 19, 2006 |
| A metal electrode also serving as a black matrix is so formed as to cover the periphery of an ITO pixel electrode. A region where the pixel electrode and the metal electrode coextend also serves as an auxiliary capacitor. Since the auxiliary capacitor can be formed by using a thin in |
| 7109108 |
Method for manufacturing semiconductor device having metal silicide |
September 19, 2006 |
| A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate cont |
| 7102164 |
Semiconductor device having a conductive layer with a light shielding part |
September 5, 2006 |
| A semiconductor device having a substrate: a semiconductor film having at least two impurity regions, and at least one channel forming region; a gate insulating film; a gate electrode; an interlayer insulating film having an organic resin; a first conductive layer connected with one of |
| 7095478 |
Liquid crystal display device and method for fabricating thereof |
August 22, 2006 |
| To provide a technology for fabricating a high image quality liquid crystal display device, a set range of a cell gap for holding a liquid crystal layer is limited in accordance with a distance of a pixel pitch in which specifically, the cell gap is set to be a distance of one tenth |
| 7071912 |
Display panel drive circuit and display panel |
July 4, 2006 |
| A display panel drive circuit and a display panel are provided which are simple in structure but free from initial failure leading to impossibility to perform scanning. The display panel drive circuit of the present invention is structured such that thin film transistors constituting |
| 7057677 |
Electro-optical device and manufacturing method thereof |
June 6, 2006 |
| To suppress the occurrence of a failure caused by static electricity in the manufacturing process of an active matrix type display device in which an active matrix circuit and peripheral drive circuits are integrated on a glass substrate, a protective capacitor to be connected to a s |
| 7056775 |
Semiconductor device and process for fabricating the same |
June 6, 2006 |
| After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area |
| 7046313 |
Semiconductor device including a source line formed on interlayer insulating film having flatten |
May 16, 2006 |
| The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode |
| 7046282 |
Image sensor and image sensor integrated type active matrix type display device |
May 16, 2006 |
| To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel elect |
| 7042548 |
Image sensor having thin film transistor and photoelectric conversion element |
May 9, 2006 |
| A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent is provided and a method of manufacturing the sam |
