| Patent Number |
Title Of Patent |
Date Issued |
| 7368369 |
Method for activating P-type semiconductor layer |
May 6, 2008 |
| A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source inc |
| 6853012 |
AlGaInP light emitting diode |
February 8, 2005 |
| An AlGaInP light emitting diode with improved illumination is provided. The AlGaInP light emitting diode includes a semiconductor substrate, a light re-emitting layer, an AlGaInP layer with a first doping concentration, an AlGaInP lower cladding layer with a second doping concentration l |
| 6555405 |
Method for forming a semiconductor device having a metal substrate |
April 29, 2003 |
| The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes providing at least one semiconductor substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metal substrate on the semiconductor |
| 6468824 |
Method for forming a semiconductor device having a metallic substrate |
October 22, 2002 |
| The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconduct |
| 6445007 |
Light emitting diodes with spreading and improving light emitting area |
September 3, 2002 |
| The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first |
