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Chun Chun Yeh Patents
Inventor:
Yeh; Chun Chun
Address:
Hsin-Chu, TW
No. of patents:
1
Patents:




Patent Number Title Of Patent Date Issued
6784077 Shallow trench isolation process August 31, 2004
A method of forming a silicon oxide, shallow trench isolation (STI) region, featuring a silicon rich, silicon oxide layer used to protect the STI region from a subsequent wet etch procedure, has been developed. The method features depositing a silicon oxide layer via PECVD procedures,


 
 
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