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Kazutaka Yanagita Patents
Inventor:
Yanagita; Kazutaka
Address:
Ibaraki, JP
No. of patents:
42
Patents:




Patent Number Title Of Patent Date Issued
7351670 Method for producing silicon nitride films and process for fabricating semiconductor devices usi April 1, 2008
Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH.sub.2Cl.sub.2, SiCl.sub.4, Si.sub.2Cl.sub.6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH.sub.3NH.sub.2) and ammonia (NH.sub.3) as the nitrogen
7017830 Method and apparatus for separating sample March 28, 2006
This invention is to improve the reproducibility and yield in separating a bonded substrate stack. A bonded substrate stack having a porous layer inside is held by substrate holding portions 105 and 106, and a fluid is injected from a nozzle to the porous layer of the bonded substrate st
6979629 Method and apparatus for processing composite member December 27, 2005
A detection apparatus for detecting a feature portion of a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second member. The composite member has, as the feature portion, a portion at which a peripheral ed
6971432 Sample processing system December 6, 2005
This invention is to provide a processing system suitable for manufacturing an SOI substrate. A processing system includes a scalar robot for conveying a bonded substrate stack held by a robot hand, and a centering apparatus, separating apparatus, inverting apparatus, and cleaning/drying
6946052 Separating apparatus and processing method for plate member September 20, 2005
This invention is to guarantee that in separating a plate member such as a bonded substrate stack, a fluid is injected to an appropriate portion of the plate member. While a bonded substrate stack (50) is rotated, the vertical position of its peripheral portion is measured throughout its
6946046 Method and apparatus for separating member September 20, 2005
This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a first nozzle which forms a jet with a large width and a second nozzle which forms a jet with a small width. W
6900114 Separating apparatus, separating method, and method of manufacturing semiconductor substrate May 31, 2005
When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the pe
6867110 Separating apparatus and processing method for plate member March 15, 2005
This invention is to guarantee that in separating a plate member such as a bonded substrate stack, a fluid is injected to an appropriate portion of the plate member. While a bonded substrate stack (50) is rotated, the vertical position of its peripheral portion is measured throughout its
6860963 Sample separating apparatus and method, and substrate manufacturing method March 1, 2005
This invention is to provide an apparatus for separating a substrate having a porous layer at the porous layer. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (120, 150) while being rotated. High-speed, high-pressure water (jet) is
6852187 Method and apparatus for separating member February 8, 2005
This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a first nozzle which forms a jet with a large width and a second nozzle which forms a jet with a small width. W
6833312 Plate member separating apparatus and method December 21, 2004
This invention is to support a plate member such as a bonded substrate stack in a horizontal state without coming into contact with one surface of the member and also to efficiently progress separation. Separation is executed while arranging a bonded substrate stack (50) generated by
6825099 Method and apparatus for separating member November 30, 2004
This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a position adjusting mechanism (140) for adjusting the position of a nozzle (120) which ejects a fluid. A b
6773534 Sample processing apparatus and method August 10, 2004
This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous
6767840 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication met July 27, 2004
An ultrasonic bath (30) is arranged below a wafer processing bath (10). Wafers (40) are processed while ultrasonic waves are transmitted from the ultrasonic bath (30) to the wafer processing bath (10). The wafers (40) are processed while being entirely dipped into the wafer processing ba
6746559 Method and apparatus for separating composite member using fluid June 8, 2004
To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.
6712288 Method and apparatus for separating sample March 30, 2004
This invention is to improve the reproducibility and yield in separating a bonded substrate stack. A bonded substrate stack having a porous layer inside is held by substrate holding portions 105 and 106, and a fluid is injected from a nozzle to the porous layer of the bonded substrate st
6672358 Sample processing system January 6, 2004
This invention is to provide a processing system suitable for manufacturing an SOI substrate. A processing system includes a scalar robot for conveying a bonded substrate stack held by a robot hand, and a centering apparatus, separating apparatus, inverting apparatus, and cleaning/drying
6653206 Method and apparatus for processing composite member November 25, 2003
A method of processing a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second member. The composite member has a projecting portion at which a peripheral edge of the first member projects outside a pe
6653205 Composite member separating method, thin film manufacturing method, and composite member separat November 25, 2003
This invention relates to a composite member separating method in which a first member (1) having a separation layer (4) and a transfer layer (5) on the separation layer (4) is bonded to a second member (2) is separated at a position different from the bonding interface between the first
6629539 Sample processing system October 7, 2003
This invention is to provide a processing system suitable for manufacturing, e.g., an SOI substrate. A processing system includes a turntable on which holding mechanisms for holding bonded substrate stacks are mounted at a substantially equal angular interval, a driving mechanism for
6624047 Substrate and method of manufacturing the same September 23, 2003
In a method of manufacturing a bonded substrate stack by bonding a first substrate having a porous layer to a second substrate to prepare a bonded substrate stack, and separating the bonded substrate stack into two substrates at the porous layer, defects in the separation step are pr
6609553 Sample processing apparatus and method August 26, 2003
This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous
6609446 Separating apparatus, separating method, and method of manufacturing semiconductor substrate August 26, 2003
When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the pe
6605518 Method of separating composite member and process for producing thin film August 12, 2003
To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane stress has concentratedly been
6597039 Composite member, its separation method, and preparation method of semiconductor substrate by ut July 22, 2003
A composite member containing a separation area inside. A mechanical strength of the separation area is non-uniform along a surface of the composite member or along a bonded face. A mechanical strength of a peripheral portion of the separation area is locally low.
6540861 Member separating apparatus and processing apparatus April 1, 2003
This invention is to prevent a substrate from dropping when it is transferred/received to/from a separating apparatus. The support surfaces of substrate holding portions (22, 23) are made horizontal, and a substrate (21) to be separated is mounted on one substrate holding portion (22
6527031 Sample separating apparatus and method, and substrate manufacturing method March 4, 2003
This invention is to provide a technique of separating bonded substrate stacks having porous layers at a high yield. A separating apparatus (100) has a pair of substrate holding portions (270, 280). A bonded substrate stack (50) is sandwiched from upper and lower sides and horizontally h
6521078 Sample separating apparatus and method, and substrate manufacturing method February 18, 2003
This invention is to provide an apparatus for separating a substrate having a porous layer at the porous layer. A bonded substrate stack (101) having a porous layer (10b) is supported by substrate holding portions (120, 150) while being rotated. High-speed, high-pressure water (jet) is e
6475323 Method and apparatus for separating composite member using fluid November 5, 2002
To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.
6436226 Object separating apparatus and method, and method of manufacturing semiconductor substrate August 20, 2002
An apparatus for separating a substrate having a porous layer at the porous layer is provided. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (108, 109) while being rotated. High-speed, high-pressure water (jet) is ejected from a no
6427748 Sample processing apparatus and method August 6, 2002
This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous
6427747 Apparatus and method of separating sample and substrate fabrication method August 6, 2002
An apparatus for separating a substrate having a porous layer from the porous layer is provided. A bonded substrate stack having a porous layer is supported by substrate holders while being rotated. A jet nozzle ejects a high-speed, high-pressure liquid or water. The jet thrusts into the
6426270 Substrate processing method and method of manufacturing semiconductor substrate July 30, 2002
In a method of bonding first and second substrates to prepare a bonded substrate stack and then separating the bonded substrate stack at a porous layer to manufacture an SOI substrate, planarization of the first substrate after separation and reuse of the first substrate are facilita
6418999 Sample separating apparatus and method, and substrate manufacturing method July 16, 2002
This invention is to provide an apparatus for separating a substrate having a porous layer at the porous layer. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (120, 150) while being rotated. High-speed, high-pressure water (jet) is
6391743 Method and apparatus for producing photoelectric conversion device May 21, 2002
There is disclosed a method of producing a photoelectric conversion device comprising the steps of forming a semiconductor substrate comprising a first and a second semiconductor layers with a separation layer therebetween; bonding a support substrate to a surface of the second semic
6391067 Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication m May 21, 2002
A holder driving mechanism holds a wafer holder with gripping portions, and swings it within a wafer processing bath. When the peripheral portion of a wafer comes into contact with the distal end portion of a swing support member, the wafer rotates and vertically moves in the wafer holde
6382292 Method and apparatus for separating composite member using fluid May 7, 2002
To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.
6380099 Porous region removing method and semiconductor substrate manufacturing method April 30, 2002
A given planarity of the underlying layer is ensured after removal of a porous layer. In the first step, a porous layer is filled with a preprocess solution (e.g., water). In the second step, the preprocess solution filling the porous layer is replaced with an etchant (e.g., fluoric
6376332 Composite member and separating method therefor, bonded substrate stack and separating method th April 23, 2002
A bonded substrate stack formed by bonding first and second substrates is appropriately separated. A first substrate having a porous layer inside and a single-crystal Si layer and insulating layer on the porous layer is brought into tight contact with a second substrate while shifting th
6342433 Composite member its separation method and preparation method of semiconductor substrate by util January 29, 2002
In order to separate first and second base substrate without cracking them, and use a damaged base substrate again as a semiconductor substrate to enhance a yield, there is disclosed a preparation method of a semiconductor substrate comprising the steps of separating a composite memb
6199563 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication met March 13, 2001
An ultrasonic bath (30) is arranged below a wafer processing bath (10). Wafers (40) are processed while ultrasonic waves are transmitted from the ultrasonic bath (30) to the wafer processing bath (10). The wafers (40) are processed while being entirely dipped into the wafer processing ba
6127281 Porous region removing method and semiconductor substrate manufacturing method October 3, 2000
This invention is to ensure a high planarity of an underlying layer after a porous layer is removed. A substrate to be processed is dipped in an etchant. In the first step, pores in the porous Si layer are filled with the etchant by supplying an ultrasonic wave. In the second step, suppl


 
 
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