A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an
A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of opening
The dimension ratio t/H of the thickness t of a flexure spring to the height (thickness) H of a slider 17 is set at 0.047 or less in order to reduce the variation in crown amount due to a temperature variation. As the ratio of the thickness t of the flexure spring to the height H of the
