| Patent Number |
Title Of Patent |
Date Issued |
| D450070 |
Sputtering chamber coil |
November 6, 2001 |
|
| D440582 |
Sputtering chamber coil |
April 17, 2001 |
|
| 7381639 |
Method of depositing a metal seed layer on semiconductor substrates |
June 3, 2008 |
| We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A |
| 7318406 |
Bowl-in-piston of a cylinder in a direct injection engine |
January 15, 2008 |
| A piston in a direct injection spark ignition internal combustion engine is configured to reciprocate upward and downward within a combustion chamber along a reciprocating axis. The piston comprises an upper end which partly defines the combustion chamber; a bowl defined on the upper |
| 7294574 |
Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement |
November 13, 2007 |
| An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sp |
| 7253109 |
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
August 7, 2007 |
| We have discovered a method of providing a thin, approximately from about 2 .ANG. to about 100 .ANG. thick Ta.sub.N seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the Ta.sub.N seed layer. Further, the Ta.sub.N seed layer exhibits l |
| 7074714 |
Method of depositing a metal seed layer on semiconductor substrates |
July 11, 2006 |
| We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A |
| 7048837 |
End point detection for sputtering and resputtering |
May 23, 2006 |
| Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while a |
| 7025971 |
Treatment or prophylaxis of diseases caused by pilus-forming bacteria |
April 11, 2006 |
| Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is dimi |
| 7006888 |
Semiconductor wafer preheating |
February 28, 2006 |
| Embodiments of the present invention provide a method, article of manufacture, and apparatus for processing semiconductor wafers. The method includes preheating a semiconductor wafer in two types of chambers. In one embodiment, a first preheating chamber is a load lock and a second p |
| 6991709 |
Multi-step magnetron sputtering process |
January 31, 2006 |
| A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means |
| 6962791 |
Treatment or prophylaxis of diseases caused by pilus-forming bacteria |
November 8, 2005 |
| Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is diminish |
| 6960284 |
Rotational and reciprocal radial movement of a sputtering magnetron |
November 1, 2005 |
| A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly |
| 6919275 |
Method of preventing diffusion of copper through a tantalum-comprising barrier layer |
July 19, 2005 |
| We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A fir |
| 6875321 |
Auxiliary magnet array in conjunction with magnetron sputtering |
April 5, 2005 |
| An array of auxiliary magnets is disclosed that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker out |
| 6872542 |
Treatment or prophylaxis of diseases caused by pilus-forming bacteria |
March 29, 2005 |
| Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is diminish |
| 6787006 |
Operating a magnetron sputter reactor in two modes |
September 7, 2004 |
| A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means |
| 6783639 |
Coils for generating a plasma and for sputtering |
August 31, 2004 |
| A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a ta |
| 6758947 |
Damage-free sculptured coating deposition |
July 6, 2004 |
| We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A fir |
| 6692617 |
Sustained self-sputtering reactor having an increased density plasma |
February 17, 2004 |
| A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly |
| 6672864 |
Method and apparatus for processing substrates in a system having high and low pressure areas |
January 6, 2004 |
| A positive pressure gradient is maintained across an open access port of an interface chamber such as a load lock chamber which provides an interface between a low pressure chamber such as a transfer or buffer chamber, and a high pressure area such as a staging area or factory interface |
| 6660134 |
Feedthrough overlap coil |
December 9, 2003 |
| A coil for inductively coupling RF energy to a plasma in a substrate processing chamber has adjacent spaced and circumferentially overlapping RF feedthroughs adjacent to overlapping ends to improve uniformity of processing of the substrate. |
| 6610184 |
Magnet array in conjunction with rotating magnetron for plasma sputtering |
August 26, 2003 |
| An array of auxiliary magnets is disclosed that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker out |
| 6599399 |
Sputtering method to generate ionized metal plasma using electron beams and magnetic field |
July 29, 2003 |
| A deposition system in a semiconductor fabrication system provides at least one electron gun which injects energetic electrons into a semiconductor fabrication chamber to initiate and sustain a relatively high density plasma at extremely low pressures. In addition to ionizing atoms of th |
| 6596504 |
Treatment of prophylaxis of diseases caused by pilus-forming bacteria |
July 22, 2003 |
| Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is diminish |
| 6548265 |
Treatment or prophylaxis of diseases caused by pilus-forming bacteria |
April 15, 2003 |
| Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is diminish |
| 6547934 |
Reduction of metal oxide in a dual frequency etch chamber |
April 15, 2003 |
| The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls |
| 6514390 |
Method to eliminate coil sputtering in an ICP source |
February 4, 2003 |
| A magnetic shield to reduce sputtering of an RF coil for a plasma chamber in a semiconductor fabrication system is provided. The magnetic shield also reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece. |
| 6485618 |
Integrated copper fill process |
November 26, 2002 |
| A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrate |
| 6451179 |
Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an in |
September 17, 2002 |
| Increased sidewall coverage in a wetting layer for a substrate via or trench is achieved in an inductively coupled plasma chamber by sputtering relatively pure aluminum. |
| 6451177 |
Vault shaped target and magnetron operable in two sputtering modes |
September 17, 2002 |
| A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. Preferably, |
| 6449525 |
Computer system to control multiple step ionized metal plasma deposition process for conformal s |
September 10, 2002 |
| A multiple step process sputter deposits material of uniform thickness on stepped surfaces of an integrated circuit substrate such as the surfaces of a high aspect ratio via or a narrow trench. Material is first sputter deposited at the bottom of the opening at high pressure using a high |
| 6420127 |
Compounds and pharmaceutical compositions for the treatment and prophylaxis of bacterial infecti |
July 16, 2002 |
| Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is diminish |
| 6413382 |
Pulsed sputtering with a small rotating magnetron |
July 2, 2002 |
| A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during |
| 6409890 |
Method and apparatus for forming a uniform layer on a workpiece during sputtering |
June 25, 2002 |
| Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the |
| 6399479 |
Processes to improve electroplating fill |
June 4, 2002 |
| The invention provides a method for filling a structure on a substrate comprising: depositing a barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, removing a portion of the seed layer, and electrochemically depositing a metal to fi |
| 6387695 |
DNA pharmaceutical formulations comprising citrate or triethanolamine and combinations thereof |
May 14, 2002 |
| The present invention relates to nucleic acid formulations of pharmaceutical products which comprise citrate and/or triethanolamine in concentrations which enhance stability of the nucleic acid. These formulations are suited for situations where prolonged storage occurs during the di |
| 6372633 |
Method and apparatus for forming metal interconnects |
April 16, 2002 |
| The present invention provides a method and apparatus for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to |
| 6368469 |
Coils for generating a plasma and for sputtering |
April 9, 2002 |
| A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a ta |
| 6313027 |
Method for low thermal budget metal filling and planarization of contacts vias and trenches |
November 6, 2001 |
| The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, thro |
| 6277249 |
Integrated process for copper via filling using a magnetron and target producing highly energeti |
August 21, 2001 |
| A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For examp |
| 6274008 |
Integrated process for copper via filling |
August 14, 2001 |
| A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrate |
| 6254746 |
Recessed coil for generating a plasma |
July 3, 2001 |
| A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece. |
| 6238803 |
Titanium nitride barrier layers |
May 29, 2001 |
| Improved titanium nitride barrier layers are formed by depositing a first titanium layer; treating this layer with an oxygen plasma to form an oxygen-containing titanium layer thereover; depositing a titanium nitride layer over the oxygen-containing titanium layer; and treating the titan |
| 6238533 |
Integrated PVD system for aluminum hole filling using ionized metal adhesion layer |
May 29, 2001 |
| A hole filling process for an integrated circuit in which two wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tr |
| 6238528 |
Plasma density modulator for improved plasma density uniformity and thickness uniformity in an i |
May 29, 2001 |
| A plasma chamber in a semiconductor fabrication system improves the uniformity of a high density plasma by optimizing a ratio of RF power from a first coil, surrounding and inductively coupled into the high density plasma, to RF power from a second coil, positioned above a central region |
| 6235169 |
Modulated power for ionized metal plasma deposition |
May 22, 2001 |
| In a plasma generating apparatus, RF energy applied to a coil positioned to sputter material onto a workpiece, is modulated to control the biasing of the coil. As a consequence, control of coil sputtering may be improved such that the uniformity of deposition may also be improved. |
| 6232665 |
Silicon-doped titanium wetting layer for aluminum plug |
May 15, 2001 |
| A process for fabricating metal plugs, such as aluminum plugs, in a semiconductor workpiece. The invention is suitable for filling narrow, high aspect ratio holes, and the invention minimizes the formation of TiAl.sub.3 or other products of interdiffusion between the plug and the wet |
| 6231725 |
Apparatus for sputtering material onto a workpiece with the aid of a plasma |
May 15, 2001 |
| An apparatus for sputtering material onto a workpiece, composed of: a chamber; a first target disposed in the chamber for sputtering material onto the workpiece; a holder for holding the workpiece in the chamber; a plasma generation area between the target and the holder; a coil for |
| 6217721 |
Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically |
April 17, 2001 |
| An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also usefull for forming interconnects that are highly resistant to electromigration. A liner or barrier layer is first deposited by a high-de |
