| |
 |
Weize Xiong Patents |
|
Inventor: Xiong; Weize
Address: Austin, TX
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7253043 |
Short channel semiconductor device fabrication |
August 7, 2007 |
| The formation of one or more accumulation mode multi gate transistor devices is disclosed. The devices are formed so that short channel effects are mitigated. In particular, one more types of dopant materials are implanted in a channel region, an extension region and/or source/drain |
| 7238567 |
System and method for integrating low schottky barrier metal source/drain |
July 3, 2007 |
| According to one embodiment of the invention, a method for integrating low Schottky barrier metal source/drain includes providing a substrate, forming an epitaxial SiGe layer outwardly from the substrate, forming an epitaxial Si layer outwardly from the SiGe layer, and forming a metal |
| 7094650 |
Gate electrode for FinFET device |
August 22, 2006 |
| In a method of forming a semiconductor device, a self-planarizing conductive layer is formed over a substrate that includes a topography having sharp drop-offs. The self-planarizing conductive layer is characterized by a substantially flatter surface than the underlying topography. A |
|
|
|
