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Xinyua Xia Patents |
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Inventor: Xia; Xinyua
Address: San Jose, CA
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7208425 |
Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
April 24, 2007 |
| Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-f |
| 7037859 |
Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
May 2, 2006 |
| Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-f |
| 6905940 |
Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
June 14, 2005 |
| Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filli |
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