| Patent Number |
Title Of Patent |
Date Issued |
| 7371677 |
Laterally grown nanotubes and method of formation |
May 13, 2008 |
| A semiconductor device has lateral conductors or traces that are formed of nanotubes such as carbon. A sacrificial layer is formed overlying the substrate. A dielectric layer is formed overlying the sacrificial layer. A lateral opening is formed by removing a portion of the dielectric la |
| 7335602 |
Charge-free layer by layer etching of dielectrics |
February 26, 2008 |
| A method for etching a dielectric film is provided herein. In accordance with the method, a device (201) is provided which comprises a first chamber (203) equipped with a first gas supply (209) and a second chamber (205) equipped with a second gas supply (215), wherein the second chamber |
| 7279433 |
Deposition and patterning of boron nitride nanotube ILD |
October 9, 2007 |
| A method for forming a dielectric layer is disclosed herein. In accordance with the method, a first material is provided (303) which comprises a suspension of nanoparticles in a liquid medium. A dielectric layer is then formed (305) on the substrate from the suspension through an eva |
| 6969568 |
Method for etching a quartz layer in a photoresistless semiconductor mask |
November 29, 2005 |
| A chromeless phase lithography mask (30) that does not require photoresist to manufacture has a quartz substrate (32) is etched by using a plasma (38) containing one of a nitrogen augmented hydro-fluorocarbon oxygen mixture and a nitrogen augmented fluorocarbon oxygen mixture. Various |
| 6500315 |
Method and apparatus for forming a layer on a substrate |
December 31, 2002 |
| A method and an apparatus for forming a layer on a substrate are disclosed. In accordance with one embodiment, a substrate (901) is placed into a chamber (30) that includes a coil (16) and a shield (14) wherein the coil and the shield are electrically isolated by an isolation/support mem |
| 6139696 |
Method and apparatus for forming a layer on a substrate |
October 31, 2000 |
| A method and an apparatus for forming a layer on a substrate are disclosed. In accordance with one embodiment, a substrate (901) is placed into a chamber (30) that includes a coil (16) and a shield (14) wherein the coil and the shield are electrically isolated by an isolation/support mem |
