| Patent Number |
Title Of Patent |
Date Issued |
| 7387989 |
Al.sub.xGa.sub.yIn.sub.l-x-yN substrate, cleaning method of Al.sub.xGa.sub.yIn.sub.l-x-yN substr |
June 17, 2008 |
| An Al.sub.xGa.sub.yIn.sub.1-x-yN substrate in which particles having a grain size of at least 0.2 .mu.m on a surface of the Al.sub.xGa.sub.yIn.sub.1-x-yN substrate are at most 20 in number when a diameter of the Al.sub.xGa.sub.yIn.sub.1-x-yN substrate is two inches, and a cleaning me |
| 6805808 |
Method for separating chips from diamond wafer |
October 19, 2004 |
| A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during |
| 6717009 |
Method for making high-purity naphthalenedicarboxylic acid |
April 6, 2004 |
| A high-purity naphthalenedicarboxylic acid is produced by a method including Steps [1] and [2]: In Step [I], a raw mixture of crude terephthalic acid and crude naphthalenedicarboxylic acid is dissolved into high-temperature high-pressure water to form a dibasic acid solution wherein |
| 6661152 |
Diamond substrate for surface acoustic wave device, and surface acoustic wave device |
December 9, 2003 |
| A diamond film is deposited in the thickness of 20 .mu.m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including |
| 6525235 |
Method for manufacturing 2,6-dimethylnaphthalene |
February 25, 2003 |
| The present invention provides a method for manufacturing a highly pure 2,6-dimethylnaphthalene having a purity of 99% or more even when a mixture of dimethylnaphthalene isomers containing 5 wt % or more of 2,7-dimethylnaphthalate is used as a feedstock. The method for manufacturing |
| 6448688 |
Hard carbon film and surface-acoustic-wave substrate |
September 10, 2002 |
| The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film com |
| 6416865 |
Hard carbon film and surface acoustic-wave substrate |
July 9, 2002 |
| The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film com |
| 6356006 |
Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device |
March 12, 2002 |
| Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser |
| 6320296 |
Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device |
November 20, 2001 |
| Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser |
| 6210780 |
Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device |
April 3, 2001 |
| Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser |
| 5959389 |
Diamond-ZnO surface acoustic wave device |
September 28, 1999 |
| A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and whe |
