| Patent Number |
Title Of Patent |
Date Issued |
| 7375825 |
Light intensity ratio adjustment filter for an interferometer, interferometer, and light interfe |
May 20, 2008 |
| The light intensity ratio adjustment filter is placed between the reference surface and the sample surface of the interferometer. This light intensity ratio adjustment filter has a light intensity ratio adjustment film including an optical reflection-absorption layer and a dielectric |
| 7366218 |
Vertical cavity surface emitting laser diode and process for producing the same |
April 29, 2008 |
| A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a |
| 7352787 |
Vertical cavity surface emitting laser diode and process for producing the same |
April 1, 2008 |
| A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a |
| 7346089 |
Surface-emitting laser diode with tunnel junction and fabrication method thereof |
March 18, 2008 |
| A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the f |
| 7342666 |
Method and apparatus for measuring holding distortion |
March 11, 2008 |
| There are carried out a first measurement operation for measuring the shape of a front surface of a sample held in a held state, a second measurement operation for measuring the shape of a back surface of the sample held in the same state, and a third measurement operation for measur |
| 7340962 |
Method and device for holding subject and measuring instrument equipped with the device |
March 11, 2008 |
| A subject having a test surface is held by a holder so that an axis line of the test surface intersects the direction of gravity and applied with a load, from above and beneath, that is optimized for accurate measurement of surface profile of the test surface. For optimization of the |
| 7336688 |
Surface emitting semiconductor laser and method of manufacturing the same |
February 26, 2008 |
| A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer including at least Ga, In and P, an active region formed on the first semiconductor multiple |
| 7233400 |
Interferometer for measuring virtual contact surfaces |
June 19, 2007 |
| The light source is a low-coherence light source, and the optical path is regulated so that the reflected light from the upper surface of each metal wire and that from the reference surface interfere with each other during the first measuring operation, and so that the reflected light |
| 7141441 |
Surface emitting semiconductor laser and manufacturing method thereof |
November 28, 2006 |
| There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semicondu |
| 7058104 |
Surface emitting semiconductor laser and method of fabricating the same |
June 6, 2006 |
| A surface emitting semiconductor laser includes a substrate, a laser portion having a first post construction that is provided on the substrate and has a contact region on a top surface thereof, and an electrode portion having a second post construction provided on the substrate. The |
| 6992779 |
Interferometer apparatus for both low and high coherence measurement and method thereof |
January 31, 2006 |
| A Fizeau interferometer apparatus is used for both low and high interference measurement. When irradiating a reference surface and a sample with a low coherent luminous flux, a path-matching passage divides the low coherent luminous flux into first and second paths, while the optical |
| 6990128 |
Surface emitting semiconductor laser and manufacturing method thereof |
January 24, 2006 |
| There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semicondu |
| 6985605 |
Phase unwrapping method for fringe image analysis |
January 10, 2006 |
| In a phase unwrapping method for fringe image analysis, when storing newly calculated numeric data into a storage list, the new numeric data is initially compared with numeric data of a representative rank within each rank block in the storage list, whereby the rank block to store the da |
| 6912055 |
Spherical form measuring and analyzing method |
June 28, 2005 |
| Respective regional form information items obtained from regional interference fringe images corresponding to partial regions of a spherical surface to be inspected are transformed into regional synthesis form information items corresponding to a common coordinate system set for aper |
| 6867871 |
Moire grating noise eliminating method |
March 15, 2005 |
| A moving distance of a moire grating in y direction is set with respect to a grating pitch of a moire grating, whereas an imaging magnification of imaging means is set according to the relationship between the pixel pitch of an image pickup device in the imaging means and the size of gra |
| 6816527 |
Surface emitting semiconductor laser |
November 9, 2004 |
| A surface emitting semiconductor laser includes a substrate on which a resonator is formed, the resonator including a lower reflection mirror, an active region, and an upper reflection mirror, a metal layer that is provided on the upper reflection mirror and has a first aperture that |
| 6744523 |
Imaging optical system for oblique incidence interferometer |
June 1, 2004 |
| An imaging optical system for an oblique incidence interferometer comprises first and second optical systems and an intermediate imaging surface therebetween. Each of the first and second imaging optical systems comprises two telecentric lenses, arranged afocal to each other, having |
| 6650683 |
Surface emitting semiconductor laser |
November 18, 2003 |
| The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contr |
| 6636542 |
Surface emitting semiconductor laser, surface emitting semiconductor laser array, and method for |
October 21, 2003 |
| A surface emitting semiconductor laser and a method for manufacturing a surface emitting semiconductor laser array which are capable of controlling the polarization plane of a laser beam in constant direction and obtaining a low threshold current are provided. The surface emitting se |
| 6529541 |
Surface emitting semiconductor laser |
March 4, 2003 |
| A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer |
| 6483860 |
Surface emitting semiconductor laser with oxidized post structure |
November 19, 2002 |
| The present invention provides a surface emitting semiconductor laser that, with a relatively simple construction, can control the polarization of laser beam to a given direction and obtain a low threshold current and high output. Also, the present invention provides a laser array that h |
| 6320893 |
Surface emitting semiconductor laser |
November 20, 2001 |
| A surface emitting semiconductor laser having the stable transverse mode, reduced threshold current, and high output is provided. The surface emitting semiconductor laser has a structure that top and bottom spacer layers are formed on both sides of an active layer and top and bottom |
| 6018990 |
Flatness measuring and analyzing method |
February 1, 2000 |
| While the three-flat method is used as background art, a technique for analyzing the difference between two planes by approximating it with symmetry power series polynomials are employed, and measurement is effected at two positions where the reference surface and the sample surface |
| 5990494 |
Optoelectro transducer array, and light-emitting device array and fabrication process thereof |
November 23, 1999 |
| Described is an optical equipment using a semiconductor light emitting device array which has light emitting points formed thereon at a high density and has highly reliability. The optical equipment according to the present invention features that it is equipped with a light emitting |
| 5963242 |
Image recording apparatus with an array light source |
October 5, 1999 |
| An image recording apparatus has an array light source having a plurality of light-emitting elements arrayed in a predetermined density; a photosensitive member exposed to light beams emitted from the plural light-emitting elements so that images are recorded by fixing a traveling pa |
| 5880766 |
Apparatus for correcting positional deviation of light source emitting light beams in image reco |
March 9, 1999 |
| An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the phot |
| 5809052 |
Semiconductor laser array driving method, semiconductor laser array driving device and image for |
September 15, 1998 |
| A semiconductor laser array driving method for driving a semiconductor laser array having a plurality of light-emitting points arranged on a base member. The semiconductor laser array driving method has a step of driving the plurality of light-emitting points by a driving pulse current o |
| 5648295 |
Method of making a semiconductor laser device |
July 15, 1997 |
| A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the |
| 5588016 |
Semiconductor laser device |
December 24, 1996 |
| A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the |
| 5563901 |
Semiconductor laser array |
October 8, 1996 |
| In a semiconductor laser array in which a semiconductor laser element having a horizontal-direction cavity, and plural outer inclined reflecting mirrors capable of reflecting laser light projected from the semiconductor laser element along a specific direction are integrated on a semicon |
| 5533042 |
Semiconductor laser device and driving method for the same as well as tracking servo system empl |
July 2, 1996 |
| A semiconductor laser device which allows high speed correction of the position of a laser spot on an optical disk is disclosed. The semiconductor laser device comprises an active layer which oscillates a laser beam when electric current is supplied thereto, and a plurality of indepe |
| 5491709 |
Semiconductor laser device |
February 13, 1996 |
| In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active laye |
| 5394425 |
Method of manufacturing a semiconductor laser device |
February 28, 1995 |
| The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; |
| 5253265 |
Semiconductor laser device |
October 12, 1993 |
| A semiconductor laser device having an active layer which is comprised of a quantum well layer formed of a mixed crystal material, and barrier layers provided on both sides of the quantum well layer in such a manner as to sandwich the same, is characterized in that Ge is thermally diffus |
