| Patent Number |
Title Of Patent |
Date Issued |
| 6342710 |
Semiconductor integrated circuit |
January 29, 2002 |
| A semiconductor integrated circuit, particularly a circuit for a high-speed low-power-consumption table look-aside buffer mounted in a microprocessor LSI. The semiconductor integrated circuit is provided with field effect transistors for comparing inputted multibit data signals with stor |
| 6121646 |
Semiconductor integrated circuit |
September 19, 2000 |
| A semiconductor integrated circuit, particularly a circuit for a high-speed low-power-consumption table look-aside buffer mounted in a microprocessor LSI. The semiconductor integrated circuit is provided with field effect transistors for comparing inputted multibit data signals with stor |
| 5391501 |
Method for manufacturing integrated circuits with a step for replacing defective circuit element |
February 21, 1995 |
| A method for manufacturing a semiconductor integrated circuit device is described. The method comprises forming a plurality of macrocells each comprising a semiconductor integrated circuit on a semiconductor layer of an SOI (silicon on insulator) substrate, subjecting an insulating film |
| 4675983 |
Method of making a semiconductor including forming graft/extrinsic and intrinsic base regions |
June 30, 1987 |
| An impurity-doped region that serves as an intrinsic base region of a bipolar transistor is formed in a very early stage, and an electrode for taking out the base and a graft base region are formed in a late stage. This makes it possible to reliably connect the intrinsic base region and |
| 4640721 |
Method of forming bipolar transistors with graft base regions |
February 3, 1987 |
| After an end part of a polycrystalline silicon film has been oxidized from an exposed side surface thereof, a silicon dioxide film formed is removed, and an opening thus provided is used for diffusing an impurity into a semiconductor substrate so as to form a graft base region.This measu |
| 4362599 |
Method for making semiconductor device |
December 7, 1982 |
| A semiconductor device prepared by forming a silicon substrate of one conductor type having a surface of the (100) crystal plane, opening a rectangular window having sides parallel to the <100> crystal axis, etching the interior of the rectangular window with an anisotropic etching |
| 4278987 |
Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientat |
July 14, 1981 |
| A semiconductor device prepared by forming a silicon substrate of one conductor type having a surface of the (100) crystal plane, opening a rectangular window having sides parallel to the <100> crystal axis, etching the interior of the rectangular window with an anisotropic etching |
| 3977920 |
Method of fabricating semiconductor device using at least two sorts of insulating films differen |
August 31, 1976 |
| A lateral transistor or the like is made by the steps of forming a first insulating layer on a semiconductor substrate and providing a first hole in this insulating layer so as to expose a first surface portion of the substrate. An impurity of a first conductivity type is introduced thro |
