| Patent Number |
Title Of Patent |
Date Issued |
| 7031612 |
Optical transponders and transceivers |
April 18, 2006 |
| An optical transponder/transceiver for intermediate range (e.g., 10-50 km) optical communication applications utilizes an electroabsorption modulated laser for the transmitting device. Preferably, the laser operations at a wavelength of approximately 1310 nm and comprises an electroa |
| 6597718 |
Electroabsorption-modulated fabry perot laser |
July 22, 2003 |
| An electroabsorption modulated laser (EML) is formed to include a Fabry-Perot lasing section, in place of the conventional DFB lasing section. When operated at a wavelength of 1310 nm, the wider spectral bandwidth of the FP device (containing several longitudinal modes) is of no conc |
| 6108362 |
Broadband tunable semiconductor laser source |
August 22, 2000 |
| A tunable semiconductor laser comprises a gain section having an MQW active region, a uniform pitch grating DFB region, and first waveguide. A composite reflector, including a second MQW region and a second waveguide, forms a cavity resonator with the DFB region. A voltage applied to the |
| 5834792 |
Articles comprising doped semiconductor material |
November 10, 1998 |
| The disclosed novel doping method makes it possible to tailor the effective activation energy of a dopant species in semiconductor material. The method involves formation of very thin layers of .delta.-doped second semiconductor material in first semiconductor material, with the second |
| 5606573 |
Method and apparatus for control of lasing wavelength in distributed feedback lasers |
February 25, 1997 |
| A method and apparatus for control of lasing wavelength in distributed feedback lasers using an improved waveguide. The waveguide comprises a periodic structure or grating and an active stripe which is oriented at a nonzero angle .THETA. with respect to a line perpendicular to the lines |
| 5548607 |
Article comprising an integrated laser/modulator combination |
August 20, 1996 |
| The disclosed integrated modulator/laser (I-MOD/DFB) combination comprises an active region that extends the full length of the combination without variation of layer thickness and/or composition. Because of this constancy of the active region parameters the relevant bandgap energy is th |
| 5440575 |
Article comprising a semiconductor laser with stble facet coating |
August 8, 1995 |
| Disclosed are high reliability semiconductor lasers that need not be maintained inside a hermetic enclosure. Such lasers can advantageously be used in a variety of applications, e.g., in optical fiber telecommunications, and in compact disc players. Such "non-hermetic" lasers compris |
| 5407531 |
Method of fabricating a compound semiconductor device |
April 18, 1995 |
| A device fabrication method includes an etching step for compound III/V semiconductor materials such as gallium arsenide or indium phosphide. The step is carried out in the chamber of a growth reactor under conditions that are compatible with a subsequent growth step performed in the sam |
| 5346581 |
Method of making a compound semiconductor device |
September 13, 1994 |
| In a preferred embodiment, the disclosed method of making a compound semiconductor (e.g., InP, GaAs) device comprises etching of a semiconductor body by exposure of the body to a chemical beam or beams that comprise an etching medium (e.g., PCl.sub.3, AsCl.sub.3) and a precursor chem |
| 5224113 |
Semiconductor laser having reduced temperature dependence |
June 29, 1993 |
| In accordance with the present invention a semiconductor laser is provided with a cavity having decreasing loss with increasing wavelength in order to reduce temperature dependence. Such decreasing loss canbe obtained by providing the laser cavity with reflecting means or gratings which |
| 5208824 |
Article comprising a DFB semiconductor laser |
May 4, 1993 |
| DFB lasers with advantageously structured grating region are disclosed. The grating region comprises one or more thin semiconductor layers (to be referred to as "QWs"), with the QWs varying periodically in the longitudinal direction of the laser. In an exemplary preferred embodiment |
| 5153693 |
Circuit including bistable, bipolar transistor |
October 6, 1992 |
| A bipolar transistor which is inherently bistable, is disclosed. This bipolar transistor has a structure such that the corresponding band diagram includes a first potential barrier within the collector, at or adjacent the base-collector interface. In addition, the band diagram also i |
| 5115294 |
Optoelectronic integrated circuit |
May 19, 1992 |
| A new MSM photodetector, including a photoabsorbing layer of ternary or quaternary III-V compound semiconductor material, is disclosed. This new photodetector is significant because it exhibits a relatively small dark current and a correspondingly large signal-to-noise ratio. Moreover, t |
| 4831628 |
Denices fabricated using method of selective area epitaxial growth using ion beams |
May 16, 1989 |
| A method of selective area epitaxial growth using a scanning ion beam is described. |
| 4785454 |
Stabilized cleaved-coupled cavity laser |
November 15, 1988 |
| A light transmitter comprising a cleaved-coupled cavity laser and stabilization means to maintain the laser in single longitudinal mode operation is described. ' |
| 4784967 |
Method for fabricating a field-effect transistor with a self-aligned gate |
November 15, 1988 |
| A method of fabricating a field-effect transistor is disclosed wherein only two masking steps are used in the development of the device. The semiconductor wafer used in the process has a non-alloyed contact at its top surface, that is, a contact which does not require alloying temper |
| 4780748 |
Field-effect transistor having a delta-doped ohmic contact |
October 25, 1988 |
| A field-effect transistor is created on a GaAs semi-insulating substrate using molecular beam epitaxy by fabricating a delta-doped monolayer with a silicon dopant between two undoped GaAs layers grown over the semi-insulating substrate. A plurality of delta-doped monolayers are grown |
| 4772934 |
Delta-doped ohmic metal to semiconductor contacts |
September 20, 1988 |
| A non-alloyed ohmic contact in gallium arsenide is described wherein a plurality of delta-doped monolayers are placed at a predetermined distance from each other and from the metal to semiconductor interface of the contact. The predetermined distance is chosen to keep the tunneling b |
| 4737960 |
Rare earth doped semiconductor laser |
April 12, 1988 |
| A solid state laser is disclosed wherein a semiconductor active layer is arranged in a Fabry-Perot cavity and the active layer is doped with a rare earth ion having a dominant emission wavelength. The proportion of elements for the compound active layer is chosen such that the bandgap |
| 4734380 |
Multicavity optical device held together by metallic film |
March 29, 1988 |
| Semiconductor lasers having cleaved optically coupled cavities operating electrically isolated produce output of a single longitudinal mode. Wavelength tuning of the single longitudinal mode is possible. |
| 4694318 |
Sawtooth photodetector |
September 15, 1987 |
| A structure having a sawtooth graded bandgap region between two layers having the same conductivity type is useful as a photodetector. |
| 4636268 |
Chemical beam deposition method utilizing alkyl compounds in a carrier gas |
January 13, 1987 |
| Epitaxial layers of semiconductor materials such as, e.g., III-V and II-VI materials are deposited on a substrate under high-vacuum conditions. Molecules of a compound of a constituent of such material travel essentially line-of-sight towards the substrate admixed to a carrier gas su |
| 4627065 |
Double active layer semiconductor laser |
December 2, 1986 |
| A double active layer semiconductor laser having single longitudinal mode operation is described. The laser comprises first and second active layers which are separated from each other by an intermediate barrier layer but are optically coupled to each other so that, effectively, single m |
| 4622673 |
Heteroepitaxial ridge overgrown laser |
November 11, 1986 |
| A ridge waveguide laser with the ridge being grown through a stripe opened in an oxide layer covering one of the cladding layers is described. In one embodiment, the cladding layer is corrugated and the ridge waveguide laser is a distributed feedback laser. |
| 4622671 |
Multicavity optical device |
November 11, 1986 |
| Semiconductor lasers having cleaved optically coupled cavities operating electrically isolated produce output of a single longitudinal mode. Wavelength tuning of the single longitudinal mode is possible. |
| 4622093 |
Method of selective area epitaxial growth using ion beams |
November 11, 1986 |
| A method of selective area epitaxial growth using a scanning ion beam is described. |
| 4602370 |
Large optical cavity laser having a plurality of active layers |
July 22, 1986 |
| A large optical cavity injection laser having a plurality of active layers within the large optical cavity. The active layers having a thickness great enough so that quantum effects are not significant. |
| 4599632 |
Photodetector with graded bandgap region |
July 8, 1986 |
| A photodetector having a graded bandgap region is an ultrahigh speed photodetector when operated at zero bias. |
| 4575919 |
Method of making heteroepitaxial ridge overgrown laser |
March 18, 1986 |
| A method of making a ridge waveguide laser with the ridge being grown through a stripe opened in an oxide layer covering one of the cladding layers is described. In one embodiment, the cladding layer is corrugated and the ridge waveguide laser is a distributed feedback laser. |
| 4564946 |
Optical communications system using frequency shift keying |
January 14, 1986 |
| Frequency shift keying optical communications devices using a cleaved coupled cavity laser are described. The cleaved coupled cavity laser comprises first and second laser diode sections which are mutually optically coupled to each other and means for adjusting the refractive index o |
| 4512022 |
Semiconductor laser having graded index waveguide |
April 16, 1985 |
| A semiconductor laser having a graded index waveguide layer has low current thresholds. |
| 4476477 |
Graded bandgap multilayer avalanche photodetector with energy step backs |
October 9, 1984 |
| A multistage avalanche photodetector in which the ionization energy is provided by an energy band discontinuity is described. The photodetector provides low noise optical detection at low voltage. |
| 4464342 |
Molecular beam epitaxy apparatus for handling phosphorus |
August 7, 1984 |
| Molecular beam epitaxy apparatus that permits a cryo-panel on which high vapor pressure material has condensed to be removed from the growth chamber to an outgassing chamber permits the high vapor pressure material, such as phosphorus, to be easily used in growing compound semiconductor |
| 4464211 |
Method for selective area growth by liquid phase epitaxy |
August 7, 1984 |
| A lateral selective area liquid phase epitaxy method useful for the fabrication of, for example, a double barrier buried heterostructure laser, is described. |
| 4438446 |
Double barrier double heterostructure laser |
March 20, 1984 |
| A double barrier double heterostructure laser is described in which relatively narrow beam divergence is obtained by the presence of wide bandgap, with respect to the cladding layers and barrier layers intermediate the active and cladding layers. |
| 4435809 |
Passively mode locked laser having a saturable absorber |
March 6, 1984 |
| A region of saturable absorption is produced in semiconductor lasers by proton bombardment and results in subpicosecond optical pulses. |
| 4291327 |
MOS Devices |
September 22, 1981 |
| An oxide layer (16') is formed on a GaAs body (14) by epitaxially growing a layer (12) of Al.sub.x Ga.sub.1-x As layer on a major surface (18) of the body and then thermally oxidizing the Al.sub.x Ga.sub.1-x As layer for a time period effective to convert it to an oxide. The oxidizing pr |
| 4282541 |
Planar P-I-N photodetectors |
August 4, 1981 |
| A light transducer (10) is described in which a semi-insulating, single crystal body (12) of light-absorbing semiconductor material has a pair of spaced-apart epitaxial zones (14, 16) of opposite conductivity type integrally and electrically coupled to a surface (18) of the body. The |
| 4269635 |
Strip buried heterostructure laser |
May 26, 1981 |
| A double heterostructure laser having a pair of opposite-conductivity-type, wide bandgap cladding layers separated by a narrower bandgap active region is characterized in that the active region includes a low-loss waveguide layer and contiguous therewith a narrower bandgap active layer i |
| 4264916 |
Semiconductor barrier Josephson junction |
April 28, 1981 |
| A semiconductor barrier Josephson junction device (10) comprises a semiconductor body (12) having a pair of parallel noncoplanar major surfaces (14, 16) which are joined along parallel edges (18, 20) by an oblique surface (22) which forms an acute angle with the major surfaces. Super |
| 4236122 |
Mesa devices fabricated on channeled substrates |
November 25, 1980 |
| Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top |
| 4216036 |
Self-terminating thermal oxidation of Al-containing group III-V compound layers |
August 5, 1980 |
| An oxide layer (16') is formed on a GaAs body (14) by epitaxially growing a layer (12) of Al.sub.x Ga.sub.1-x As layer on a major surface (18) of the body and then thermally oxidizing the Al.sub.x Ga.sub.1-x As layer for a time period effective to convert it to an oxide. The oxidizing pr |
| 4194933 |
Method for fabricating junction lasers having lateral current confinement |
March 25, 1980 |
| Described is a method for fabricating a stripe geometry double heterostructure (DH) junction laser in which lateral current confinement is acheived by pairs of laterally spaced, reverse-biased p-n junctions. A mesa is formed on an n-GaAs substrate, for example, and a layer of p-AlGaA |
| 4190813 |
Strip buried heterostructure laser |
February 26, 1980 |
| A double heterostructure laser having a pair of opposite-conductivity-type, wide bandgap cladding layers separated by a narrower bandgap active region is characterized in that the active region includes a low-loss waveguide layer and contiguous therewith a narrower bandgap active layer i |
| 4169997 |
Lateral current confinement in junction lasers |
October 2, 1979 |
| Described is a stripe geometry double heterostructure (DH) junction laser in which lateral current confinement is achieved by pairs of laterally spaced, reverse-biased p-n junctions. A mesa is formed on an n-GaAs substrate, for example, and a layer of p-AlGaAs is then grown by LPE so |
| 4099305 |
Fabrication of mesa devices by MBE growth over channeled substrates |
July 11, 1978 |
| Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top |
| 4011574 |
Junction arrays for superconducting and nonsuperconducting application |
March 8, 1977 |
| An article and method for fabricating one and two dimensional arrays of superconducting and normal junctions by depositing metal films on photoresist gratings. In one mode superconducting Josephson junction arrays of the Dayem bridge type are fabricated by scratching a groove across |
