| Patent Number |
Title Of Patent |
Date Issued |
| 7160749 |
Method and structure for eliminating polarization instability in laterally--oxidized VCSELs |
January 9, 2007 |
| The polarization instability inherent in laterally-oxidized VCSELs may be mitigated by employing an appropriately-shaped device aperture, a misoriented substrate, one or more cavities or employing the shaped device aperture together with a misoriented substrate and/or cavities. The l |
| 7138648 |
Ultraviolet group III-nitride-based quantum well laser diodes |
November 21, 2006 |
| A pair of undoped spacer layers are provided adjacent to, or near to, a single quantum well aluminum gallium nitride active region. In various exemplary embodiments, the undoped spacer layers are provided between the single quantum well aluminum gallium nitride active region and carrier |
| 6750120 |
Method and apparatus for MOCVD growth of compounds including GaAsN alloys using an ammonia precu |
June 15, 2004 |
| A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation of introducing ammonia with an agent to assist in the breakdown of the ammonia into a reaction chamber with the GaAs film. Agents that are described include radiation as wel |
| 6621844 |
Buried oxide photonic device with large contact and precise aperture |
September 16, 2003 |
| A photonic device includes a plurality of semi-conductor layers formed on a substrate. The semi-conductor layers include an active layer and a current controlling region in close proximity to the active layer. The current controlling region includes a relatively small electrically conduc |
| 6304588 |
Method and structure for eliminating polarization instability in laterally-oxidized VCSELs |
October 16, 2001 |
| The polarization instability inherent in laterally-oxidized VCSELs may be mitigated by employing an appropriately-shaped device aperture, a misoriented substrate, one or more cavities or employing the shaped device aperture together with a misoriented substrate and/or cavities. The l |
| 5832019 |
Index guided semiconductor laser biode with shallow selective IILD |
November 3, 1998 |
| An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of GaInP and AlGaInP heterostructures. In some embodiments, prior to the IILD, wing regions flanking an active mesa region are etched down close to the active layer so that the selective IILD |
| 5766981 |
Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD |
June 16, 1998 |
| Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided |
| 5412678 |
Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers |
May 2, 1995 |
| A QW diode laser generating orthogonally polarized multiple beams. The device incorporates quantum well active regions capable of, transitions to heavy hole and light hole band edges. The heavy hole transition provides TE-mode gain, while the light hole band provides mostly TM-mode gain. |
| 5396508 |
Polarization switchable quantum well laser |
March 7, 1995 |
| A QW diode laser whose polarization can be switched. In one embodiment, the device incorporates a tensile strained quantum well active region, whose thickness is adjusted so that the heavy hole and light hole band edges are of the same energy. Since the heavy hole transition provides TE- |
| 5379312 |
Semiconductor laser with tensile-strained etch-stop layer |
January 3, 1995 |
| Ridged waveguide and selectively-buried ridged waveguide, index-guided, visible semiconductor lasers incorporating a lattice-mismatched, preferably tensile-strained, etch-stop layer in the design and fabrication of the laser. Compared with other structures with etch-stop layers that |
| 4962057 |
Method of in situ photo induced evaporation enhancement of compound thin films during or after e |
October 9, 1990 |
| In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished without breaking the growth system environment employing photo induced evaporation enhancement in chemical vapor deposition epitaxy. Intense radiation from an energy source desorbs or |
