| Patent Number |
Title Of Patent |
Date Issued |
| 4465967 |
Current supply circuit |
August 14, 1984 |
| A current supply circuit comprises a DC power feed circuit exhibiting a constant current characteristic for a power source and a constant resistance characteristic for a load, a first detecting circuit for detecting a load current or a load voltage, a DC-DC converter circuit inserted |
| 4315206 |
Current supply circuit for telephone exchange |
February 9, 1982 |
| A current supply circuit for a telephone exchange is disclosed in which a current-supplying current amplifier series-connected between a power supply and a load amplifys an output current of an input current supply circuit, and a driving current amplifier for driving the current-supplyin |
| 4277696 |
Semiconductor switch circuit |
July 7, 1981 |
| A semiconductor switch circuit comprises first, second and third transistors. The complementary first and second transistors make up an inverted Darlington circuit. The third transistor with the base and collector thereof connected to the collector and base of the inverted Darlington |
| 4232234 |
Semiconductor switch circuit |
November 4, 1980 |
| In a semiconductor switch circuit employing at least one 4-terminal PNPN switch having a cathode gate and an anode gate for switching an AC signal, a current supplying circuit is connected to the cathode gate of the PNPN switch, and a current sinking circuit of constant-current type is |
| 4125787 |
Semiconductor switch circuit |
November 14, 1978 |
| A semiconductor switch circuit comprises a PNPN switch with a PNPN semiconductor four-layered structure equivalently including first and second transistors and a gate terminal, a load current dividing circuit including at least one transistor, a variable impedance bypass circuit incl |
| 4112346 |
Constant current circuit |
September 5, 1978 |
| A constant current circuit includes two characteristic-correlated PNP transistors connected to a constant voltage source and having common-connected emitters and common-connected bases and an NPN transistor. A constant current is taken out of a collector of a first PNP transistor. A |
| 4058741 |
Semiconductor switch circuit |
November 15, 1977 |
| A semiconductor switch is composed of at least a 4-terminal PNPN switch. The cathode gate and the anode gate of the PNPN switch are connected to a current-supplying type constant-current circuit with a power supply for feeding a current into the cathode gate and to a current-sinking type |
| 4041332 |
Semiconductor switch device |
August 9, 1977 |
| A semiconductor switch device comprising a PNPN switch having an equivalent four-layer structure, a transistor, two impedance elements and a capacitive element, wherein the transistor and one of the impedance elements are connected in parallel with each other, the parallel circuit th |
| 4039865 |
Semiconductor switch |
August 2, 1977 |
| A semiconductor switch comprising a PNPN switch having an equivalently four-layer structure of p, n, p and n regions and three PN junctions; a transistor; two impedance elements and a capacitive element, wherein the transistor and one of the impedance elements is connected in parallel to |
| 4039864 |
Semiconductor bidirectional switch circuit |
August 2, 1977 |
| A semiconductor bidirectional switch circuit comprises a bidirectional switch including two thyristors connected in antiparallel relationship. A bypass circuit is connected to each of the two thyristors for bypassing a part of a main current flowing through the thyristor from the anode t |
| 4039863 |
Light activated semiconductor switch device |
August 2, 1977 |
| A light activated semiconductor switch device comprising a light activated PNPN switch, an impedance element, a switching element, and a capacitance element. The impedance element and switching element are connected in parallel across the cathode gate and the cathode or across the anode |
| 4015143 |
Semiconductor switch |
March 29, 1977 |
| A semiconductor switch large in dv/dt bearing capacity regardless of the anode or cathode potential, high in breakdown voltage, capable of being closed with a small control current, and easy to be included in semiconductor integrated circuits. The semiconductor switch according to th |
