| Patent Number |
Title Of Patent |
Date Issued |
| 7372067 |
Refractive index changing apparatus and method |
May 13, 2008 |
| Refractive index changing apparatus includes quantum dots each having discrete energy levels including ground level and excited level, the excited level being higher than the ground level even if energy due to ambient temperature is provided on the quantum dots, barrier structure uni |
| 7245576 |
Optical recording medium and optical recording-reproducing method |
July 17, 2007 |
| An optical recording medium includes an optical recording layer, a separating layer formed on a reproducing light incident side of the optical recording layer, and a phase-change reproducing layer formed on the reproducing light incident side of the separating layer, absorbance of wh |
| 7081328 |
Optical disk having super-resolution film |
July 25, 2006 |
| An optical disk from which recorded data are read out by means of light irradiation has a substrate having recording pits as data on a surface thereof, and stacked films formed on the substrate. The stacked films contain a super-resolution film of a polymer matrix and semiconductor p |
| 6738335 |
Optical recording medium, reproducing method, and reproducing apparatus |
May 18, 2004 |
| This invention provides an optical recording medium having a structure in which a plurality of recording layers are stacked, and a reproducing method and apparatus for the medium. As an interlayer interposed between first and second recording layers, this invention uses a layer which |
| 6002522 |
Optical functional element comprising photonic crystal |
December 14, 1999 |
| An optical functional element including two diffraction gratings having metal films formed on their surfaces, which are arranged to oppose each other to form a photonic band, and an optical functional film interposed between these diffraction gratings, the optical functional film consist |
| 5971276 |
Method of reading pattern and optical signal reader |
October 26, 1999 |
| A method of reading a pattern including steps of heating or irradiating with infrared light a substrate on which a transparent pattern is formed, the pattern containing a material capable of absorbing infrared light of specific wavelength such as polyacrylonitrile, and detecting infrared |
| 5937267 |
System, device and method for quantification of polychlorobiphenyls |
August 10, 1999 |
| The present invention is to clear the difficulty in determining the progress of the decomposition reaction of PCBs carried out by a conventional device for decomposing PCBs, and to provide a system for treating PCBs to render them harmless, capable of continuously determining the pro |
| 5858541 |
Glass composite material, precursor thereof, nitrogen-containing composite material and optical |
January 12, 1999 |
| A glass composite material comprising a polymer chain selected from the group consisting of polysilane, polygermane, polystannane and a copolymer thereof, and a network structure of a metal oxide consisting of a metal atom bonded to the other metal atom through an oxygen atom, wherein th |
| 5717051 |
Glass composite material, precursor thereof, nitrogen-containing composite material and optical |
February 10, 1998 |
| A glass composite material comprising a polymer chain selected from the group consisting of polysilane, polygermane, polystannane and a copolymer thereof, and a network structure of a metal oxide consisting of a metal atom bonded to the other metal atom through an oxygen atom, wherein th |
| 5694188 |
Reflection type liquid crystal display device having comb-shaped wall electrode |
December 2, 1997 |
| A liquid crystal display device comprises two substrates opposed to each other, a comb-shaped wall electrode formed to correspond to each pixel of an array defined by vertical and horizontal wires formed on the substrate, the comb-shaped wall electrode having a plurality of elemental ele |
| 5173440 |
Method of fabricating a semiconductor device by reducing the impurities |
December 22, 1992 |
| In fabricating a semiconductor device, when impurities are diffused from a silicon oxide layer containing the impurities to a semiconductor layer, a diffusion atmosphere is controlled so as to oxidize or reduce a specified impurity to thereby control the diffusion coefficient of the impu |
