| Patent Number |
Title Of Patent |
Date Issued |
| 7342715 |
Multilayer film reflector for soft X-rays and manufacturing method thereof |
March 11, 2008 |
| A multilayer film reflector for X-rays has alternately stacked layers formed on a substrate and comprising a layer (high refractive index layer) comprising a material having a large difference between a refractive index to soft X-ray and a refractive index in vacuum, and a layer (low |
| 7116473 |
Optical element with antireflection film |
October 3, 2006 |
| An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the ge |
| 7035000 |
Antireflection film and optical element having the same |
April 25, 2006 |
| An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the ge |
| 6947209 |
Antireflection film and optical element having the same |
September 20, 2005 |
| An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the ge |
| 6558507 |
Plasma processing apparatus |
May 6, 2003 |
| A plasma processing apparatus has a substrate holder, arranged in a vessel which can be reduced in pressure, for placing a substrate to be processed there on, a process gas fed into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequen |
| 6333079 |
Plasma CVD process |
December 25, 2001 |
| In a plasma CVD system comprises a reactor the inside of which can be evacuated, a substrate holding means provided in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying to a plasma-producin |
| 6279504 |
Plasma CVD system |
August 28, 2001 |
| A plasma CVD system has a reactor which can be evacuated, a substrate holding means in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying an electrode high-frequency power of 30 MHz to 600 |
| 6152071 |
High-frequency introducing means, plasma treatment apparatus, and plasma treatment method |
November 28, 2000 |
| A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a |
| 6145469 |
Plasma processing apparatus and processing method |
November 14, 2000 |
| A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for supplying a high-frequency wave pow |
