| Patent Number |
Title Of Patent |
Date Issued |
| 7410864 |
Trench and a trench capacitor and method for forming the same |
August 12, 2008 |
| A method for fabricating a trench includes providing a semiconductor substrate made of a semiconductor material. A trench is etched into a surface of the semiconductor substrate such that a trench wall is produced. At least one layer is provided on the trench wall. This step is perfo |
| 7368385 |
Method for producing a structure on the surface of a substrate |
May 6, 2008 |
| The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly |
| 7294902 |
Trench isolation having a self-adjusting surface seal and method for producing one such trench i |
November 13, 2007 |
| The invention relates to a trench isolation with a self-aligning surface sealing and a fabrication method for said surface sealing. In this case, the surface sealing may have an overlap region of the substrate surface or a receded region into which extends an electrically conductive laye |
| 7265025 |
Method for filling trench and relief geometries in semiconductor structures |
September 4, 2007 |
| A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high conformity and minimal roughness. A V etching reaching down to a predetermined depth of the |
| 7250336 |
Method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structu |
July 31, 2007 |
| The present invention provides a method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure, comprising the steps of: providing a trench in the microelectronic or micromechanical structure; providing a partial filling in the trench; providing a fir |
| 7223651 |
Dram memory cell with a trench capacitor and method for production thereof |
May 29, 2007 |
| A memory cell includes a selection transistor and a trench capacitor. The trench capacitor is filled with a conductive trench filling on which an insulating covering layer is arranged. The insulating covering layer is laterally overgrown, proceeding from the substrate with a selectively |
| 7152461 |
Method and apparatus for determination of the depth of depressions which are formed in a mount s |
December 26, 2006 |
| The invention relates to a method for determination of the depth of depressions which are formed in a mount substrate. According to the invention, an essentially uniform layer of a wetting agent is applied, which contains depressions, on a surface of the mount substrate, a time profi |
| 7119384 |
Field effect transistor and method for fabricating it |
October 10, 2006 |
| The invention relates to a field effect transistor in which the planar channel region on the upper surface of the elevation is extended in width by means of additional vertical channel regions on the lateral surfaces of the elevation. Said additional vertical channel regions connect |
| 7084029 |
Method for fabricating a hole trench storage capacitor in a semiconductor substrate, and hole tr |
August 1, 2006 |
| To fabricate a hole trench storage capacitor having an inner electrode, which is formed in a hole trench, and an outer electrode, which is formed in an electrode section, surrounding the hole trench in a lower section, of the semiconductor substrate, the inner electrode is continued abov |
| 7049647 |
Semiconductor memory cell with trench capacitor and selection transistor and method for fabricat |
May 23, 2006 |
| A semiconductor memory cell is formed in a substrate and includes a trench capacitor and a selection transistor. The trench capacitor includes a capacitor dielectric and a conductive trench filling. Disposed on the conductive trench filling is a diffusion barrier on which an epitaxial |
| 7012289 |
Memory cell having a thin insulation collar and memory module |
March 14, 2006 |
| A memory cell has a trench capacitor, in which the area required over a terminal area of the trench capacitor is advantageously reduced by the formation of a particularly thin insulation collar. The insulation collar is reduced to such an extent that although a lateral current is pre |
| 6989311 |
Method for fabricating a trench contact to a deep trench capacitor having a polysilicon filling |
January 24, 2006 |
| The instant invention is a method for fabricating a trench contact to a deep trench capacitor with a polysilicon filling in a trench hole formed in a silicon substrate. An epitaxy process is performed to selectively grow silicon above the polysilicon filling in the trench hole. An openin |
| 6924225 |
Method for producing an electrically conductive contact |
August 2, 2005 |
| An electrically conductive contact can be used to connect an integrated component to an interconnect. A sacrificial layer is deposited on a liner and planarized until a surface of the integrated component is uncovered. The sacrificial layer is patterned to define the later contacts. The |
| 6841443 |
Method for fabricating a deep trench capacitor for dynamic memory cells |
January 11, 2005 |
| A method for fabricating a deep trench capacitor for dynamic memory cells in which a trench is etched into the depth of a semiconductor substrate, and wherein the interior of the trench is provided with a doping and a dielectric and is filled with a conductive material as an inner electr |
| 6828192 |
Semiconductor memory cell and method for fabricating the memory cell |
December 7, 2004 |
| A trench capacitor is formed in a trench, which is disposed in a substrate. The trench is filled with a conductive trench filling which functions as an inner capacitor electrode. An epitaxial layer is grown on the sidewall of the trench on the substrate. A buried strap is disposed betwee |
| 6821863 |
Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor compone |
November 23, 2004 |
| A semiconductor component has a cavity formed in a monocrystalline silicon substrate. The wall of the cavity is covered by a cover layer, at least in an upper collar region, and a covering layer is then applied to the surface of the silicon substrate using a selective epitaxial growth |
| 6773983 |
Memory cell arrangement and method for its fabrication |
August 10, 2004 |
| The present invention relates to a memory cell arrangement and a fabrication method for this memory cell arrangement. In this case, the memory cells (15a, 15b, 15c) arranged regularly on a semiconductor wafer each have a trench capacitor (20a, 20b, 20c) formed in the semiconductor su |
| 6664167 |
Memory with trench capacitor and selection transistor and method for fabricating it |
December 16, 2003 |
| A memory having a memory cell formed in a substrate and including a trench capacitor and a transistor and a method for producing the memory includes connecting the trench capacitor to the transistor with a self-aligned connection. The transistor at least partly covers the trench capacito |
| 6590249 |
One-transistor memory cell configuration and method for its fabrication |
July 8, 2003 |
| In a method for fabricating a dynamic memory cell in a semiconductor substrate having a trench capacitor 1 and a selection transistor 2 and a semiconductor memory having such a memory cell, a dielectric insulator layer 17, 201 is formed between the selection transistor and the trench |
| 6326262 |
Method for fabricating epitaxy layer |
December 4, 2001 |
| A method of fabricating an epitaxial layer includes providing a substrate having a substrate surface with an at least partly uncovered monocrytalline region, and at least one electrically insulating region adjoining the monocrystalline region and being at least partly surrounded by t |
