| Patent Number |
Title Of Patent |
Date Issued |
| 7391800 |
Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optica |
June 24, 2008 |
| In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of s |
| 7384479 |
Laser diode having an active layer containing N and operable in a 0.6 .mu.m wavelength |
June 10, 2008 |
| An optical semiconductor device operable in a 0.6 .mu.m band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less. |
| 7376164 |
Vertical cavity surface emitting semiconductor laser, light emission device, and optical transmi |
May 20, 2008 |
| A semiconductor laser is disclosed with which a VCSEL can be constituted with a simplified configuration for optical transmission at a transmission rate higher than 10 Gbps. The semiconductor laser includes a resonator including a first active region able to emit light in response to |
| 7260137 |
Vertical-cavity surface-emission type laser diode and fabrication process thereof |
August 21, 2007 |
| A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided be |
| 7245647 |
Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommu |
July 17, 2007 |
| A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 .mu.m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer |
| 7235816 |
Semiconductor light emitter |
June 26, 2007 |
| A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together cons |
| 7230649 |
Image sensor system using CMOS image sensor and image sensor apparatus using CMOS image sensor |
June 12, 2007 |
| An image sensor such as the conventional CMOS image sensor, in which automatic controls including so-called automatic iris control and white balance adjustment for adjusting the sensor sensitivity, namely the charge accumulation time in each pixel, according to the brightness of the |
| 7209169 |
Imaging system using solid-state CMOS imaging device |
April 24, 2007 |
| Turning on and off of the light source illuminating an object to be imaged is judged based on brightness changes in small and large areas set up in the frame and an electric charge storage time for each pixel is set up to be equal to the turning-on-and-off period of the light source or a |
| 7201939 |
Optical fiber with antireflection coating, and method for manufacturing the same |
April 10, 2007 |
| An optical member (for example, optical fiber) is dipped in a coating solution having a film forming material dissolved therein to form an antireflection film on the end surface of the optical member. When the optical member is pulled up from the coating solution, the angle formed by |
| 7180100 |
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus ther |
February 20, 2007 |
| A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active |
| 7170825 |
Power reserve display mechanism and mechanical timepiece having the same |
January 30, 2007 |
| To provide a power reserve display mechanism having a mainspring remaining amount display showing a novel behavior and a mechanical timepiece having the same. A power reserve display mechanism of a mechanical timepiece includes a displacement conversion mechanism having a first rotation |
| 7139297 |
Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
November 21, 2006 |
| A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of |
| 7106661 |
Calendar timepiece |
September 12, 2006 |
| A calendar timepiece has a main plate, a time indicator mounted on the main plate for undergoing rotational movement to indicate time information, a date indicator mounted for undergoing rotation to indicate date information, and a date indicator driving wheel mounted on the main pla |
| 7067846 |
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus ther |
June 27, 2006 |
| A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active |
| 7029169 |
Chronograph timepiece having zeroing structure |
April 18, 2006 |
| To realize a chronograph timepiece capable of firmly and simultaneously zeroing an hour heart cam, a second heart cam and a minute heart cam. A chronograph timepiece of the invention includes a hammer operated by operating a reset button for controlling to operate to zero an hour chr |
| 7022539 |
Vertical-cavity, surface-emission type laser diode and fabrication process thereof |
April 4, 2006 |
| A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided be |
| 6983004 |
Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
January 3, 2006 |
| A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of |
| 6975663 |
Surface-emission laser diode operable in the wavelength band of 1.1-7.mu.m and optical telecommu |
December 13, 2005 |
| A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 .mu.m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer ha |
| 6974974 |
Light emitting devices with layered III -V semiconductor structures, and modules and systems for |
December 13, 2005 |
| A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in e |
| 6959025 |
Surface-emitting laser diode having reduced device resistance and capable of performing high out |
October 25, 2005 |
| A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second distributed Bragg reflecto |
| 6927412 |
Semiconductor light emitter |
August 9, 2005 |
| A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitu |
| 6890682 |
Structure for holding battery of electronic timepiece |
May 10, 2005 |
| A battery holding structure for an electronic timepiece has a battery frame having an opening for receiving a battery. The battery frame has a plurality of fittings each having a tapered overhang extending toward the opening for holding the battery in the opening. |
| 6884291 |
Laser diode having an active layer containing N and operable in a 0.6 .mu.m wavelength band |
April 26, 2005 |
| An optical semiconductor device operable in a 0.6 .mu.m band includes an active layer of GaInNP sandwiched by a pair of GaInP layers each having a thickness of about 2 molecular layers or less. |
| 6857267 |
Stirling cycle engine |
February 22, 2005 |
| The Stirling cycle engine includes: a casing having a cylindrical shape; a cylinder for sidably inserting a displacer and a piston into a part adjacent to one end and another part adjacent to an other end thereof respectively,_the cylinder being coaxially placed inside the casing; a |
| 6856631 |
Semiconductor device with saturable absorbing layer |
February 15, 2005 |
| A self-pulsating semiconductor laser device includes a semiconductor substrate of the first conductivity type, a first cladding layer of the first conductivity type formed on the substrate and an active layer formed on the first cladding layer. A second cladding layer of a second con |
| 6829271 |
Light-emitting semiconductor device producing red wavelength optical radiation |
December 7, 2004 |
| A light-emitting semiconductor device for producing red color optical radiation has a cladding layer of AlGaInPAs having a lattice constant between GaAs and GaP. Further, the laser diode uses an optical waveguide layer in the system of GaInPAs free from Al. The semiconductor device may |
| 6814483 |
Self-winding timepiece having train wheel setting apparatus |
November 9, 2004 |
| To provide a self-winding timepiece having a thin and small-sized movement in which a train wheel setting apparatus for setting a balance with hairspring is efficiently arranged at the movement. A self-winding timepiece includes a main plate, a time indicating wheel, a winding stem a |
| 6803604 |
Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emit |
October 12, 2004 |
| An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate. |
| 6765232 |
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus ther |
July 20, 2004 |
| A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active |
| 6678216 |
Timepiece using spring as power |
January 13, 2004 |
| To provide a power accumulation structure of a simple construction, in which a planetary mechanism is not used, for a timepiece using a spring as power. A power accumulation structure of a simple construction not using a planetary mechanism is a power accumulation structure using a threa |
| 6674785 |
Vertical-cavity, surface-emission type laser diode and fabrication process thereof |
January 6, 2004 |
| A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided be |
| 6657233 |
Light emitting devices with layered III-V semiconductor structures, and modules and systems for |
December 2, 2003 |
| A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in e |
| 6614821 |
Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
September 2, 2003 |
| A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of |
| 6563851 |
Laser diode having an active layer containing N and operable in a 0.6 .mu.m wavelength band |
May 13, 2003 |
| An optical semiconductor device operable in a 0.6 .mu.m band includes an active layer of GaInNP sandwiched by a pair of GaInP layers each having a thickness of about 2 molecular layers or less. |
| 6555608 |
White standard paint |
April 29, 2003 |
| A standard white paint with good weather resistance and improvement of reflectivity characteristics for UV as well as adhesion to the substrate is provided. The white standard paint of the present invention contains barium sulfate, binder and solvent in which Polyvinyl alcohol is used as |
| 6542528 |
Light-emitting semiconductor device producing red wavelength optical radiation |
April 1, 2003 |
| A light-emitting semiconductor device for producing red color optical radiation has a cladding layer of AlGaInPAs having a lattice constant between GaAs and GaP. Further, the laser diode uses an optical waveguide layer in the system of GaInPAs free from Al. The semiconductor device may |
| 6490231 |
Intermittent feeding mechanism |
December 3, 2002 |
| An intermittent feed mechanism has a counting wheel and a cam balancer mounted on the counting wheel and having a hole. A feed pawl is mounted on the cam balancer and has a spring portion and a pawl portion. The pawl portion of the feed pawl has a protrusion disposed in the hole of the c |
| 6476857 |
Multi-point monitor camera system |
November 5, 2002 |
| A multi-point surveillance camera system uses a combination of an image recognition unit a zoom camera equipped with a pan/tilt driver unit for changing a camera monitor position, to monitor a plurality of monitor positions. The monitor position is changed by using the pan/tilt unit, and |
| 6428201 |
Chronograph timepiece and lever device for timepiece |
August 6, 2002 |
| In a state in which a chronograph mechanism is not operated, a coupling lever 442 positions a second counting transmission pinion 212b such that the second counting transmission pinion 212b is separated from a second chronograph wheel 214. In a state in which the chronograph mechanism is |
| 6406176 |
Chronograph timepiece |
June 18, 2002 |
| A chronograph timepiece has a barrel mounted for undergoing rotation and a front train wheel for undergoing rotation in accordance with rotation of the barrel. A second counter intermediate wheel undergoes rotation in accordance with rotation of the front train wheel. A second counting w |
| 6391315 |
Vaccine for inhibiting and preventing induced staphylococcus infection, isolated antigens used t |
May 21, 2002 |
| An antigenic composition is derived from surface extracted protein of cell wall surfaces and the culture supernatant extract of Staphylococci. The strain is highly virulent and .beta. hemolytic on blood agar plate. They are mixed and purified by ion exchange and gel filtration column |
| 6343422 |
Tilt angel measuring device |
February 5, 2002 |
| The present invention provides a tilt angle measuring device comprising a glass container with a solution 11' and air bubble 12 sealed therein for measuring a tilt angle by detecting displacement of said air bubble 12, wherein said solution contains N-methylformamide and a solvent. |
| 6207973 |
Light emitting devices with layered III-V semiconductor structures |
March 27, 2001 |
| A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in e |
| 6067798 |
Turbocharger control apparatus and a control method of turbocharger with a variable nozzle |
May 30, 2000 |
| A turbocharger control apparatus has an exhaust turbine including an exhaust gas introducing port having a variable nozzle which can vary a passage area of the port by adjusting its opening degree, an engine load detection device which detects a load of an internal combustion engine, an |
| 6062025 |
Auxiliary brake system |
May 16, 2000 |
| An auxiliary brake system includes a turbocharger, including an exhaust turbine driven by exhaust gas supplied from an internal combustion engine, nozzle vanes disposed therearound at intervals for a vane-opening-degree adjustment, and an actuator for adjusting the vane opening degree; a |
| 6046770 |
Imaging apparatus |
April 4, 2000 |
| Smooth interlocking operation of an optical zooming device and an electronic zooming device are realized by storing an amount of mechanical play of the optical zooming device in a play memory and then calculating the amount of mechanical play of the optical zooming from both the stored |
| 5992376 |
Engine-brake assisting system |
November 30, 1999 |
| In an engine-brake assisting system comprising a hydraulic pressure producing unit, an exhaust valve driving unit and a hydraulic circuit member which are constructed as discrete elements, the hydraulic pressure producing unit produces a desired hydraulic pressure by rotating a camsh |
| 5959729 |
Automatic tilt angle compensator |
September 28, 1999 |
| An automatic tilt angle compensator, which comprises a sealed container for sealing at least two types of liquids to form a free interface, a light projecting system arranged to project a light beam through the free interface, an entry window for allowing the light beam to enter, ref |
| 5956294 |
Multi-functional timepiece |
September 21, 1999 |
| A multi-functional timepiece comprises a base, a wheel train mounted on the base for rotation, a cam member rotationally driven by the wheel train about a rotational center, and a rotary member mounted to undergo angular displacement in opposite directions. A display member is integrally |
| 5912066 |
Silicon nitride circuit board and producing method therefor |
June 15, 1999 |
| A silicon nitride circuit board comprises a silicon nitride substrate having oxide layers at surfaces thereof, and copper system circuit plates directly bonded to the silicon nitride substrate thorough the oxide layer by the use of the DBC (copper directly bonding) method. The oxide laye |
