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Aritoshi Sugimoto Patents
Inventor:
Sugimoto; Aritoshi
Address:
Tokyo, JP
No. of patents:
36
Patents:




Patent Number Title Of Patent Date Issued
7417444 Method and apparatus for inspecting integrated circuit pattern August 26, 2008
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while
7301146 Probe driving method, and probe apparatus November 27, 2007
A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) ap
7266235 Pattern inspection method and apparatus September 4, 2007
A pattern inspection method in which an image can be detected without an image detection error caused by an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/non-connection, and pattern edge formation. A digital image of an object substrate is
7260256 Method and system for inspecting a pattern August 21, 2007
The present invention relates to detection of defects with simple specification of the coordinates, in the inspection of an object having a plurality of patterns in which a portion having the two-dimensional repetition and portions having the repetition only in the X direction and in
7133550 Pattern inspection method and apparatus November 7, 2006
A pattern inspection method in which an image can be detected without an image detection error caused by an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/non-connection, and pattern edge formation. A digital image of an object substrate is
7122796 Electron beam inspection method and apparatus and semiconductor manufacturing method and its man October 17, 2006
An inspection method and apparatus includes control of an acceleration voltage of an electron beam, irradiation of the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, and detection of at least one of secondary elec
7026830 Method and apparatus for inspecting integrated circuit pattern April 11, 2006
To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current i
6970004 Apparatus for inspecting defects of devices and method of inspecting defects November 29, 2005
Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reli
6960765 Probe driving method, and probe apparatus November 1, 2005
A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow appearing
6944325 Inspecting method and apparatus for repeated micro-miniature patterns September 13, 2005
An apparatus for inspecting foreign matter in repeated micro-miniature patterns formed upon a surface of an object to be inspected, comprising: an inspection light illuminating device for irradiating an inspection light directed upon the surface of the object to be inspected, on which
6895346 Method for test conditions May 17, 2005
A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to t
6841405 Photomask for test wafers January 11, 2005
A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to t
6828554 Electron beam inspection method and apparatus and semiconductor manufacturing method and its man December 7, 2004
A method of detecting a defect includes of determining an image acquisition condition for irradiating a converged electron beam onto a specimen and detecting a secondary electron emanated from the specimen, acquiring an image by detecting the secondary electron emanated from the specimen
6780660 System for testing electronic devices August 24, 2004
A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to t
6771077 Method of testing electronic devices indicating short-circuit August 3, 2004
A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to t
6770496 Method of testing electronic devices August 3, 2004
A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to t
6760472 Identification method for an article using crystal defects July 6, 2004
A semiconductor substrate has a peculiar crystal defect. Crystal defects in a fixed area of a substrate can be treated as data acquired by coding the distribution of the crystal defects. The coded data is utilized for certificate data of an IC card by identifying a semiconductor substrat
6734687 Apparatus for detecting defect in device and method of detecting defect May 11, 2004
Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high relia
6717142 Electron beam inspection method and apparatus and semiconductor manufacturing method and its man April 6, 2004
An inspection method and apparatus includes control of an acceleration voltage of an electron beam, irradiation of the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, and detection of at least one of secondary electron
6703850 Method of inspecting circuit pattern and inspecting instrument March 9, 2004
In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection dev
6661912 Inspecting method and apparatus for repeated micro-miniature patterns December 9, 2003
An apparatus for inspecting foreign matter in repeated micro-miniature patterns formed upon a surface of an object to be inspected, comprising: an inspection light illuminating device for irradiating an inspection light directed upon the surface of the object to be inspected, on which
6583634 Method of inspecting circuit pattern and inspecting instrument June 24, 2003
In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection dev
6573546 Semiconductor integrated circuit device and process for manufacturing the same June 3, 2003
A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the
6559663 Method and apparatus for inspecting integrated circuit pattern May 6, 2003
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scan
6376854 Method of inspecting a pattern on a substrate April 23, 2002
A method for inspecting a pattern formed on a substrate, includes the steps of moving a table along a first direction on which a substrate to be inspected is mounted, irradiating a converged electron beam on the substrate by scanning the converged electron beam along a second direction
6373054 Electron beam inspection method and apparatus and semiconductor manufacturing method and its man April 16, 2002
An inspection method and apparatus which controls an acceleration voltage of an electron beam, irradiates the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, detects at least one of a secondary electron and a reflected
6365425 Method of manufacturing semiconductor device April 2, 2002
A method of manufacturing a semiconductor device includes fetching inspection chip information including information of a dust-particle/fault on an inspection chip by irradiating the inspection chip of a semiconductor wafer with an optical beam and by detecting the scattering/diffrac
6347150 Method and system for inspecting a pattern February 12, 2002
The present invention relates to detection of defects with simple specification of the coordinates, in the inspection of an object having a plurality of patterns in which a portion having the two-dimensional repetition and portions having the repetition only in the X direction and in
6329826 Method and apparatus for inspecting integrated circuit pattern December 11, 2001
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scan
6291847 Semiconductor integrated circuit device and process for manufacturing the same September 18, 2001
A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the
6236057 Method of inspecting pattern and apparatus thereof with a differential brightness image detectio May 22, 2001
A method and apparatus for inspecting a pattern, a first image of a first area on a sample is acquired by imaging the first area formed as a first pattern, and the first image is memorized. A second image of a second area on the sample is acquired by imaging the second area formed as a s
6172365 Electron beam inspection method and apparatus and semiconductor manufacturing method and its man January 9, 2001
An electron beam inspection method including the steps of irradiating an electron beam to an object to be inspected, detecting at least one of a secondary electron and a reflected electron emanated from the object by the irradiation of the electron beam, and obtaining an image of the obj
6172363 Method and apparatus for inspecting integrated circuit pattern January 9, 2001
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scan
6087673 Method of inspecting pattern and apparatus thereof July 11, 2000
In a method of inspecting a defect and an apparatus thereof, an allowable range for a gradation value of a difference image is determined for each pixel from one pixel or less of position shift quantity between two images to be compared, a variation rate in a local gradation value of an
5986263 Electron beam inspection method and apparatus and semiconductor manufacturing method and its man November 16, 1999
An electron beam inspection method and apparatus. The method includes controlling acceleration voltage of electron beam and electric field on a sample, beam current, beam diameter, image detection rate, image dimensions, precharge, discharge, or a combination of them, exposing an obj
5877498 Method and apparatus for X-ray analyses March 2, 1999
An X-ray analyzing method for inspecting opening states of fine holes comprises the steps of: irradiating a finely converged electron beam into a first fine hole, observing an X-ray emitted from the inside of said first fine hole in order to obtain an first X-ray analysis data about the


 
 
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