| Patent Number |
Title Of Patent |
Date Issued |
| 7283577 |
Radiation-emitting semiconductor component |
October 16, 2007 |
| A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of |
| 7195991 |
Method for producing an electromagnetic radiation-emitting semiconductor chip and a correspondin |
March 27, 2007 |
| In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer c |
| 7135709 |
Surface structured light-emitting diode with improved current coupling |
November 14, 2006 |
| Structured-surface light-emitting diode having a light generating layer and a relatively thick, transparent current-spreading layer, vertical structuring of the top surface of the current-spreading layer serves to improve the decoupling of light, while at the same time, a second elec |
| 7109527 |
Semiconductor chip for optoelectronics and method for production thereof |
September 19, 2006 |
| A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from the emission direction a |
| 7042013 |
Radiation-emitting semiconductor component |
May 9, 2006 |
| A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer (18), a p-doped cladding layer (20), and an active layer (14) based on InGaAlP arranged between the n-doped cladding layer (18) and the p-doped cladding layer (20). A diffus |
| 6995030 |
Semiconductor chip for optoelectronics |
February 7, 2006 |
| An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing |
| 6828597 |
Radiation-emitting semiconductor component |
December 7, 2004 |
| In a radiation-emitting semiconductor component having a semiconductor body that comprises a radiation-generating active layer, having a central front-side contact on a front side of the semiconductor body and a back-side contact on a back side of the semiconductor body for impressing |
| 6784027 |
Light-emitting semiconductor component |
August 31, 2004 |
| A light-emitting semiconductor component having: a semiconductor element containing an active layer, electrical contacts for impressing a current into the active layer (heat being generated at the active layer and at the electrical contacts during operation), and a carrier with a large t |
| 6668005 |
Pre-fusion oxidized and wafer-bonded vertical cavity laser |
December 23, 2003 |
| It was proposed to combine two successful VCL technologies, wafer fusion and selective oxidation, in a new way to form a long wavelength VCL. The Al(ga)As oxidation is performed via fusion channels before the actual wafer fusion step. By doing so, the structure combines the advantages of |
| 6607931 |
Method of producing an optically transparent substrate and method of producing a light-emitting |
August 19, 2003 |
| A light-emitting semiconductor chip is produced by applying an epitaxially produced light-emitting semiconductor structure on a transparent substrate. First, a substrate layer is epitaxially grown on a lattice-matched substrate. The substrate layer is bonded, on a side facing away fr |
