| Patent Number |
Title Of Patent |
Date Issued |
| H459 |
Synthesis of cadmium sulfide using the spontaneous reaction of dialkylcadmium and hydrogen sulfi |
April 5, 1988 |
| Cadmium sulfide is formed successfully from the reactants hydrogen sulfide md the representative dialkylcadmium, dimethylcadmium, spontaneously when mixed in the gas phase. Reactions are monitored using fourier transform infrared spectroscopy which also permits the identification of gaseo |
| H409 |
Synthesis of cadmium sulfide using the laser-induced reaction of dialkylcadmium and organosulfur |
January 5, 1988 |
| Cadmium sulfide is formed successfully from the laser-induced chemical reion between a first reactant of a dialkylcadmium and a second reactant of a dialkylsulfide. Infrared laser radiation in the range of 10.4 or 9.4 micrometers is provided by a continuous-wave CO.sub.2 laser. In singl |
| 4908110 |
Laser-induced nitration |
March 13, 1990 |
| Infrared laser-induced production of nitrated products is achieved by irradiating compounds selected from propane, n-butane, isobutane, n-pentane, and cyclopropane in the gas phase while in a stainless steel cell 5.times.5.times.10 cm equipped with zinc selenide windows to admit the |
| 4681640 |
Laser-induced chemical vapor deposition of germanium and doped-germanium films |
July 21, 1987 |
| Germanium and doped-germanium polycrystalline films are formed using photolytic CO.sub.2 laser-induced chemical vapor deposition method. Germanium being transparent to IR light makes the production of high purity polycrystalline germanium and doped-germanium films from starting compo |
| 4529489 |
Laser photochemical decomposition of compounds containing R--O--P moiety (chemical agents) |
July 16, 1985 |
| A CW tunable laser is employed in a laser photochemical decomposition met to achieve decomposition of a compound of high toxicity to relatively non-toxic decomposition products.Organophosphorus chemical agents containing a characteristic C--O--P group are irradiated with a predetermined |
