| Patent Number |
Title Of Patent |
Date Issued |
| 6872479 |
Coated optics to improve durability |
March 29, 2005 |
| The invention is directed to a coated metal fluoride crystals that are resistant to laser-induced damage by a below 250 nm UV laser beam; methods of making such coated crystals, and the use of such coated crystals. The method includes the steps of providing an uncoated metal fluoride cry |
| 6839374 |
Barium fluoride high repetition rate UV excimer laser |
January 4, 2005 |
| The invention relates to an excimer laser which includes a source of a laser beam and one or more windows which include barium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows which include barium fluoride |
| 6806039 |
Photolithographic element blank calcium strontium fluoride UV transmitting mixed fluoride crysta |
October 19, 2004 |
| The invention provides a UV below 200 nm lithography method utilizing mixed calcium strontium fluoride crystals. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed calcium strontium cubic fluoride crystal optica |
| 6801562 |
High repetition rate excimer laser system |
October 5, 2004 |
| The invention provides a .gtoreq.4 kHz repetition rate argon fluoride excimer laser system for producing an UV wavelength 193 nm output. The .gtoreq.4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber for producing a 193 nm discharge |
| 6768762 |
High repetition rate UV excimer laser |
July 27, 2004 |
| The invention relates to an High Repetition Rate UV Excimer Laser which includes a source of a laser beam and one or more windows which include magnesium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows whi |
| 6669920 |
Below 160NM optical lithography crystal materials and methods of making |
December 30, 2003 |
| The present invention provides below 160 nm optical lithography crystal materials for VUV optical lithography systems and processes. The invention provides fluoride optical lithography crystals for utilization in 157 nm optical microlithography elements which manipulate below 193 nm opti |
| 6649326 |
Photolithographic method and UV transmitting fluoride crystals with minimized spatial dispersion |
November 18, 2003 |
| The invention provides a UV below 200 nm lithography method. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed cubic fluoride crystal optical elements, with the fluoride crystals comprised of a combination of |
| 6630117 |
Making a dispersion managing crystal |
October 7, 2003 |
| The present invention provides fluoride lens crystals for VUV optical lithography systems and processes. The invention provides a barium fluoride optical lithography crystal for utilization in 157 nm optical microlithography elements which manipulate below 193 nm optical lithography |
| 5039858 |
Divalent fluoride doped cerium fluoride scintillator |
August 13, 1991 |
| The use of divalent fluoride dopants in scintillator materials comprising cerium fluoride is disclosed. The preferred divalent fluoride dopants are calcium fluoride, strontium fluoride, and barium fluoride. The preferred amount of divalent fluoride dopant is less than about two percent b |
