| Patent Number |
Title Of Patent |
Date Issued |
| 7375380 |
Semiconductor light emitting device |
May 20, 2008 |
| A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further i |
| 6983003 |
III-V nitride semiconductor laser device |
January 3, 2006 |
| A III-V nitride semiconductor laser device demonstrates an excellent emission characteristic without an increase in production cost. The refractive index of a p-side optical guiding layer is larger than that of an n-side guide layer. |
| 6693303 |
Nitride semiconductor device and method for manufacturing the same |
February 17, 2004 |
| A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap than that of the active laye |
| 6670204 |
Semiconductor light emitting device and method for manufacturing the same |
December 30, 2003 |
| A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part |
| 6469320 |
Semiconductor light emitting device |
October 22, 2002 |
| A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part |
| 6258619 |
Fabrication of semiconductor light emitting device |
July 10, 2001 |
| A semiconductor light emitting device includes a substrate, an n-type layer formed of gallium-nitride based compound semiconductor formed on the substrate, and a p-type layer formed of gallium-nitride based compound semiconductor formed on the substrate. Semiconductor overlying layers ar |
| 6197609 |
Method for manufacturing semiconductor light emitting device |
March 6, 2001 |
| Semiconductor layers forming a light emitting layer and including an n-type layer and p-type layer are formed onto a substrate, then the n-type layer is exposed by removing a part of the laminated semiconductor layers. p-side electrode and n-side electrode are then respectively formed on |
| 6194241 |
Semiconductor light emitting device and method of manufacturing the same |
February 27, 2001 |
| A semiconductor layered portion is formed of a gallium-nitride semiconductor overlying a substrate and having an n-type layer and a p-type layer to form a light emitting layer having a pn junction or a doublehetero junction. A gradient layer is provided at an interfacial portion betw |
| 6191437 |
Semiconductor light emitting device and method of manufacturing the same |
February 20, 2001 |
| An n-type layer (3) and a p-type layer (5) which are made of a gallium nitride based compound semiconductor are provided on a substrate (1) so that a light emitting layer forming portion (10) for forming a light emitting layer is provided. A gallium nitride based compound semiconductor |
| 6168962 |
Method of manufacturing a semiconductor light emitting device |
January 2, 2001 |
| Disclosed is a method of manufacturing a semiconductor light emitting device. Semiconductor overlying layers are formed on a substrate in a state of a wafer so that a light emitting area is provided therein. The semiconductor overlying layers includes first and second conductivity type |
| 6167519 |
Secret information protection system |
December 26, 2000 |
| A secret information protection system in an information processing system according to the present invention enables prevention of access to secret information by an unauthorized person, and includes; a storage unit for storing secret information to be protected from an unauthorized per |
| 6156584 |
Method of manufacturing a semiconductor light emitting device |
December 5, 2000 |
| Deposited on a wafer-like substrate for forming a plurality of light emitting device chips is a semiconductor layer laminate with a different property from that of the substrate. Then, electrodes are provided on and in electric connection with a top semiconductor layer of a first con |
| 6107644 |
Semiconductor light emitting device |
August 22, 2000 |
| A semiconductor light emitting device has semiconductor layers including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on a substrate. A first electrode is formed in electrical connection with the first conductivity type semicondu |
| 6054716 |
Semiconductor light emitting device having a protecting device |
April 25, 2000 |
| A semiconductor light emitting device incorporates therein with (a) a light emitting portion formed by semiconductor overlying layers including a first conductivity layer and a second conductivity layer in order to a light emitting layer, and (b) a protecting element portion provided in |
| 5939735 |
Semiconductor light emitting device |
August 17, 1999 |
| A semiconductor light emitting device includes a substrate and semiconductor overlying layers formed on the substrate. A light emitting layer is formed in the semiconductor layer so as to emit light. The substrate is transmittable of the light emitted by the light emitting layer. A l |
| 5572696 |
Secret information protection system erasing secret information upon detection of authorized use |
November 5, 1996 |
| A secret information protection system for protecting secret information stored in an information processing system from access by an unauthorized user after an authorized user terminates the authorized user's use of the information processing system. The secret information protection sy |
| 5404520 |
Data input/output control system |
April 4, 1995 |
| A batch type data input and output control system executes a file output program which outputs data to a file stored in an external storage unit from a main storage apparatus, and a file input program for processing the data in the file. An input/output parallel management means for mana |
| 5377309 |
Software work tool |
December 27, 1994 |
| A software work tool used in an information processor and realizing a general purpose software work tool capable of automatically performing a software operation based on the information regarding a program. The software work tool comprises a software operator for operating a program |
| 5366849 |
Photoresist pattern formation through etching where the imaging exposure changes in a given dire |
November 22, 1994 |
| The fine pattern processing method comprises an exposure step for forming a resist pattern having a predetermined opening on a substrate, a vapor deposition step for forming a vapor deposited film on a portion of the substrate which is exposed at the opening by performing an inclined vap |
