| Patent Number |
Title Of Patent |
Date Issued |
| 7408760 |
Charged particle beam application system |
August 5, 2008 |
| During the writing operation, the wafer potential is dynamically detected and corrected. By doing so, the positional accuracy of the circuit patterns written on a wafer can be improved. After a contact resistance between a wafer and a earth pin is measured, the current flowing from the |
| 7378668 |
Method and apparatus for applying charged particle beam |
May 27, 2008 |
| In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face |
| 7341393 |
Mechanism for sealing |
March 11, 2008 |
| A mechanism for connecting first and second members through a sealing member sandwiched therebetween includes a position adjustment portion which adjusts a position of the first member in a direction substantially perpendicular to a surface of the second member with respect to the se |
| 6730916 |
Electron beam lithography apparatus |
May 4, 2004 |
| An electron beam lithography apparatus of the present invention prevents the electron beam trajectory from being affected by a leakage magnetic field from a permanent magnet which is used as a sample stage guide/driving mechanism. In this electron beam lithography apparatus, an air b |
| 6583431 |
Charged particle beam lithography apparatus for forming pattern on semi-conductor |
June 24, 2003 |
| In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the e |
| 6555833 |
Charged particle beam lithography apparatus for forming pattern on semi-conductor |
April 29, 2003 |
| In order to provide a high-speed and high accuracy cell projection exposure apparatus which greatly increases a pattern projection speed, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron |
| 6511048 |
Electron beam lithography apparatus and pattern forming method |
January 28, 2003 |
| An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower apertur |
| 6509572 |
Charged particle beam lithography apparatus for forming pattern on semi-conductor |
January 21, 2003 |
| In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the e |
| 6441383 |
Charged particle beam lithography apparatus for forming pattern on semi-conductor |
August 27, 2002 |
| In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the e |
| 6329665 |
Charged particle beam lithography apparatus for forming pattern on semi-conductor |
December 11, 2001 |
| In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the e |
| 6320198 |
Charged particle beam lithography apparatus for forming pattern on semi-conductor |
November 20, 2001 |
| In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the e |
| 6262428 |
Charged particle beam lithography apparatus for forming pattern on semi-conductor |
July 17, 2001 |
| In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the e |
| 6121625 |
Charged particle beam lithography apparatus for forming pattern on semi-conductor |
September 19, 2000 |
| In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the e |
| 5831273 |
Charged particle beam lithography method and apparatus thereof |
November 3, 1998 |
| A method of adjusting a shaped beam in a charged particle beam writing method of writing a pattern on the surface of a written target using the above shaped beam is disclosed. The above method of adjusting the above shaped beam consists of a process for measuring the point of the center |
| 5759423 |
Electron beam writing method and apparatus for carrying out the same |
June 2, 1998 |
| An electron beam writing apparatus comprises: an electron beam source for projecting an electron beam; a first mask provided with a first rectangular aperture for passing the electron beam projected by the electron beam source to shape the electron beam in a primary shaped beam havin |
| 5650631 |
Electron beam writing system |
July 22, 1997 |
| A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure |
| 5396077 |
Electron beam lithography apparatus having electron optics correction system |
March 7, 1995 |
| An electron beam apparatus used in a cell projection method has a system for correcting the electron optics. A figured electron beam that has been passed through a cell having a complex figure shape is directed onto a stage on which a substrate is positioned. A fine hole is formed in the |
