| Patent Number |
Title Of Patent |
Date Issued |
| 6777780 |
Trench bipolar transistor |
August 17, 2004 |
| The invention relates to a trench bipolar transistor structure, having a base 7, emitter 9 and collector 4, the latter being divided into a higher doped region 3 and a lower doped drift region 5. An insulated gate 11 is provided to deplete the drift region 5 when the transistor is switch |
| 6774434 |
Field effect device having a drift region and field shaping region used as capacitor dielectric |
August 10, 2004 |
| A field effect transistor semiconductor device (1) comprises a source region (33), a drain region (14) and a drain drift region (11), the device having a field shaping region (20) adjacent the drift region (11) and arranged such that, in use, when a voltage is applied between the source |
| 6436785 |
Method of manufacturing semiconductor device with a tunnel diode |
August 20, 2002 |
| A semiconductor device with a tunnel diode comprises two mutually adjoining semiconductor regions (2, 3) of opposed conductivity types having high enough doping concentrations to provide a tunneling junction. Portions (2A, 3A) of the semiconductor regions adjoining the junction comprise |
| 6242762 |
Semiconductor device with a tunnel diode and method of manufacturing same |
June 5, 2001 |
| A semiconductor device with a tunnel diode (23) is particularly suitable for various applications. Such a device comprises two mutually adjoining semiconductor regions (2, 3) of opposed conductivity types and having doping concentrations which are so high that breakdown between them lead |
| 5760450 |
Semiconductor resistor using back-to-back zener diodes |
June 2, 1998 |
| Very high resistance values may be necessary in integrated circuits, for example in the gigaohm range, for example for realizing RC times of 1 ms to 1 s. Such resistance values cannot or substantially not be realized by known methods in standard i.c. processes because of the too large sp |
| 5502326 |
Semiconductor device provided having a programmable element with a high-conductivity buried cont |
March 26, 1996 |
| A semiconductor device includes a programmable element having a doped semiconductor region (4) and a conductor region (6) which are separated from one another by at least a portion of an insulating layer (5). The conductor region (6) is of a material suitable for forming a rectifying |
| 5471419 |
Semiconductor device having a programmable memory cell |
November 28, 1995 |
| A semiconductor device having a programmable memory cell which includes a bipolar transistor of which a base region (13) can be provided with a base current through a control transistor (7, 8, 9, 10). The bipolar transistor has an emitter region (12) connected to a first supply line (151 |
| 5416343 |
Semiconductor device provided with a number of programmable elements |
May 16, 1995 |
| A semiconductor device includes a number of programmable elements arranged in a matrix of rows and columns. The elements each have a doped semiconductor region (10) and a conductor region (20) which are mutually separated by an insulating layer (8). The conductor region (20) can be a |
| 5412705 |
X-ray examination apparatus with an imaging arrangement having a plurality of image sensors |
May 2, 1995 |
| An x-ray examination apparatus includes an imaging arrangement, devised for performing fluoroscopy. Which has image sensors that are efficiently optically coupled with an x-ray sensitive radiation conversion screen. Consequently, the image sensors produce an electrical signal having a hi |
| 4998153 |
Charge-coupled device |
March 5, 1991 |
| A first charge storage electrode (21) has a first row (21b) of teeth interdigitated with a second row (22b) of teeth of a second charge storage electrode (22). The second storage electrode (22) has a third row (22c) of teeth interdigitated with a fourth row (23b) of teeth of a third char |
| 4907049 |
Charge-coupled semiconductor device having an improved electrode structure |
March 6, 1990 |
| A charge-coupled semiconductor device has a plurality of silicon electrodes for storing and transporting information-carrying charge, which electrodes are located on an insulating layer and are mutually separated by grooves having a width of at most 1 .mu.m. According to the invention, t |
| 4766332 |
Detecting binary information from a charge transfer device |
August 23, 1988 |
| A method of detecting binary information from the pulse-shaped output signal of a CCD uses a varying reference voltage which depends on the amplitude of the last pulse detected, in order to render the detection system immune to pulse distortion as a result of transfer losses in the C |
| 4669100 |
Charge-coupled device having a buffer electrode |
May 26, 1987 |
| A series-parallel-series memory or other parallel-to-series CCD has charge-signals interlaced in alternate parallel channels 1a and 1b, and de-interlacing electrodes (19, 20, 21, 22) at the parallel-to-series transition. In order to avoid delay effects as a result of comb-shaped elec |
| 4636826 |
Charge coupled devices having narrow coplanar silicon electrodes |
January 13, 1987 |
| In a semiconductor device, for example a SPS memory having narrow coplanar silicon electrodes, the electrodes are formed by etching grooves or slots having a width in the submicron range into a polycrystalline silicon layer with the slot width being defined by the oxidized edge of a sili |
| 4627083 |
Charge transfer device output |
December 2, 1986 |
| The invention relates to a charge-coupled device, in which the reset transistor of the output is clocked--with a positive threshold voltage--by a maximum voltage equal to the supply voltage V.sub.DD. The drain (14) of the reset transistor is adjusted by means of an auxiliary transistor |
| 4627082 |
Semiconductor device for obtaining an accurate threshold voltage adjustment |
December 2, 1986 |
| The invention relates to an integrated MOS circuit comprising a MOS transistor which is connected as a resistor and which, when conducting current, generates a voltage which is supplied to the source/gate of a second field effect device. In order to obtain a suitable current adjustme |
| 4619039 |
Method of manufacturing a semiconductor device and device manufactured by the use of the method |
October 28, 1986 |
| A method of manufacturing a semiconductor device having narrow, coplanar, silicon electrodes which are separated from each other by grooves or slots having a width in the submicron range. The electrodes are alternatively covered by an oxide and by an oxidation-preventing layer, such as s |
| 4599710 |
Integrated memory circuit of a series-parallel-series type |
July 8, 1986 |
| In a series-parallel-series memory circuit (3) which requires a write clock signal (at 19), a transfer clock signal (at 25) and a read clock signal (at 31), it is sufficient, because a clock signal processing circuit (23) is provided, to apply only two clock signals (to 33 and 35). Using |
| 4574468 |
Method of manufacturing a semiconductor device having narrow coplanar silicon electrodes |
March 11, 1986 |
| A method of manufacturing a semiconductor device, for example an SPS memory having narrow coplanar silicon electrodes. The electrodes are formed by etching grooves or slots (10) having a width in the submicron range into a polycrystalline silicon layer (3), the slot width being defined b |
| 4563752 |
Series/parallel/series shift register memory comprising redundant parallel-connected storage reg |
January 7, 1986 |
| A series/parallel/series shift register memory comprises a substrate on which there are provided storage positions for multivalent data elements. There is provided a redundancy generator for generating one or more redundant code elements on the basis of a group of data elements, said |
| 4504930 |
Charge-coupled device |
March 12, 1985 |
| The invention relates to a charge-coupled SPS memory comprising a series input register, a parallel section and a series output register. In order to increase the retention time leakage current drain regions are provided beside the memory. Since the charge collected as a result of leakag |
| 4151006 |
Method of manufacturing a semiconductor device |
April 24, 1979 |
| A method of manufacturing a semiconductor device having a transistor structure in which the emitter zone comprises a lower-doped region adjoining the base zone and a more highly-doped region adjoining the surface. According to the invention, the more highly-doped part is obtained by |
