A capacitor of a semiconductor device includes a cylinder type capacitor lower electrode, a dielectric layer, and an upper electrode. The upper electrode includes a metallic layer on the dielectric layer and a doped polySi.sub.1-xGe.sub.x layer stacked on the metallic layer. Methods of
In a method of forming an oxide layer, ozone is generated by reacting an oxygen gas having a first flow rate with a nitrogen gas having a second flow rate of more than about 1% of the first flow rate. A reactant including the ozone and nitrogen is provided onto a silicon substrate. A
