| Patent Number |
Title Of Patent |
Date Issued |
| 7426096 |
Magnetoresistive effective element with high output stability and reduced read bleeding at track |
September 16, 2008 |
| A first shielding layer and a second shielding layer are disposed by a given distance. An MR film is disposed in between the first shielding layer and the second shielding layer. The first gap film is formed on the MR film with commensurate to the surface configuration thereof. Magnetic |
| 7403358 |
Thin film magnetic head, magnetic head device, magnetic recording/reproducing device and method |
July 22, 2008 |
| A magnetoresistive effective film responds commensurate with an external magnetic field. Magnetic domain-controlling films apply a perpendicular biasing magnetic field to the magnetoresistive effective film. The forefronts of first electrode films constituting a pair of electrode fil |
| 7333303 |
Magnetoresistive device supplying sense current thereto dependent upon a relationship existent b |
February 19, 2008 |
| Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including a fixing layer mad |
| 7259940 |
Thin-film magnetic head, head gimbal assembly, and hard disk drive |
August 21, 2007 |
| A pair of domain control layers are disposed on both sides of the track width direction of the MR film so as to be separated from each other such that the MR film is held therebetween, and apply a longitudinal magnetic field to the MR film (free layer). The MR film is flanked by the doma |
| 7221546 |
Thin film magnetic head, head gimbal assembly, and hard disk drive |
May 22, 2007 |
| A longitudinal bias magnetic field control layer applies a counter bias magnetic field to a soft magnetic layer that is antiparallel (in opposite direction) to a longitudinal bias magnetic field. A magnitude of the counter bias magnetic field applied to the soft magnetic layer by the |
| 7193822 |
Thin film magnetic head, head gimbal assembly, and hard disk drive |
March 20, 2007 |
| At both end portions of at least a soft magnetic layer of a magneto-resistive effect film, a pair of bias magnetic field applying layers are disposed for applying a longitudinal bias magnetic field to the soft magnetic layer via magnetic underlayers. Further, mutual lattice point-to- |
| 7136263 |
Thin-film magnetic head, thin-film magnetic head assembly, storage device, and method of manufac |
November 14, 2006 |
| A thin-film magnetic head comprises a magnetoresistive film, a pair of magnetic domain control layers for applying a bias magnetic field to the magnetoresistive film, a pair of electrode layers for supplying a current to the magnetoresistive film, first and second shield layers for s |
| 7082673 |
Method of manufacturing magnetoresistive device capable of preventing a sense current from flowi |
August 1, 2006 |
| A magnetoresisive device comprises: an MR element having two surfaces that face toward opposite directions and two side portions that face toward opposite directions; two bias field applying layers that are located adjacent to the side portions of the MR element and apply a longitudinal |
| 7035057 |
Magnetoresistive effect thin-film magnetic head and manufacturing method of magnetoresistive eff |
April 25, 2006 |
| An MR thin-film magnetic head includes a lower shield layer, a lower gap layer made of a nonmagnetic electrically conductive material and laminated on the lower shield layer, an MR multilayer in which a current flows in a direction perpendicular to surfaces of layers of the magnetore |
| 7029770 |
Exchange-coupled film, spin valve film, thin film magnetic head, magnetic head apparatus, and ma |
April 18, 2006 |
| An exchange-coupled film has a ferromagnetic layer sandwich comprising a first ferromagnetic layer containing a ferromagnetic material of the body-centered cubic structure and a pair of second ferromagnetic layers containing a ferromagnetic material of the face-centered cubic structure |
| 6982855 |
Magnetoresistive head having layer structure between free and lead layers with layer structure i |
January 3, 2006 |
| An MR element includes a free layer. Hard magnetic layers are placed on both sides of the MR element and apply a bias magnetic field to the free layer. A pair of electrode layers are placed as spaced from each other, and supplies a sense current to the free layer. Layer structures are |
| 6943998 |
Tunnel magnetoresistive effective element, and a thin film magnetic head, a magnetic head device |
September 13, 2005 |
| A tunnel magnetoresistive effective element has a ferromagnetic tunnel effective film with a free layer, a pinned layer and a tunnel barrier layer sandwiched between the free layer and the pinned layer, a magnetic bias means, a first conductive layer, and a second conductive layer. The |
| 6895658 |
Methods of manufacturing a tunnel magnetoresistive element, thin-film magnetic head and memory e |
May 24, 2005 |
| A TMR element includes: a free layer formed on a lower gap layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer. The pinned layer and the tunnel barrier layer have sidewalls formed through etching. The TMR element further comprises |
| 6888702 |
Thin film magnetic head device |
May 3, 2005 |
| In a thin film magnetic head device including a reading giant magneto-resistive thin film magnetic head element whose electric equivalent circuit is expressed by a series circuit of an equivalent voltage source and a series resistor R.sub.H and a parallel capacitor C connected in par |
| 6870713 |
Magnetoresistive effect thin-film magnetic head |
March 22, 2005 |
| An MR thin-film magnetic head includes a lower shield layer, an upper shield layer, a MR multilayer sandwiched between the lower shield layer and the upper shield layer, the MR multilayer being electrically connected with the lower shield layer and the upper shield layer, a current flowi |
| 6792670 |
Method of manufacturing a magnetoresistive element substructure |
September 21, 2004 |
| A method is provided for manufacturing a magnetoresistive device substructure. The substructure includes: a TMR element; a bias field inducing layer that covers the TMR element; and a front flux probe layer formed on the bias field inducing layer and introducing a signal flux to the |
| 6769170 |
Method for stabilizing properties of a ferromagnetic tunnel junction element |
August 3, 2004 |
| A method of manufacturing a ferromagnetic tunnel junction element, having an insulating film, a first ferromagnetic film and a second ferromagnetic film, including a step of turning the ferromagnetic tunnel junction element on electricity for a given period before a practical operation o |
| 6738234 |
Thin film magnetic head and magnetic transducer |
May 18, 2004 |
| An object of the invention is to provide a thin film magnetic head and a magnetic transducer, which can obtain resistance properties adaptable to ultra-high-density recording. The thin film magnetic head has a stack including a plurality of magnetic layers stacked alternately with a |
| 6728079 |
Magnetoresistive effect thin-film magnetic head |
April 27, 2004 |
| An MR thin-film magnetic head includes a lower shield layer, an MR multilayer laminated on the lower shield layer, in the MR multilayer, a current flowing in a direction perpendicular to surfaces of layers of the MR multilayer, an upper gap layer made of a nonmagnetic electrically co |
| 6671141 |
Tunnel magnetoresistive effective element, a thin film magnetic head, a magnetic head device and |
December 30, 2003 |
| A ferromagnetic tunnel effective film has a free layer, and a pinned layer and a tunnel barrier layer sandwiched between the free layer and the pinned layer. A bias magnetic field-inductive layer applies a given magnetic field to the free layer, and has its larger width than that of |
| 6657826 |
Magnetoresistive device and method of manufacturing same, thin-film magnetic head and method of |
December 2, 2003 |
| A magnetoresisive device comprises: an MR element having two surfaces that face toward opposite directions and two side portions that face toward opposite directions; two bias field applying layers that are located adjacent to the side portions of the MR element and apply a longitudinal |
| 6643104 |
Magnetoresistive effect thin-film magnetic head |
November 4, 2003 |
| An MR thin-film magnetic head includes a lower shield layer, an upper shield layer, a MR multilayer sandwiched between the lower shield layer and the upper shield layer, the MR multilayer being electrically connected with the lower shield layer and the upper shield layer, a current flowi |
| 6603642 |
MAGNETIC TRANSDUCER HAVING A PLURALITY OF MAGNETIC LAYERS STACKED ALTERNATELY WITH A PLURALITY O |
August 5, 2003 |
| An object of the invention is to provide a magnetic transducer and a thin film magnetic head using the same, which can be manufactured by a simple manufacturing process and can obtain good output. The thin film magnetic head has a stack including a plurality of magnetic layers stacked |
| 6591481 |
Method of manufacturing magnetoresistive device and method of manufacturing thin-film magnetic h |
July 15, 2003 |
| A magnetoresistive device comprises a magnetoresistive element, two bias field applying layers that apply a longitudinal bias magnetic field to the magnetoresistive element, and two electrode layers that are located adjacent to one of the surfaces of each of the bias field applying layer |
| 6583967 |
Thin-film magnetic head and method of manufacturing same |
June 24, 2003 |
| A thin-film magnetic head includes: a TMR element; a lower electrode layer and an upper electrode layer for feeding a current used for signal detection to the TMR element; and an insulating layer provided between the lower and upper electrode layers and located adjacent to a side of the |
| 6562199 |
Manufacturing method of magnetoresistive element and film forming apparatus |
May 13, 2003 |
| There is disclosed a manufacturing method of a magnetoresistive element of the present invention, comprising: a step of preparing a substrate having a thermal conductivity in a range of 5 to 150 Wm.sup.-1 K.sup.-1 ; a substrate cooling step of moving the substrate into a vacuum cooling |
| 6529353 |
Magnetoresistive tunnel junction element with bias magnetic field applying layer |
March 4, 2003 |
| There is disclosed a magnetoresistive tunnel junction element comprising a tunnel multilayered film in which a tunnel barrier layer, and a ferromagnetic free layer and a ferromagnetic pinned layer formed to sandwich the tunnel barrier layer therebetween are laminated, wherein a pinni |
| 6483675 |
Tunnel magnetoresistance effect element |
November 19, 2002 |
| In a tunnel magnetoresistance effect element comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned l |
| 6482657 |
Methods of manufacturing tunnel magnetoresistive element, thin-film magnetic head and memory ele |
November 19, 2002 |
| A TMR element includes: a free layer formed on a lower gap layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer. In the step of forming the tunnel barrier layer on the free layer, an Al layer used for making the tunnel barrier laye |
| 6478884 |
Method for manufacturing thin-film magnetic head with spin valve magnetoresistive sensor |
November 12, 2002 |
| A manufacturing method of a thin-film magnetic head with a spin valve effect MR read sensor includes a temperature-annealing step of firmly fixing the direction of the pinned magnetization in the spin valve effect MR sensor. The temperature-annealing step is executed by a plurality of |
| 6473257 |
Method and apparatus for measuring characteristics of ferromagnetic tunnel magnetoresistance eff |
October 29, 2002 |
| The present invention relates to a method for measuring characteristics of a tunnel magnetoresistance effect element having a tunnel multilayered film comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetwe |
| 6469879 |
Magneto-resistive tunnel junction head with biasing elements abutting free layer extended portio |
October 22, 2002 |
| Magneto-resistive tunnel junction head having a tunnel multilayered film with a tunnel barrier layer, a ferromagnetic free layer, and a ferromagnetic pinned layer formed as a sandwich. A magnetic field is applied to the free layer in a longitudinal direction by biasing elements at op |
| 6452385 |
Magnetoresistive effect sensor with double-layered film protection layer |
September 17, 2002 |
| A manufacturing method of a MR sensor includes forming a MR multi-layered structure of a first anti-ferromagnetic material layer, a first ferromagnetic material layer (pinned layer) which receives bias magnetic field caused by exchange coupling with the first anti-ferromagnetic mater |
| 6451215 |
Method of producing magneto-resistive tunnel junction head |
September 17, 2002 |
| The present invention relates to a method of producing a magneto-resistive tunnel junction head comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromag |
| 6413325 |
Method for manufacturing thin-film magnetic head |
July 2, 2002 |
| A method of manufacturing a thin-film magnetic head with a SVMR element which includes first and second layers of a ferromagnetic material (free and pinned layers) separated by a layer of non-magnetic electrically conductive material, and a layer of anti-ferromagnetic material formed in |
| 6406556 |
Method for manufacturing thin-film magnetic head with magnetoresistive effect multi-layered stru |
June 18, 2002 |
| A manufacturing method of a thin-film magnetic head with a MR multi-layered structure using exchange coupling magnetic bias, has a step of forming the MR multi-layered structure, and a step of providing the exchange coupling magnetic bias to the MR multi-layered structure by a temperatur |
| 6400535 |
Magnetoresistive effect multi-layered structure and thin-film magnetic head with the magnetoresi |
June 4, 2002 |
| A MR multi-layered structure or a thin-film magnetic head with the MR multi-layered structure includes a non-magnetic electrically conductive material layer, first and second ferromagnetic material layer separated by the non-magnetic electrically conductive material layer, and an ant |
| 6381107 |
Magneto-resistive tunnel junction head having a shield lead rear flux guide |
April 30, 2002 |
| In the present invention, a common lead and shield layer is used so as to be electrically contacted with a tunnel multilayered film for supplying a sense current to the tunnel multilayered film. The common lead and shield layer extends to a rear portion of the tunnel multilayered film fr |
| 6344954 |
Magneto-resistive tunnel junction head with specific flux guide structure |
February 5, 2002 |
| The present invention relates to a magneto-resistive tunnel junction head having a tunnel multilayered film composed of a tunnel barrier layer, and a ferromagnetic free layer and a ferromagnetic pinned layer formed to sandwich the tunnel barrier layer therebetween, wherein the ferromagne |
| 6335081 |
Tunnel magnetoresistance effect element |
January 1, 2002 |
| In a tunnel magnetoresistance effect element comprising a tunnel multilayered film on an under layer, the tunnel multilayered film has a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagne |
| 6302970 |
Method for manufacturing thin-film magnetic head with spin valve magnetoresistive sensor |
October 16, 2001 |
| A manufacturing method of a thin-film magnetic head with a spin valve effect MR read sensor includes a temperature-annealing step of firmly fixing the direction of the pinned magnetization in the spin valve effect MR sensor. The temperature-annealing step is executed by a plurality of |
| 6294911 |
Measurement method of magnetization direction of magnetoresistive effect devices and measurement |
September 25, 2001 |
| A method of measuring magnetization direction of a MR device, includes a first step of obtaining both maximum electrical resistance values under positive and negative applied measurement magnetic fields onto the MR device biased by anti-ferromagnetic material, a second step of relatively |
| 6255814 |
Method and apparatus for measuring bias magnetic field for controlling magnetic domain of magnet |
July 3, 2001 |
| A method for measuring bias magnetic field for controlling magnetic domain (longitudinal bias magnetic field) of a MR element has the step of applying an external measurement magnetic field onto the MR element which is biased with the magnetic field for controlling the magnetic domain |
| 6233127 |
Thin film device provided with means for electrostatic breakdown prevention |
May 15, 2001 |
| The present invention is directed to a thin film device in which a function of electrostatic breakdown prevention can be enabled or disabled with ease and at which a member for electrostatic breakdown prevention can be externally provided with ease. The thin film device includes a thin f |
| 6219274 |
Ferromagnetic tunnel magnetoresistance effect element and method of producing the same |
April 17, 2001 |
| The present invention relates to a ferromagnetic tunnel magnetoresistance effect element having a multilayered structure comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween, wherein the tunnel barrier lay |
