| Patent Number |
Title Of Patent |
Date Issued |
| 7368416 |
Methods of removing metal-containing materials |
May 6, 2008 |
| Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with |
| 7329576 |
Double-sided container capacitors using a sacrificial layer |
February 12, 2008 |
| Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides of the structural |
| 7312120 |
Method for obtaining extreme selectivity of metal nitrides and metal oxides |
December 25, 2007 |
| Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H.sub.2F.sub.2. The etchant can be used to selectively remove metal nitride layers relative to dop |
| 7276455 |
Methods of etching an aluminum oxide comprising substrate, and methods of forming a capacitor |
October 2, 2007 |
| This invention methods of etching an aluminum oxide comprising substrate, and methods of forming capacitors. In one implementation, a method of etching an aluminum oxide comprising substrate includes flowing water and ozone to aluminum oxide on the substrate, with at least one of the wat |
| 7244682 |
Methods of removing metal-containing materials |
July 17, 2007 |
| Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with |
| 7122422 |
Methods of forming capacitors |
October 17, 2006 |
| This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a nitrogen comprising atmosphere effective to form a dielectric silicon and nitrogen com |
| 7115527 |
Methods of etching an aluminum oxide comprising substrate, and methods of forming a capacitor |
October 3, 2006 |
| This invention methods of etching an aluminum oxide comprising substrate, and methods of forming capacitors. In one implementation, a method of etching an aluminum oxide comprising substrate includes flowing water and ozone to aluminum oxide on the substrate, with at least one of the wat |
| 7091085 |
Reduced cell-to-cell shorting for memory arrays |
August 15, 2006 |
| Bottom electrodes of memory cell capacitors are recessed to prevent electrical shorts between neighboring memory cells. A partially fabricated memory cell capacitor has a bottom electrode comprising titanium nitride (TiN) and hemispherical grained (HSG) silicon. The container housing |
