| Patent Number |
Title Of Patent |
Date Issued |
| 7421001 |
External cavity optoelectronic device |
September 2, 2008 |
| A device contains at least one leaky waveguide layer, and has a transparent substrate, having a higher refractive index. The leakage loss of the waveguide exceeds the modal gain needed to initiate waveguide lasing. The leaky emission is going into the substrate at a certain angle, is |
| 7369583 |
Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data tr |
May 6, 2008 |
| A device contains at least one wavelength-tunable element controlled by an applied voltage and at least two resonant cavities, where the resonant wavelength of the tunable element is preferably elecrooptically tuned using the quantum confined Stark effect around the resonant wavelength o |
| 7339965 |
Optoelectronic device based on an antiwaveguiding cavity |
March 4, 2008 |
| A semiconductor optoelectronic device includes at least one cavity and one multilayered interference reflector. The cavity is designed preferably to possess properties of an antiwaveguiding cavity, where no optical modes propagate in the lateral plane. The existing optical modes are the |
| 7101444 |
Defect-free semiconductor templates for epitaxial growth |
September 5, 2006 |
| A semiconductor device includes at least one defect-free epitaxial layer. At least a part of the device is manufactured by a method of fabrication of defect-free epitaxial layers on top of a surface of a first solid state material having a first thermal evaporation rate and a plurality o |
| 7075954 |
Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable laser |
July 11, 2006 |
| A wavelength division multiplexing system based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors is disclosed. The system allows self-adjusting of the resonance wavelength of the wavelength tunable photodetectors to the wavelengths of the laser li |
| 7031360 |
Tilted cavity semiconductor laser (TCSL) and method of making same |
April 18, 2006 |
| A novel class of semiconductor lasers, or "tilted cavity lasers" includes at least one active element with an active region generating an optical gain by injection of a current and mirrors. The active element is placed into a cavity. The cavity is designed such that the optical path of t |
| 6996148 |
Semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of high |
February 7, 2006 |
| A semiconductor laser having a low beam divergence is disclosed. The laser includes at least one waveguide comprising an active layer generating an optical gain by injection of a current, a photonic band gap crystal having the refractive index modulation in the direction perpendicular to |
| 6928099 |
Apparatus for and method of frequency conversion |
August 9, 2005 |
| Apparatus for frequency conversion of light, the apparatus comprises: a light-emitting device for emitting a light having a first frequency, the light-emitting device being an edge-emitting semiconductor light-emitting diode having an extended waveguide selected such that a fundamental |
| 6804280 |
Semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of high |
October 12, 2004 |
| A semiconductor laser having a low beam divergence is disclosed. The laser includes at least one waveguide comprising an active layer generating an optical gain by injection of a current, a photonic band gap crystal having the refractive index modulation in the direction perpendicular to |
| 6784074 |
Defect-free semiconductor templates for epitaxial growth and method of making same |
August 31, 2004 |
| A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-containing solid state material includes the steps of selective deposition of a second material, having a high temperature stability, on defect-free regions of the first solid state materia |
| 6611539 |
Wavelength-tunable vertical cavity surface emitting laser and method of making same |
August 26, 2003 |
| A wavelength tunable semiconductor vertical cavity surface emitting laser which includes at least one active element including an active layer generating an optical gain by injection of a current, and at least one phase control element, and mirrors. The phase control element contains a |
